[PS-2-9] Capacitance Characteristics of Low-k Low-Cost CVD Grown Polyimide Liner for High-Density Cu-TSVs in 3D-LSI

^○M. Mariappan¹, J. C. Bea¹, T. Fukushima¹, H. Hashimoto¹, K. W. Lee¹, M. Koyanagi¹ (1.Tohoku Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-10] Improving Step Coverage of PVD Barrier/Seed through Bias Power Alternation for High Aspect Ratio TSVs

^○S. Yang¹, W. Cheng¹, H. Wu¹, C. Song^1,2, W. Zhang^1,2 (1.National Center for Advanced Packaging Co., LTD., 2.Inst. of Microelectronics, Chinease Academy of Sci.(China))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-11] Thermal Mechanical Behavior of TSVs with WN/Ni as Barrier/Seed Layer System for 2.5D Integration

^○X. M. Jing¹ (1.Natianal Center for Advanced Packaging(China))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-12] Electroless Nickel Barrier/Seed Layer Deposition on Dielectric Liners for Advanced Cu-TSV Applications

^○T. Fukushima¹, K. Taniguchi², S. Watariguchi², M. Murugesan¹, C. Nagai¹, A. Nakamura¹, H. Hiroyuki¹, J. Bea¹, T. Tanaka¹, M. Koyanagi¹, K. Lee¹ (1.Tohoku Univ., 2.Meltex Inc.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-13] A Novel Low Temperature (<500°C) and Low-κ (3.8) Boron Nitride PECVD Offset Spacer Featuring 3D VLSI Integration

^○C. M. V. Lu^1,2, C. Bout¹, C. Fenouillet Beranger¹, A. Roule¹, M. P. Samson^1,2, B. Previtali¹, C. Arvet^1,2, A. Michallet^1,2, N. Rochat¹, S. Favier^1,2, R. Kachtouli¹, V. Loup¹, BessonP. ^1,2, M. Garcia Barros^1,2, N. Posseme¹, F. Pierre¹, P. Maury², D. Benoit², P. Batude¹, M. Vinet¹, T. Skotnicki² (1.CEA-LETI, MINATEC Campus, 2.STMicroelectronics(France))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-14] Impact and Improvement of Resistor Process Variation on RF Passive Circuit Design in Integrated Passive Devices (IPD) Technology

^○Y. C. Chang^1,2, P. Y. Wang¹, S. H. Hsu¹, Y. T. Chang³, C. K. Chen³, D. C. Chang² (1.National Tsing Hua Univ., 2.National Chip Implementation Center, National Applied Res. Labs., 3.Bureau of Standards, Metrology and Inspection, MOEA(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-15] Preparation of High Performance SiN_X Films Deposited by Reactive Sputtering and PECVD at Low Temperatures

^○M. Sato¹, M. B. Takeyama¹, Y. Nakata², Y. Kobayashi², T. Nakamura², A. Noya¹ (1.Kitami Inst. of Tech., 2.Fujitsu Laboratories Ltd.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-16] In Situ FTIR Spectroscopic and Kinetic Studies of Cu Surface Reduction by Using Formic Acid Treatment with Pt Catalysts

^○P. W. Chou¹, C. C. Kuo¹, J. Y. Lin², J. M. Song¹ (1.National Chung Hsing Univ., 2.Indus. Tech. Res. Inst.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-17] Measurement of the Strength at Grain Boundaries in Electroplated Copper Thin-Film Interconnections

^○T. Nakanishi¹, T. Kato¹, Y. Ichikawa¹, K. Suzuki¹, H. Miura¹ (1.Tohoku Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-18L] Radio Frequency Characteristics in Tantalum Nitride Thin Film Resistor

^○S. H. Kwon¹, M. Nam¹, A. Kim¹, K. Kang¹, S. J. Chae¹, S. J. Lee¹, W. S. Sul², S. G. Pyo¹ (1.Chung-Ang Univ., 2.NNFC(Korea))

2015 International Conference on Solid State Devices and Materials |PDF Download