[PS-14-9] LACBED Analysis of Threading Dislocation with c+a Burgers Vector in 4H-SiC

Y. Sugawara¹, M. Nakamori¹, Y. Yao¹, Y. Ishikawa¹, K. Danno², H. Suzuki², T. Bessho², S. Yamaguchi³, K. Nishikawa³, Y. Ikuhara^1,4 (1.Japan Fine Ceramics Center, 2.Toyota Motor Corp., 3.Toyota Central Res. and Development Labs. Inc., 4.The Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-10] 3kV-class DIMOSFET on 4H-SiC (000-1)

H. Kono^1,2, M. Furukawa^1,2, K. Ariyoshi^1,2, T. Suzuki^1,2, Y. Tanaka^1,3, T. Shinohe^1,2 (1.R&D Partnership for Future Power Electronics Tech., 2.Corporate R&D Center, Toshiba Corp, 3.National Inst. of Advanced Industrial Science and Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-11] Carrier Transport Property of Heavily-Boron-Doped Degenerate Diamond Single-crystalline Thin Layers Etched with Hydrogen Plasma

T. Kuki¹, O. Maida¹, T. Ito¹ (1.Univ. of Osaka , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-12] First Principles Study of N Incorporation Effect during SiC Oxidation

S. Kato¹, K. Chokawa¹, K. Kamiya¹, K. Shiraishi¹ (1.Univ. of Tsukuba , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-13] Modeling of the Impurity-Gradient Effect in High-Voltage Laterally-Diffused MOSFETs

T. Iizuka¹, K. Fukushima¹, A. Tanaka¹, T. Sakuda¹, H. Kikuchihara¹, M. Miyake¹, H. J. Mattausch¹, M. Miura Mattausch¹ (1.Hiroshima Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-14L] Stability in Multi-parallel Operation of 3.3kV SiC-SBDs

A. Koyama^1,2, H. Watanabe^1,2, S. Nakata^1,2, Y. Nakaki^1,2, Y. Fujii^1,2, K. Otsuka², T. Kawakami², M. Imaizumi², Y. Toyoda^1,2, H. Sumitani², T. Miki^1,2, Y. Nakayama², T. Oomori^1,2 (1.FUPET, 2.Mitsubishi Electric Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-15-1] Optimal Si-SiGe hetero-structure thin-film solar cell with theoretical calculation and quantitative analysis

M. H. Liao¹, C. H. Chen¹, L. C. Chang¹, C. Yang¹, S. C. Kao¹, C. F. Hsieh² (1.National Taiwan Univ., 2.Industrial Tech. Research Inst. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-15-2] FT-IR and TPD Analysis of Ozone-Based Atomic Layer Deposited AlOx Passivation Films for Crystalline Silicon Solar Cells

K. Arafune^1,4, S. Yamamoto^1,4, K. Urushibata^1,4, S. Miki^1,4, H. Yoshida^1,4, A. Ogura^2,4, Y. Ohshita^3,4, S. Satoh^1,4 (1.Univ. of Hyogo, 2.Meiji Univ., 3.Toyota Tech. Inst., 4.JST-CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-15-3] Fabrication of Cu2ZnSnSe4 film solar cell by sputtering-selenization

S. Y. Kuo¹, J. F. Yang^1,2, F. I. Lai², C. J. Lin³ (1.Univ. of Chang Gung, 2.Univ. of Yuan-Ze, 3.Corp. of Solar Applied Materials Tech. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-15-4] The Effects of Various Curvatures on Stainless-Steel Substrate using Back Cor-rect Layer and on the CIS Film after RTP Selenization Process

R. F. Shih¹, W. T. Li², W. S. Peng³, T. T. Li¹, S. H. Chen², C. C. Kuo⁴, S. C. Hu⁵, Y. T. Lu⁵, S. N. Hsu⁵, H. C. Cheng⁵ (1.National Central Univ. of Taoyuan County, 2.National Central Univ. of Taoyuan County, 3.National Central Univ. of Taoyuan County, 4.National Central Univ. of Taoyuan County, 5.Chung-Shan Inst. of Sci. & Tech. of Taoyuan County , Taiwan, (R.O.C.))

2012 International Conference on Solid State Devices and Materials |PDF Download