[C-5-4] Width Scaling and Layout Variation Effects on Dual Damascene Copper Interconnects Electromigration

M. H. Lin, K. P. Chang, K. C. Su, Tahui Wang (1.United Microelectronics Corp., 2.Department of Electronics Engineering, National Chiao-Tung University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[C-6-1] Comparison between UV and EB cure method for porous PAr / porous MSX hybrid structure

K. Fujita, H. Miyajima, S. Nakao, T. Sakanaka, R. Nakata, H. Yano, T. Yoda (1.Process & Manufacturing Engineering Center, Semiconductor Company Toshiba Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[C-6-2] Via-Profile Controlled, Porous Low-k/ Cu DDIs with High Thermal Stability

H. Ohtake, S. Saito, M. Tagami, M. Tada, M. Abe, N. Furutake, Y. Hayashi (1.System Devices Research Laboratories, NEC Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[C-6-3] Comparative Studies of Pore Seal Films for Porous-Silica/Cu lnterconnect

Y Shishida, S. Chikaki, M. Shimoyama, R. Yagi, T. Yoshino, T. Ono, A. Ishikawa, N. Fujii, T. Nakayama, K. Kohmura, H. Tanaka, J. Kawahara, Y. Sonoda, H. Matsuo, S. Hishiya, T. Yamanishi, K. Kinoshita, T. Kikkawa (1.MIRAI, Association of Super-Advanced Electronics Technologies(ASET), 2.MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, 3.Research Center for Nanodevices and Systems, Hiroshima University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[C-7-1] Material and Electrical Characterization of Nickel Germanide for p-channel Germanium Schottky Source/Drain Transistors

Rinus T.P. Lee, S.L. Liew, B. Balakrisnan, K.Y. Lee, Yee-Chia Yeo, D.Z. Chi (1.Institute of Materials Research and Engineering, 2.Silicon Nano Device Lab, Dept of Electrical and Computer Engineering, National University of Singapore)

2005 International Conference on Solid State Devices and Materials |PDF Download

[C-7-2] Highly Thermal Immune Ni GermanoSilicide with Nitrogen-Doped Ni and Co/TiN Double Capping Layer for Nano-Scale CMOS Applications

Soon-Young Oh, Jang-Gn Yun, Yong-Jin Kim, Won-Jae Lee, Hee-Hwan Ji, Tuya Agchbayar, Ui-Sik Kim, Han-Seob Cha, Sang-Bum Heo, Yoo-Jeong Cho, Kil-Jin Han, Yeong-Cheul Kim, Jin-Suk Wang, Hi-Deok Lee (1.Dept. of Electronics Engineering, Chungnam National University, 2.R&D Center, MagnaChip Semiconductor Ltd., 3.Dept. Of Materials Engineering, Korea University of Technology and Education)

2005 International Conference on Solid State Devices and Materials |PDF Download

[C-7-3] Theoretical Investigation of Neutral Point Defects in CoSi2

Tao Wang, Young-Hwan Son, Han-Soo Joo, Yong-Jin Kim, In-Sik Han, Hi-Deok Lee (1.Dept. of Electronics Engineering, Chungnam National University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[C-7-4L] Low Resistance Ni Thin Film Deposition for Nickel Silicide by Atomic Layer Deposition

K. W. Do, C. M. Yang, I. S. Kang, K. M. Kim, K. H. Back, H. I. Cho, H. B. Lee, J. H. Lee, S. H. Hahm, S. H. Kong, J. H. Lee (1.School of Electrical Engineering and Computer Science, Kyungpook National University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[C-8-1] Current Status and Forecast in High-Performance CMOS Device Technology

Toshihiro Sugii (1.Fujitsu Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[C-8-2] Buried Epitaxial, Si1-yCy (y = 0.07 %) for the Suppression of Leakage in SPER (550℃ 10 mins) Activated Junctions and Current Drive Enhancement in nMOSFET

Chung Foong Tan, Eng Fong Chor, Hyeokjae Lee, Jinping Liu, Elgin Quek, Lap Chan (1.COE, ECE, National University of Singapore, 2.TD, Chartered Semiconductor Manufacturing)

2005 International Conference on Solid State Devices and Materials |PDF Download