[PS-3-18] Negative differential conductivity in Gate-All-Around Si Nanowire FETs and its impact on Circuit Performance

K. Nayak¹, M. Bajaj², A. Konar², P.J. Oldiges³, H. Iwai⁴, K.V.R.M. Murali², V.R. Rao¹ (1.IIT Bombay, 2.IBM Semiconductor Research and Development Center, India, 3.IBM Semiconductor Research and Development Center, USA, 4.Tokyo Inst. of Tech. (India))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-19] Ge N-channel Omega-Gate Field Effect Transistors with [010] Channel Direction

C.W. Chen¹, C.T. Chung¹, J.Y. Tzeng¹, G.L. Luo², C.H. Chien^1,2 (1.National Chiao-Tung Univ., 2.National Nano Device Labs. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-20] Suppression of short channel effects in accumulation-type UTB-InGaAs-OI nMISFETs with raised S/D fabricated by gate-last process

M. Oda¹, T. Irisawa¹, E. Mieda¹, Y. Kurashima², H. Takagi², W. Jevasuwan¹, T. Maeda¹, O. Ichikawa³, T. Ishihara³, T. Osada³, Y. Miyamoto⁴, T. Tezuka¹ (1.GNC, AIST, 2.AIST, 3.Sumitomo Chemical Co. Ltd., 4.Tokyo Inst. of Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-21] Anisotropic Phonon-Confinement-Effects/Band-Structure-Modulation of Two-Dimensional Si Layers Fabricated on Silicon-on-Quartz Substrates

T. Mizuno¹, Y. Nagata¹, Y. Suzuki¹, Y. Nakahara¹, T. Tanaka¹, T. Aoki¹, T. Sameshima² (1.Kanagawa Univ., 2.Tokyo Univ. of Agri. and Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-22] Improvement of Color Separation Characteristics of a Side-Illuminated Color Photo Sensor

T. Ariyoshi¹, K. Sakamoto¹, Y. Arima¹ (1.Kyushu Inst. of Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-23] Current-Mode Ambient Light Sensor for Ultra Low Power Applications

T.Y. Tsai¹, Y.C. King¹, C.J. Lin¹ (1.National Tsing-Hua Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-24L] Low-Cost and Scalable Embedded Non-Volatile Memory Using Quasi-Planar Bulk (Bulk+) Transistor with Standard CMOS Gate Stacks

K. Ota¹, M. Saitoh¹, C. Tanaka¹, D. Matsushita¹, T. Numata¹ (1.Toshiba Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-1] Ultra-high LRS Nonlinearity and high speed in HfOX Based Complementary Resistive Switch with Ti electrode for Vertical RRAM

Y.S. Chen¹, P.S. Chen², H.Y. Lee¹, K.H. Tsai¹, T.Y. Wu¹, F. Chen¹, M.J. Tsai¹ (1.Indus. Tech. Res. Inst., 2.MingHsin Univ. of Sci. and Tech. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-2] A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidization of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer

M.S. Hadi¹, S. Kano¹, C. Dou¹, K. Kakushima¹, P. Ahmet¹, Y. Kataoka¹, A. Nishiyama¹, K. Natori¹, H. Wakabayashi¹, K. Tsutsui¹, H. Iwai¹, N. Sugii¹ (1.Tokyo Inst. of Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-3] Low-Power High-Performance Flexible Sm2O3 ReRAM for SoC Applications

S. Mondal¹, C.H. Chueh¹, T.M. Pan¹ (1.Chang Gung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

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