[F-2-7L] Unpinning of the Fermi level at clean (111)A surfaces of heavily Si-doped In0.53Ga0.47As thin films epitaxially grown on InP substrates

Simon Perraud, Kiyoshi Kanisawa, Zhao-Zhong Wang, Yoshiro Hirayama (1.NTT Basic Research Laboratories, NTT Corporation, 2.Laboratoire de Photonique et de Nanostructures, CNRS, 3.SORST-JST)

2005 International Conference on Solid State Devices and Materials |PDF Download

[F-2-8L] Hetero-Epitaxial Growth of GaN onto SiC-on-SIMOX Substrates

T. Yokoyama, T. Egawa, K. Oouchi, M. Nakao, T. Shirahata, S. Kobayashi, K. Izumi (1.Air Water Inc., 2.Nagoya Institute of Technology, 3.Osaka Prefecture University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[F-3-1] Quantum Dots, Quantum Dot Molecules, and Quantum Dot Crystals

O. G. Schmidt, A. Rastelli, S. Kiravittaya, L. Wang, M. Stoffel, G. J. Beirne, C. Hermannstaedter, P. Michler (1.Max-Planck-Institut fur Festkorperforschung, Heisenbergstr., 2.5. Physikalisches Institut, Universitat Stuttgart)

2005 International Conference on Solid State Devices and Materials |PDF Download

[F-3-2] Formation of Germanium-Rich Nanodots by Selective Oxidation of An As-Deposited Thin Hydrogenated Amorphous Silicon-Germanium Layer

S. Y. Lo, P. J. Wu, R. H. Yeh, J. W. Hong (1.Department of Electrical Engineering, National Central University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[F-3-3] Study of InGaN red emission multiple Quantum Dots

Te-Chung Wang, Hao-Chung Kuo, Ching-En Tsai, Min-Ying Tsai, Jung-Tsung Hsu (1.Opto-Electronics and System Laboratories, Industrial Technology Research Institute, 2.Institute of Electro-Optical Engineering, National Chiao Tung University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[F-3-4] Selective Formation of Self-Organized InAs QDs on Patterned GaAs Substrates by Molecular Beam Epitaxy

Akio Ueta, Kouichi Akahane, Sinichiro Gozu, Naokatsu Yamamoto, Naoki Ohtani (1.National Institute of Information and Communications Technology, 2.Doushisya-University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[F-4-1] Creation of Strained and Relaxed SiGe films simultaneously through Ge condensation on SOI

M. Mukherjee-Roy, A. Agarwal, C.H. Tung, R. Kumar, L.K. Bera, N. Balasubramanian, D.L. Kwong (1.Institute of Microelectronics)

2005 International Conference on Solid State Devices and Materials |PDF Download

[F-4-2] A Novel Approach to fabricate High Ge content SiGe on Insulator from Amorphous SiGe deposited on SOI wafers

S. Balakumar, Fei Gao, S. J. Lee, C.H. Tung, R. Kumar, T. Sudhiranjan, Y.L. Foo, N. Balasubramanian, D.L. Kwong (1.Institute of Microelectronics, 2.Silicon Nano Device Lab, Department of ECE, National University of Singapore, 3.Institute of Materials Research Engineering)

2005 International Conference on Solid State Devices and Materials |PDF Download

[F-4-3] Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD

Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake, Yasuji Nakahama, Yusuke Ebata, Kumayasu Yoshii, Yuzo Mori (1.Osaka University, Dept. of Precision Science and Technology, Graduate School of Eng., 2.SHARP Corporation, Production technology development center)

2005 International Conference on Solid State Devices and Materials |PDF Download

[F-4-4] Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si (111) Substrate

T. Sadoh, H. Takeuchi, K. Ueda, A. Kenjo, M. Miyao (1.Department of Electronics, Kyushu University)

2005 International Conference on Solid State Devices and Materials |PDF Download

533 results (191 - 200)

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