[P-9-1] Photo-rechargeable Battery Based on Photo-induced Copper Intercalation into Quasi-One-Dimensional Compound KFeS₂

S. Takenoshita¹, R. Yatabe¹, M. Kozaki¹, H. Kuriyaki¹, K. Toko¹ (1.Kyushu Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-9-2] Gap Plasmon Enhancement on a Silver Nanowire with AFM Metal Tip

Y. C. Wang^1,2, C. T. Yuan², M. Y. Kuo², M. C. Wu¹, J. Tang², M. H. Shih² (1.National Tsing Hua Univ., 2.Academia Sinica , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-9-3] Observation of cavity polaritons in one-dimensional photonic crystal with organic dye J-aggregates

K. Ishii¹, M. Yamashima¹, Y. Kondo¹, S. Nakanishi¹, N. Tsurumachi¹ (1.Kagawa Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-9-4] Phonon-Assisted Band-to-Band Luminescence and Carrier Recombination Processes in SrTiO₃

Y. Yamada¹, Y. Kanemitsu¹ (1.Kyoto Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-9-5] Effects of Interface Grading on Electronic States in Columnar Type-II Quantum Dots

T. Kawazu¹ (1.NIMS , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-9-6] Dynamic Nuclear Polarization Induced by Breakdown of Even-integer Quantum Hall Effect

S. Umezawa¹, R. Moriya¹, T. Yamashita¹, M. Kawamura^1,2,3, S. Masubuchi¹, Y. Hashimoto¹, S. Katsumoto¹, T. Machida¹ (1.Univ. of Tokyo, 2.RIKEN, 3.PRESTO-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-9-7] A Multi-purpose Electrostatically Defined Silicon Quantum Dot Structure

M. A. Sulthoni¹, T. Kodera¹, Y. Kawano¹, S. Oda¹ (1.Tokyo Tech , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-9-8] Time-resolved observation of carrier and coherent phonon in 4H-SiC under off-resonant excitation

K. Kato¹, K. Oguri¹, A. Ishizawa¹, H. Nakano¹, T. Sogawa¹ (1.NTT Basic Res. Lab. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-9-9] First-Principles Study of Electronic Structures of AlN/GaN Superlattices

K. Kamiya¹, M. Kasu², K. Shiraishi¹ (1.Univ. of Tsukuba, 2.NTT Basic Res. Lab. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-9-11] Effect of Capping Layer Growth on Bound Exciton Luminescence in Nitrogen δ-Doped GaAs

Y. Harada¹, T. Kubo¹, T. Inoue¹, O. Kojima¹, T. Kita¹ (1.Kobe Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

741 results (621 - 630)

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