The Japan Society of Applied Physics

655件中(111 - 120)

[C-9-2] High Hole-Mobility 65nm Biaxially-Strained Ge-pFETs: Fabrication, Analysis and Optimization

J. Mitard1、B. De Jaeger1、G. Eneman2,3、A. Dobbie4、M. Myronov4、M. Kobayashi5、J. Geypen1、H. Bender1、B. Vincent1、R. Krom2、J. Franco2、G. Winderickx1、E. Vrancken1、W. Vanherle1、W. E. Wang1、J. Tseng6、R. Loo1、K. De Meyer2、M. Caymax1、L. Pantisano1、D. R. Leadley4、M. Meuris1、P. P. Absil1、S. Biesemans1、T. Hoffmann1 (1.IMEC、2.K. U Leuven、3.FWO , Belgium、4.Univ. of Warwick , UK、5.Stanford Univ. , USA、6.TSMC , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

655件中(111 - 120)