AlN double hetero-structures

Y. Kobayashi¹, Y. Noguchi¹, K. Kumakura¹, T. Akasaka¹, H. Yamamoto¹, T. Makimoto¹ (1.NTT Basic Research Laboratories , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[I-1-3] Formation of a Step-Free Ultrathin InN Layer on a Step-Free GaN Surface

T. Akasaka¹, A. Berry¹, Y. Kobayashi¹, H. Yamamoto¹ (1.NTT Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[I-1-4] Optically pumped lasing action around unusual wavelength of 390 nm in hexagonal GaN microdisks fabricated by rf-MBE

T. Kouno¹, M. Sakai², K. Kishino³, K. Hara¹ (1.Shizuoka Univ., 2.Univ. of Yamanashi, 3.Sophia Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[I-1-5] Nano-Patterned Sapphire Substrates-Induced Strain-Related Quantum-Confined-Stark-Effect Behaviors of InGaN-Based Light-Emitting Diodes

V. C. Su¹, Y. J. Chen¹, M. L. Lee¹, Y. H. You¹, C. H. Kuan¹, P. H. Chen¹, C. J. Hsieh¹, R. M. Lin², S. F. Yu² (1.National Taiwan Univ., 2.Chang Gung Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[I-2-1] Increase of Si0.5Ge0.5 Bulk Single Crystal Size as Substrates for Strained Ge Epitaxial Layers

K. Kinoshita¹, O. Nakatsuka², Y. Arai¹, K. Taguchi³, H. Tomioka³, R. Tanaka³, S. Yoda¹ (1.JAXA, 2.Nagoya Univ., 3.AES Co. Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[I-2-2] Impact of Sn corporation on Epitaxial Growth of Ge Layers on Si(110) Substrates

S. Kidowaki¹, T. Asano¹, Y. Shimura¹, N. Taoka¹, O. Nakatsuka¹, S. Zaima¹ (1.Graduate School of Eng., Nagoya Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[I-2-3] Temperature dependent Al-induced crystallization of amorphous Ge thin films on glass substrates

K. Toko¹, M. Kurosawa², N. Fukata³, N. Saitoh⁴, N. Yoshizawa⁴, N. Usami⁵, M. Miyao², T. Suemasu¹ (1.Univ. of Tsukuba, 2.Kyusyu Univ., 3.National Inst. for Materials Science, 4.National Inst. of Advanced Industrial Science and Tech., 5.Tohoku Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[I-2-4] Leading Wave Crystallization from Fast Moving Molten Zone Formed by Micro-Thermal-Plasma-Jet Irradiation to Amorphous Silicon Films

S. Hayashi¹, Y. Fujita¹, T. Kamikura¹, K. Sakaike¹, M. Ikeda¹, H. Hanafusa¹, S. Higashi¹ (1.Hiroshima Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[I-2-5] Low-temperature Crystallization of a-Si, a-Ge and a-Si_1-xGe_x Films by Soft X-ray Irradiation

A. Heya¹, S. Kino¹, N. Matsuo¹, K. Kanda², S. Miyamoto², S. Amano², T. Mochizuki², K. Toko³, T. Sadoh³, M. Miyao³ (1.Univ. of Hyogo, 2.LASTI, Univ. of Hyogo, 3.Kyushu Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[I-2-6] Intrinsic bonding Defects in Non-crystalline (nc-) SiO2 and GeO2: Spectroscopic Detection of Differences between Vacancy Sites with and without O-atom occupancy

G. Lucovsky¹, D. Zeller¹, K. Wu¹, B. Papas¹, J. L. Whitten¹ (1.NC State Univ. , USA)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (261 - 270)

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