[C-6-2] Reliability Characteristics of MoS₂ FETs

W. Park¹, Y.G. Lee¹, J.J Kim², S.K. Lee¹, C.G. Kang¹, C. Cho², S.K. Lim², U. Jung¹, W.K. Hong³, B.H. Lee^1,2 (1.Gwangju Inst. of Sci. and Tech., 2.Gwangju Inst. of Sci. and Tech., 3.Korea Basic Sci. Inst. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[C-6-3] Photovoltaic Infrared Photoresponse of Graphene Quantum Hall Systems due to Cyclotron Resonance

R. Kashiwagi¹, S. Masubuchi¹, M. Onuki¹, M. Arai¹, K. Watanabe², T. Taniguchi², T. Machida^1,3 (1.Univ. of Tokyo, 2.National Inst. for Material Sci., 3.PRESTO-JST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[C-6-4] Asymmetry of Conduction and Valence Bands in Bilayer Graphene Estimated by The Quantum Capacitance Measurement

K. Kanayama¹, K. Nagashio¹, T. Nishimura¹, A. Toriumi¹ (1.Univ. of Tokyo (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[C-6-5] Effect of hydrogen annealing on electronic transport properties of quasi-free-standing monolayer graphene

S. Tanabe¹, M. Takamura¹, Y. Harada¹, H. Kageshima¹, H. Hibino¹ (1.NTT Basic Res. Labs. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[C-6-6] Reducing Carrier Density Pinning at Graphene/Metal Interfaces Using Multi-layer Graphene

K. Katakura¹, S. Nihei¹, H. Tomori¹, Y. Ito¹, Y. Ootuka¹, A. Kanda¹ (1.Univ. of Tsukuba (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[D-1-1] Process/Design co-optimization with FDSOI Technology for Advanced CMOS Applications

F. Arnaud¹, N. Planes¹ (1.STMICROELECTRONICS (France))

2013 International Conference on Solid State Devices and Materials |PDF Download

[D-1-2] Physical Limitation of pn Junction in Two Dimensional Si Layers for Future CMOS

T. Mizuno¹, Y. Nakahara¹, Y. Nagata¹, Y. Suzuki¹, Y. Kubodera¹, Y. Shimizu¹, T. Aoki¹, T. Sameshima² (1.Kanagawa Univ., 2.Tokyo Univ. of Agriculture/Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[D-1-3] Standard CMOS Based One-Time Programmable Switches with Gate-Induced Permanent Source-Drain Path

K. Zaitsu¹, K. Tatsumura¹, M. Matsumoto¹, M. Oda¹, S. Yasuda¹ (1.Toshiba Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[D-1-4] The Influence of Post-Etch InGaAs Fin Profile on Electrical Performance

Ts. Ivanov^1,2, A. Pourghaderi¹, D. Lin¹, J.K. Yu³, S. Tan³, K. Mikhaylich³, Y. Kimura³, D. Hellin⁴, J. Geypen¹, H. Bender¹, J. Vertommen⁴, G. Kamarthy³, N. Collaert¹, J. Marks³, V. Vahedi³, R. Arghavani³, A. Thean¹ (1.IMEC, 2.KULeuven, 3.Lam Res., USA, 4.Lam Res., Belgium (Belgium))

2013 International Conference on Solid State Devices and Materials |PDF Download

[D-1-5] Carrier Mobility on (100), (110), and (551) Oriented Atomically Flattened Si Surfaces for Multi-gate MOSFETs Device Design

R. Kuroda¹, Y. Nakao¹, A. Teramoto², S. Sugawa^1,2, T. Ohmi² (1.Graduate School of Engineering, Tohoku Univ., 2.New Industry Creation Hatchery Center, Tohoku Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

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