[D-13-2] Temperature Dependence of Si Delta-Doping on GaAs Singular and Vicinal Surfaces in Metalorganic Vapor Phase Epitaxy

Chiharu Tazaki, Masashi Akabori, Junichi Motohisa, Takashi Fukui (1.Research Center for Interface Quantum Electronics, Hokkaido University)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-13-3] n-GaAs Back-Gated Double-Quantum-Well Structures with Full Density Control

K. Muraki, N. Kumada, T. Saku, Y. Hirayama (1.NTT Basic Research Laboratories, 2.Department of Physics, Tohoku University)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-14-1] Coupled Electron and Hole Gases in the InAs/AlSb/GaSb System

J. H. Roslund, K. Saito, K. Suzuki, H. Yamaguchi, Y. Hirayama (1.NTT Basic Research Laboratories, 2.CREST)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-14-2] Current Hysteresis in a Delta Doped GaAs Metal-Semiconductor Field Effect Transistor

F. Sabri, K. Tsukagoshi, D. G. Hasko (1.Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, 2.Hitachi Cambridge Laboratory)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-14-3] (AlGa)As Composition Profile Analysis of Trenches Overgrown with MOVPE

Lars Hofmann, Dirk Rudloff, Ingrid Rechenberg, Jurgen Christen (1.Ferdinand-Braun-Institut fur Hochstfrequenztechnik, 2.Otto-von-Guericke-Universitat Magdeburg)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-15-1] Low-Temperature-Grown GaAs-In Situ Characterization and Application

J. Herfort, G. Apostolopoulos, W. Ulrici, K.-J. Friedland, H. Kostial, L. Daweritz, M. Leitner, P. Glas, K. H. Ploog (1.Paul-Drude-Institut fur Festkorperelektronik, 2.Max-Born-Institut fur Kurzzeitspektroskopie und Nichtlineare Optik)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-15-2] Epitaxial Growth of III-V Semiconductors on Ferrite Substrates

H. Fujioka, T. Ikeda, K. Ono, M. Yoshimoto, H. Koinuma, M. Oshima (1.Department of Applied Chemistry, University of Tokyo, 2.Materials and Structures Laboratory, Tokyo Institute of Technology)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-15-3] Determination of the Facet Index in Area Selective Epitaxy of GaAs

Hiroaki Kuriyama, Masahiro Ito, Keita Suzuki, Yoshiji Horikoshi (1.School of Science and Engineering, Waseda University, 2.Kagami Memorial Laboratory, for Materials Science and Technology, Waseda University)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-16-1] Be Redistribution in GaInP and Growth of GaInP/AlInP Tunnel Diode by Gas Source Molecular Beam Epitaxy

Wei Li, Jari Likonen, Jouko Haapamaa, Markus Pessa (1.Optoelectronic Research Center, Tampere university of Technology, 2.Technical Research Center of Finland)

1999 International Conference on Solid State Devices and Materials |PDF Download

[D-16-2] Fine Structures of Fe-Related Energy Levels in GaAsP

Junyong Kang, Huahan Zhan, Qisheng Huang (1.Department of Physics, Xiamen University)

1999 International Conference on Solid State Devices and Materials |PDF Download

297 results (271 - 280)

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