[K-5-4] Air-Band Optical Cavity in Si Photonic Crystal Waveguides for Biosensing Applications

K. Hirai¹, T. Araki¹, J. Cai¹, K. Wada¹, Y. Ishikawa¹, K. Hayashi², T. Horiuchi², Y. Iwasaki², Y. Ueno², E. Tamechika³ (1.Univ. of Tokyo, 2.Labs. of NTT MI, 3.Corp. of NTT AT (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[K-5-5] Design of a three-dimensional photonic crystal nanocavity based on a <110>-layered diamond structure

T. Tajiri¹, S. Takahashi², A. Tandaechanurat², S. Iwamoto^1,2, Y. Arakawa^1,2 (1.Institute of Industrial Science, 2.Institute of Nano Quantum Information Electronics (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[K-6-1] A figure of merit based transmitter link penalty calculation for plasma-dispersion electro-optic Mach-Zehnder modulators

D.M. Gill¹, W..M.J. Green¹, S. Assefa¹, J.C. Rosenberg¹, T. Barwicz¹, S.M. Shank², Y.A. Vlasov¹ (1.IBM T. J. Watson Res. Center, 2.IBM Systems & Tech. Group, Microelectronics Division (USA))

2013 International Conference on Solid State Devices and Materials |PDF Download

[K-6-2] Low-Tuning-Power, Wavelength-Selectable Silicon Hybrid Laser for WDM Transmitter

S. Tanaka^1,2,3, S.H. Jeong^1,3, T. Akiyama^1,2,3, S. Sekiguchi^1,2,3, T. Kurahashi^1,2,3, Y. Tanaka^1,2,3, K. Morito^1,2,3 (1.PETRA, 2.Fujitsu Laboratories Ltd., 3.Fujitsu Ltd. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[K-6-3] Enhanced Electroluminescence from Germanium Waveguides by Local Tensile Strain with Silicon Nitride Stressors

K. Tani^1,2,3, K. Oda^1,2,3, T. Okumura^1,2,3, T. Takezaki³, J. Kasai^1,2,3, T. Mine³, T. Ido^1,2,3 (1.Photonics Electronics Tech. Res. Association, 2.Inst. for Photonics-Electronics Convergence System Tech., 3.Hitachi, Ltd. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[K-6-4] Resonant Photoluminescence from Microdisk Based on N-Doped, Tensile-Strained Ge on Si

X. Xu¹, K. Nishida¹, K. Sawano¹, T. Maruizumi¹, Y. Shiraki¹ (1.Tokyo City Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[K-6-5] Si-V luminescent center formation in nanocrystal diamond by atomic Si induced diamond nucleation

H. Isshiki¹, Y. Souma¹, T. Shigeeda¹, S. Takigawa¹, K. Matsushima¹ (1.Univ. of Electro-communications (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[K-6-6L] Highly-stabilized Operation of Si Photonics Wavelength Tunable Laser Diode

T. Kita¹, K. Nemoto¹, H. Yamada¹ (1.Tohoku Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-2-1] Power Device Trends for High- Power Density Operation of Power Electronics System

W. Saito¹ (1.Toshiba Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-2-2] 600 V-class Trench-Filling Super Junction MOSFET for High precision processing technology

Y. Oda¹, T. Yamamoto¹, K. Eguchi¹, Y. Kagata¹ (1.Denso Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

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