[C-10-2] Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer

Eisuke Tokumitsu, Gen Fujii, Hiroshi Ishiwara (1.Precision & Intelligence Laboratory, Frontier Collaborative Research Center, Tokyo Institute of Technology)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-10-3] An Improvement in Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory Using a Silicon Nitride Buffer Layer

Hideki Sugiyama, Yuji Adachi, Toshiyuki Nakaiso, Minoru Noda, Masanori Okuyama (1.Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University)

1999 International Conference on Solid State Devices and Materials |PDF Download

[C-10-4] Memory Properties of Ferroelectric SrBi2Ta2O9 on SiO2/Si and on MgO Buffered SiO2/Si Substrates

S-B Xiong, S. Migita, H. Ota, K. Ishii, E. Suzuki, S. Sakai (1.Electrotechnical Laboratory)

1999 International Conference on Solid State Devices and Materials |PDF Download

[LC-1-1] Submicron Ferroelectric Capacitors Fabricated by CMP Process for High-Density FeRAMs

Yasushi Igarashi, Kouichi Tani, Masanori Kasai, Kinya Ashikaga, Toshio Ito (1.Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-9-1] Progress in Quantum Dot Lasers: 1100nm, 1300nm and High Power Application

M. Grundmann, F. Heinrichsdorff, N. N. Ledentsov, C. Ribbat, D. Bimberg, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, Zh. I. Alferov (1.Institut fur Festkorperphysik, Technische Universitat Berlin, 2.A. F. Ioffe-Institut)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-9-2] Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD

J. Tatebayashi, S. Ishida, M. Nishioka, T. Someya, Y. Arakawa (1.Research Center for Advanced Science and Technology, University of Tokyo, 2.Institute of Industrial Science, University of Tokyo)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-9-3] High Photo Conductive Gain with Lateral Transport Quantum Dot Infrared Photo Detector

D. H. Baek, S. S. Ko, J. W. Kim, T. H. Cho, J. E. Oh, S. Hong S. Komarov, J. S. Harris (1.Department of Electrical Engineering, KAIST, 2.Research Center for Electronic Materials & Components, Dept. of EE., Hanyang Univ., 3.Solid State Laboratory, Stanford University)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-9-4] Mid-Infrared Detection and Fano Resonance in Bound-to-Continuum Intersubband Transition in Self-Assembled InAs Quantum Dots

S.-W. Lee, Ph. Lelong, K. Hirakawa, Y. Shimada, H. Sakaki (1.Institute of Industrial Science, University of Tokyo, 2.CREST, Japan Science and Technology Corporation)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-10-1] Electron-electron Interaction and Changing Effects in Semiconductor Quantum Dots

Jean-Pierre Leburton (1.Department of Electrical and Computer Engineering and Beckman Institute University of Illinois at Urbana-Champaign)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-10-2] Cyclotron Resonance of Two-Dimensional Holes in Strained MQW Ge/GeSi Heterostructures in Quantizing Magnetic Fields

V. Ya. Aleshkin, V. I. Gavrilenko, I. V. Erofeeva, O. A. Kuznetsov, M. D. Moldavskaya, V. L. Vaks, D. B. Veksler (1.Institute for Physics of Microstructures of Russian Academy of Sciences)

1999 International Conference on Solid State Devices and Materials |PDF Download