2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

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894 results (471 - 480)

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[PS-8-6] Free Exciton Emission from Hexagonal Boron Nitride Films Grown on Sapphire Substrates by Low Pressure Chemical Vapor Deposition

^○N. Umehara¹, A. Masuda¹, T. Shimizu¹, T. Kouno¹, H. Kominami¹, K. Hara¹ (1.Shizuoka Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-8-7] N-face GaN (000-1) Films with Hillock-Free Smooth Surfaces Grown by Group-III-Source Flow-Rate Modulation Epitaxy

C. H. Lin¹, ^○T. Akasaka¹, H. Yamamoto¹ (1.NTT Corp.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-8-8] Heteroepitaxial Growth of GaSb Films on Si(111)-√3×√3-Ga Surface Phase

H. Shimoyama¹, ^○M. Mori¹, K. Maezawa¹ (1.Univ. of Toyama(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-8-9] Selective-Area Growth of Heavily N-Doped C-GaN/GaAs Nanostubs on Si(100) Substrate by Molecular Beam Epitaxy

^○Y. J. Chang¹, B. Beekley¹, M. Goorsky¹, J. Woo¹ (1.Univ. of California at Los Angeles(USA))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-8-10] AlGaN Microdisks on Top of Supporting GaN Columns Fabricated using Hydrogen Environment Anisotropic Thermal Etching

^○S. Suzuki¹, T. Kouno¹, H. Takeshima¹, A. Kikuchi², K. Kishino², M. Sakai³, K. Hara¹ (1.Shizuoka Univ., 2.Sophia Univ., 3.Univ. of Yamanashi(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-8-11] Effects of Double-cap Technique on the Improvement of InAs/InAlGaAs/InP Quantum Dots Grown by Metal-organic Chemical Vapor Deposition

^○B. Shi¹, K. M. Lau¹ (1.The Hong Kong Univ. of Sci. & Tech.(China))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-8-12] Effect of Remote Doping on Photoluminescence and Carrier Spin Dynamics in InGaAs Quantum Dots

^○D. Yamazaki¹, S. Chen¹, J. Takayama¹, A. Murayama¹ (1.Hokkaido Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-8-13] Improving Crystalline Quality of Sputtering Deposited MoS₂ Thin Film by Post-Sulfurization Annealing Using (t-C₄H₉)₂S₂

^○S. Ishihara¹, K. Suda¹, Y. Hibino¹, N. Sawamoto¹, T. Ohashi², S. Yamaguchi², K. Matsuura², H. Machida³, M. Ishikawa³, H. Sudoh³, H. Wakabayashi², A. Ogura¹ (1.Meiji Univ., 2.Tokyo Tech., 3.Gas-phase Growth Ltd.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-8-14] Large Effect of Etchant on Electrical Performance of Transferred CVD Graphene

^○T. W. Chen¹, Y. P. Hsieh¹, M. Hofmann² (1.National Chung Cheng Univ., 2.National Cheng Kung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-8-15] Improved Synthesis and Air Stability of Two-Dimensional Material GeH

N. Shao¹, R. R. Liang¹, C. C. Sun¹, L. Xiao¹, ^○J. Wang¹, J. Xu¹ (1.Tsinghua Univ.(China))

2015 International Conference on Solid State Devices and Materials |PDF Download

894 results (471 - 480)

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