[KM-6-2] Tuning of Structural and Electronic properties of Epitaxial Graphene by Substrate Microfabrication

H. Fukidome¹, H. Handa¹, M. Kotsugi^2,3, T. Seyller⁴, Y. Kawai¹, T. Ohkouchi², K. Horn⁵, R. Takahashi¹, K. Imaizumi¹, Y. Enta⁶, M. Suemitsu¹, T. Kinoshita^2,3 (1.Tohoku Univ., 2.JASRI/SPring-8, 3.CREST-JST , Japan, 4.Friedrich-Alexander-Universitat Erlangen-Nurnberg, 5.Fritz-Harber-Institut , Germany, 6.Hirosaki University , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[KM-6-3] Theory on Initial Stage of Epitaxial Graphene Growth on SiC(0001)

H. Kageshima¹, H. Hibino¹, H. Yamaguchi¹, M. Nagase² (1.NTT Basic Res. Labs., 2.Univ. of Tokushima , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[KM-6-4] Formation of Graphene on Diamond C(111) Surfaces by Vacuum Annealing

S. Ogawa¹, T. Yamada², S. Ishidzuka³, A. Yoshigoe⁴, T. Kaga¹, H. Hozumi¹, M. Hasegawa², Y. Teraoka⁴, Y. Takakuwa¹ (1.Tohoku Univ., 2.AIST, 3.Akita Nat. Col. Tech., 4.JAEA , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[KM-6-6] Large Area CVD Graphene Film as Transparent Electrode for Organic Electronics

G. Kalita¹, K. Wakita¹, M. Umeno¹ (1.Chubu Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[KM-7-1] Epitaxial CVD Growth of Graphene and Influence of Domain Structure on Transport Property

H. Ago¹, C. M. Orofeo¹, Y. Ogawa¹, B. Hu¹, Y. Ito¹, K. Kawahara¹, M. Tsuji¹, K. Ikeda¹, S. Mizuno¹, H. Hibino² (1.Kyushu Univ., 2.NTT Basic Res. Labs. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[KM-7-2] Touch Pressure Sensor using Metal/PVDF-TrFE/Graphene Device

E. J. Paek¹, H. J. Hwang¹, S. K. Lee¹, C. G. Kang¹, C. H. Cho¹, Y. G. Lee¹, S. K. Lim¹, B. H. Lee¹ (1.GIST , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[KM-7-3] Valinomycin-Modified Graphene Field-Effect Transistors for Potassium Ion Sensors

Y. Sofue¹, Y. Ohno¹, K. Maehashi¹, K. Inoue¹, K. Matsumoto¹ (1.Osaka Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[KM-7-4] Effect of ionic liquid on transfer characteristic of graphene channel on PZT

J. Suzuki¹, S. Kataoka¹, T. Arie^1,2, S. Akita^1,2 (1.Osaka Prefecture Univ., 2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[L-1-1] High Efficiency Quantum Well Solar Cells

N. Ekins-Daukes¹, K. Barnham¹, A. Chan¹, D. Farrell¹, L. Hirst¹, K. H. Lee¹, M. Fuhrer¹, N. Hylton¹, M. Yoshida¹, J. S .Roberts², R. Airey² (1.Imperial College London., 2.Univ. of Sheffield , UK)

2011 International Conference on Solid State Devices and Materials |PDF Download

[L-1-2] Non-Radiative Carrier Recombination in the Strain-Balanced InGaAs/GaAsP Multiple Quantum Wells for Solar Cell Application

T. Aihara¹, Y. Nakano², A. Fukuyama¹, Y. Wang², M. Sugiyama², T. Ikari¹ (1.Univ. of Miyazaki, 2.Univ. of Tokyo , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download