[P-3-12] Investigation of Short-Channel Effects in Junctionless Nanowire Transistors
2011 International Conference on Solid State Devices and Materials |PDF Download
741 results (511 - 520)
[P-3-13] Stack Gate Technique for Feasible Bulk FinFETs
2011 International Conference on Solid State Devices and Materials |PDF Download
[P-3-14] Strain Effects on Ballistic Currents of Silicon Nanowire pFETs with Different Orientations
2011 International Conference on Solid State Devices and Materials |PDF Download
[P-3-15] Impact of Strain Effect on Zero Temperature Coefficient (ZTC) Point of Bulk pMOSFETs
2011 International Conference on Solid State Devices and Materials |PDF Download
[P-3-16] Evidence of the universality of the hole mobility in accumulation MOS transistors
2011 International Conference on Solid State Devices and Materials |PDF Download
[P-3-17] Simulation of Electron Transport in Source and Drain Electrodes of Ultrathin Body III-V Channel MOSFETs
2011 International Conference on Solid State Devices and Materials |PDF Download
[P-3-18] Evaluation of Drain Current Fluctuations of Si MOSFETs using BSIM3-like Current Model and TCAD
2011 International Conference on Solid State Devices and Materials |PDF Download
[P-3-19] Influence of Surface Roughness on Ge Gate-All-Around Nanowire nMOSFETs by 3D Full Band Monte Carlo Simulation
2011 International Conference on Solid State Devices and Materials |PDF Download
[P-3-20L] Critical Parameters for Accurate Calculation of Si Nanowire MOSFET Current
2011 International Conference on Solid State Devices and Materials |PDF Download
[P-3-21L] Impact of Poly Depletion on Accurate Evaluation of Self-Heating Effects in SOI MOSFETs with Four-point Gate Resistance Measurement Method
2011 International Conference on Solid State Devices and Materials |PDF Download