[E-6-2] Dual Gated Germanium Junctionless p-MOSFETs

D. D. Zhao^1,2,3, C. H. Lee^1,2, T. Nishimura^1,2, K. Nagashio^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.CREST-JST , Japan, 3.Beijing Normal Univ. , China)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-6-3] Control of Surface Roughness on Ge by Wet Chemical Treatments and Its Effects on Electron Mobility in n-FETs

C. H. Lee^1,2, T. Nishimura^1,2, T. Tabata^1,2, M. Yoshida¹, K. Nagashio^1,2, K. Kita^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-6-4] Strain and Dislocation Structures of Ge_1-xSn_x Heteroepitaxial Layers Grown on Ge(110) Substrates

T. Asano¹, Y. Shimura^1,2, O. Nakatsuka¹, S. Zaima¹ (1.Nagoya Univ., 2.JSPS , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-7-1] Strained Ge Layers on SiGe(Sn) Buffer Layers Formed by Solid-phase Mixing Method

T. Yamaha¹, K. Mochizuki¹, Y. Shimura^1,2, O. Nakatsuka¹, S. Zaima¹ (1.Nagoya Univ., 2.JSPS , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-7-2] Evaluation of Anisotropic Strain Relaxation in SSOI Nanostructure by Oil-Immersion Raman Spectroscopy

D. Kosemura¹, M. Tomita¹, K. Usuda², A. Ogura¹ (1.Meiji Univ., 2.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-7-3] Channel strain measurements in 32nm-node CMOSFETs

M. Takei¹, H. Hashiguchi¹, T. Yamaguchi¹, D. Kosemura¹, K. Nagata^1,2, A. Ogura¹ (1.Meiji Univ., 2.JSPS , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-7-4] Characterization of strain and crystallinity in patterned embedded Silicon Germanium structures

S. Mochizuki¹, A. Madan², A. Pofelski³, A. G. Domenicucci², P. L. Flaitz², J. Li², Y. Y. Wang², T. Pinto², C. W. Lai⁴, J. R. Holt², E. C. T. Harley², M. W. Stoker², A. Reznicek², D. Schepis², V. Paruchuri² (1.Renesas Electronics, 2.IBM, 3.STMicroelectronics, 4.GLOBALFOUNDRIES Singapore , USA)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-8-1] Challenges for High-k/III-V CMOS: Interfacial Chemistry, Defects, and Fermi Level Pinning

R. M. Wallace¹ (1.Univ. of Texas , USA)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-8-2] Guiding Principles for Bonding and Passivation at III-V - oxide Interfaces

J. Robertson¹, L. Lin¹ (1.Cambridge Univ. , UK)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-8-3] Effect of sulfur treatment on HfO₂/InGaAs MOS interfaces properties

R. Suzuki¹, S. Lee¹, S. H. Kim¹, T. Hoshii¹, M. Yokoyama¹, N. Taoka¹, T. Yasuda², W. Jevasuwan², T. Maeda², O. Ichikawa³, N. Fukuhara³, M. Hata³, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo, 2.AIST, 3.Sumitomo Chemical Co., Ltd. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

741 results (181 - 190)

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