[G-7-5] High-Speed III-V HEMT and HBT Devices and Circuits for ETDM Transmission beyond 80 Gbit/s

Ruediger Quay, Michael Schlechtweg, Arnulf Leuther, Manfred Lang, Ulrich Nowotny, Otmar Kappeler, Willi Benz, Manfred Ludwig, Martin Leich, Rachid Driad, Wolfgang Bronner, Gunter Weimann (1.Fraunhofer Institut fur Angewandte Festkorperphysik)

2003 International Conference on Solid State Devices and Materials |PDF Download

[G-8-1] High-Performance, Low-Cost SiGe:C BiCMOS Technology

B. Tillack, D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rucker, R. Barth, J. Bauer, K. Blum, D. Bolze, J. Borngraber, J. Drews, G. Fischer, A. Fox, F. Fuernhammer, O. Fursenko, T. Grabolla, U. Haak, W. Hoppner, K. Kopke, D. Kruger, B. Kuck, R. Kurps, M. Marschmeyer, H. H. Richter, D. Schmidt, P. Schley, R. Scholz, W. Winkler, D. Wolansky, H.-E. Wulf, Y. Yamamoto, P. Zaumseil (1.IHP)

2003 International Conference on Solid State Devices and Materials |PDF Download

[G-8-2] Base Current Control in Low VBE Operated SiGeC Heterojunction Bipolar Transistors Using SiGe-cap Structure and High Carbon Content Base

Tohru Saitoh, Takahiro Kawashima, Yoshihiko Kanzawa, Junko Sato-Iwanaga, Ken Idota, Takeshi Takagi, Teruhito Ohnishi, Koichiro Yuki, Tsuneichiro Sano, Shigeki Sawada (1.Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd., 2.Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[G-8-3] A Low Power SiGe Micromixer for 2.4/5.2/5.7 GHz Multi-band WLAN Applications

C. Y. Wang, H. W. Chiu, H. C. Chen, S. S. Lu, C. C. Meng (1.Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, 2.Department of Electrical Engineering, National Chiao-Tung University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[G-9-1] GaN-based microwave power devices: A survey on the activities in Europe

Joachim Wurfl (1.Ferdinand-Braun-Institut fur Hochstfrequenztechnik)

2003 International Conference on Solid State Devices and Materials |PDF Download

[G-9-2L] Non-Recessed-Gate Enhancement-Mode AlGaN/GaN HEMTs with High RF Performance

Akira Endoh, Yoshimi Yamashita, Keiji Ikeda, Masataka Higashiwaki, Kohki Hikosaka, Toshiaki Matsui, Satoshi Hiyamizu, Takashi Mimura (1.Fujitsu Laboratories Ltd., 2.Communications Research Laboratory, 3.Graduate School of Engineering Science, Osaka University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[G-9-3] AlGaN/GaN Power HEMTs Using Surface-Charge-Controlled Structure　with Recessed Ohmic Technique

Masahito Kanamura, Toshihide Kikkawa, Nobuo Adachi, Tokuharu Kimura, Shigeru Yokogawa, Masaki Nagahara, Naoki Hara, Kazukiyo Joshin (1.Fujitsu Laboratories Ltd., 2.Fujitsu Quantum Devices Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[G-9-4] AlGaN/GaN/graded-AlGaN Double-Heterostructure HEMTs

Yugang Zhou, Rongming Chu, Kevin J. Chen, Kei May Lau (1.Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology)

2003 International Conference on Solid State Devices and Materials |PDF Download

[G-10-1] Development of AlGaN/GaN power HFET for the application of an inverter circuit

Seikoh Yoshida (1.Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[G-10-2] Si/SiGe Heterojunction Collector for Low Loss Operation of Carrier Stored Trench-Gate Bipolar Transistor

Tsugutomo Kudoh, Tanemasa Asano (1.Center for Microelectronic Systems, Kyushu Institute of Technology)

2003 International Conference on Solid State Devices and Materials |PDF Download