[P-13-22] Improvement of transfer characteristics for PZT-CNT-FET by ionic liquid

S. Kataoka¹, T. Arie^1,2, S. Akita^1,2 (1.Osaka Prefecture Univ., 2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-13-23] Strain Dependence of the Electronic Conductivity of Carbon Nanotubes and Graphene Sheets

M. Ohnishi¹, K. Suzuki¹, H. Miura¹ (1.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-13-24] Analysis of FET Operation Mechanism in SWNT Networks Using Scanning Gate Microscopy

X. Wei¹, K. Maeda¹, T. Yahagi¹, S. Shimozono¹, M. Matsunaga¹, N. Aoki¹, J. P. Bird², Y. Ochiai¹ (1.Chiba Univ. , Japan, 2.Univ. at Buffalo , USA)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-13-25] Optimized Composite Film of Polypyrrole and Functionalized Multi-Walled Carbon Nanotubes as an Electrode Material of Supercapacitors

X. Sun¹, Y. Xu¹, J. Wang¹, S. Mao¹ (1.Xi'an Jiaotong Univ. , China)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-13-26] In Situ TEM Structural Characterization of Pristine and Composite Ion-induced Carbon Nanofibers in Field Electron Emission Process

M. Zamri^1,2, P. Ghosh¹, M. Sasase³, Y. Hayashi¹, M. Tanemura¹ (1.Nagoya Inst. of Tech , Japan, 2.Univ. Tech., Malaysia , Malaysia, 3.Wakasawan Energy Res. Center , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-13-27] Interfaces of High-k Gate Insulator in Carbon Nanotube FETs

K. Suzuki¹, Y. Ohno¹, S. Kishimoto¹, T. Mizutani¹ (1.Nagoya Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-13-28] Observation of n-type conduction in CNTFETs with Au contacts in vacuum

H. Imaeda¹, S. Ishii¹, S. Kishimoto¹, Y. Ohno¹, T. Mizutani¹ (1.Nagoya Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-14-1] Atomic Layer Deposited Aluminum Oxide Passivation Layers for Crystalline Silicon: Effects of Deposition Temperature on Film and Interface Structures

H. Lee^1,5, N. Sawamoto^1,5, T. Tachibana^1,5, N. Ikeno^1,5, K. Arafune^2,5, H. Yoshida^2,5, S. Satoh^2,5, K. Matsumoto³, K. Takahashi³, T. Chikyow⁴, A. Ogura^1,5 (1.Meiji Univ., 2.Univ. of Hyogo, 3.Tokyo Electron Ltd., 4.NIMS, 5.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-14-2] Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic Layer Deposited AlO_x

K. Arafune^1,5, S. Miki^1,5, R. Matsutani^1,5, J. Hamano^1,5, H. Yoshida^1,5, T. Tachibana^2,5, A. Ogura^2,5, K. Matsumoto³, K. Takahashi³, Y. Ohshita^4,5, S. Satoh^1,5 (1.Univ. of Hyogo, 2.Meiji Univ., 3.Tokyo Electron Ltd., 4.Toyota Technological Inst., 5.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-14-3] Optimization of a-Si/c-Si heterojunction solar cells by BF₂ ion implantation

T. H. Tsai¹, Y. C. Wu¹, C. H. Chen¹ (1.National Tsing Hua Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

741 results (711 - 720)

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