[C-2-1] Growth and Characterization of Novel Material and Heterostructure III-V Semiconductor Nanowires

S. Lehmann¹, S. Ghalamestani¹, D. Jacobsson¹, M. Heurlin¹, J. Bolinsson¹, M. E. Messing¹, L. E. Wernersson³, J. Johansson¹, P. Caroff⁴, K. Deppert¹, K. A. Dick^1,2 (1.Solid State Physics, Lund Univ.,, 2.Polymer & Materials Chemistry, Lund Univ., 3.Electrical and Information Technologies, Lund Univ., 4.Institut d'Electronique, de Microelectronique et de Nanotechnologie, UMR , Sweden)

2012 International Conference on Solid State Devices and Materials |PDF Download

[C-2-2] InAsP-InAs-InAsP hetero-nanowires grown via the self-assisted vapor-liquid-solid mode

G. Zhang¹, K. Tateno¹, H. Gotoh¹, T. Sogawa¹ (1.NTT Basic Res. Labs. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[C-2-3] Control of Diameter and Pitch of InGaAs Nanowire Arrays in Selective-area Metalorganic Vapor Phase Epitaxy

Y. Kohashi¹, S. Sakita^1,2, S. Hara^1,2, J. Motohisa¹ (1.Graduate School of Info. Sci. and Tech., Hokkaido Univ., 2.Res. Center for Integrated Quantum Electronics, Hokkaido Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[C-2-4] Tuning the electro-optical properties of nanowires by applying uniaxial and ultrahigh strain

A. Lugstein¹, J. Greil¹, C. Zeiner¹, J. Stangl², M. Keplinger², R. Grifone², D. Kriegner², C. Somaschini³, L. Geelhaar³, E. Bertagnolli¹ (1.Vienna Univ. of Tech., Inst. for Solid State Electronics, 2.Johannes Kepler Univ. Linz, Inst. of Semiconductor and Solid State Physics , Austria, 3.Paul-Drude-Inst. for Solid State Electronics , Germany)

2012 International Conference on Solid State Devices and Materials |PDF Download

[C-2-5] Growth and Characterization of AlGaAs Nanowires on Insulateing Al₂O₃ Layers by Selective-Area Metal-Organic Vapor Phase Epitaxy

S. Sakita¹, M. Yatago¹, S. Hara¹ (1.Hokkaido Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[C-3-1] Metal Oxide Nanowires: Synthesis and Memristive Properties

T. Yanagida¹ (1.The Inst. of Scientific and Industrial Research, Osaka Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[C-3-2] ANALYTIC COMPACT MODEL of BALLISTIC and QUASI-BALLISTIC CYLINDRICAL GATE-ALL-AROUND MOSFET INCLUDING TWO SUBBANDS

H. Cheng^1,2, S. Uno^2,3, T. Numata^1,2, K. Nakazato¹ (1.Nagoya Univ., 2.CREST, 3.Ritsumeikan Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[C-3-3] Fully Encapsulated Gate-All-Around InAs Nanowire FET

S. Sasaki¹, G. Zhang¹, K. Tateno¹, H. Suominen¹, Y. Harada¹, S. Saito¹, A. Fujiwara¹, T. Sogawa¹, K. Muraki¹ (1.NTT Basic Research Labs., NTT Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[C-3-4] Isotope Effect on Phonon Thermal Transport in Silicon Nanowires

J. Hattori^1,2, S. Uno^1,2 (1.Ritsumeikan Univ., 2.JST, CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[C-4-1] Progress and challenges in large-scale graphene Tech. for RF applications

S. J. Han¹ (1.IBM T. J. Watson Research Center , USA)

2012 International Conference on Solid State Devices and Materials |PDF Download