The Japan Society of Applied Physics

[C-9-2] High Hole-Mobility 65nm Biaxially-Strained Ge-pFETs: Fabrication, Analysis and Optimization

J. Mitard1、B. De Jaeger1、G. Eneman2,3、A. Dobbie4、M. Myronov4、M. Kobayashi5、J. Geypen1、H. Bender1、B. Vincent1、R. Krom2、J. Franco2、G. Winderickx1、E. Vrancken1、W. Vanherle1、W. E. Wang1、J. Tseng6、R. Loo1、K. De Meyer2、M. Caymax1、L. Pantisano1、D. R. Leadley4、M. Meuris1、P. P. Absil1、S. Biesemans1、T. Hoffmann1 (1.IMEC、2.K. U Leuven、3.FWO , Belgium、4.Univ. of Warwick , UK、5.Stanford Univ. , USA、6.TSMC , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード