[PS-3-8] Impact of Extension Induced Fluctuation in FinFETs with Gate Underlap Structure

Y.J. Wang¹、P. Huang¹、Z. Xin¹、X.Y. Liu¹、G. Du¹、Y. Yang¹、J.F. Kang¹ (1.Peking Univ. (China))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-9] Shrinking Circuits Area with High-Mobility Channel MOSFETs

M. Ono¹、T. Tezuka¹ (1.GNC, AIST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-10] High Temperature Behavior of MR-DCIV Spectroscopy and Relationship with STI-based LDMOSFETs Reliability

Y.D. He¹、G.G. Zhang¹、Y. Yang¹、X. Zhang¹ (1.Peking Univ. (China))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-11] Understanding HCI Variability in Deeply Scaled nMOSFETs

L.J. Ma¹、X.L. Ji¹、Z.X. Chen²、Y.M. Liao¹、F. Yan¹、Y.L. Song³、Q. Guo⁴ (1.Nanjing Univ.、2.SanDisk Info. Tech. Co. Ltd.、3.SMIC、4.WXSMC (China))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-12] Effect of dynamic stress on OFF leakage of nanoscale pMOSFETs at high temperature

G.J. Kim¹、J.H. Seo¹、D. Son¹、S. Lee¹、C Kim¹、B. Kang¹ (1.Pohang Univ. of Sci. and Tech. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-13] Trap-Assisted Tunneling on Extended Defects in Tunnel Field-Effect Transistors

M. Reiche¹、M. Kittler²、H. Uebensee³ (1.Max Planck Inst. of Microstructure Physics、2.IHP microelectronics、3.CIS Res. Inst. of Microsensorics and Photovoltaics (Germany))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-14] Enhanced Subthreshold Slope and On-state Current in Tunneling Thin-Film-Transistors Using Metal Induced Lateral Crystallization

Y.H. Chen¹、L.C. Yen¹、T.S. Chang¹、T.Y. Chiang¹、P.Y. Kuo¹、T.S. Chao¹ (1.National Chiao Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-15] Investigation of Tunneling FET Device Designs for Improving Circuit Switching Performance and Energy

Y.N. Chen¹、M.L. Fan¹、V.P.H. Hu¹、P. Su¹、C.T. Chuang¹ (1.National Chiao-Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-16] Layout Design Considering Electro-thermal Properties for CMOS Inverter Composed of Multi-pillar Vertical MOSFET

A. Wang^1,2、T. Endoh^1,2 (1.Tohoku Univ.、2.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-17] A Quasi-2D Compact Model for Trapezoidal FinFETs with Non-uniform Dopant Profiles Using the Perturbation Method

X. Feng¹、W. Kang¹、Q. Cheng¹、Y. Chen¹ (1.Shenzhen Graduate School, Peking Univ. (China))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

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