[M-7-5] The Effects of AlN Passivation Layer to Metal Work-Function and Band Alignment of Metal Oxide Semiconductor Devices

^○H. B. Do¹, Q. H. Luc¹, M. T. H. Ha¹, S. H. Huynh¹, Y. C. Lin¹, E. Y. Chang¹ (1.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 12:00 PM - 12:15 PM |PDF Download

[M-7-6] Withdrawn

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 12:15 PM - 12:30 PM

[N-1-1] (Invited) Annealing Techniques for Low Temperature Junctions Design in a 3D VLSI Integration

C. Fenouillet Beranger¹, P. Batude¹, S. Kerdiles¹, B. Mathieu¹, P. Acosta Alba¹, L. Pasini^2,1, V. Lu^2,1, F. Deprat¹, L. Brunet¹, B. Sklenard¹, P. Rivallin¹, O. Rozeau¹, M-P. Samson^2,1, B. Previtali¹, L. Hortemel¹, N. Rambal^1,2, V. Lapras^1,2, M. Casse¹, S. Reboh¹, F. Piegas Luce¹, P. Besson¹, R. Kachtouli¹, A. Royer¹, D. Lafond¹, H. Dansas¹, F. Aussenac¹, J-P. Barnes¹, M. Vinet¹ (1.CEA-LETI, 2.STMicroelectronics(France))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 2:00 PM - 2:30 PM |PDF Download

[N-1-2] Microwave Plasma Doping: As Activation and Transport in Ge and Si

^○H. Miyoshi¹, M. Oka¹, Y. Kobayashi¹, H. Ueda¹, P. L. G. Ventzek², Y. Sugimoto¹, G. Nakamura¹, Y. Hirota¹, T. Kaitsuka¹, S. Kawakami¹ (1.Tokyo Electron Ltd., 2.Tokyo Electron America, Inc.(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 2:30 PM - 2:50 PM |PDF Download

[N-1-3] Formation of n⁺Poly-Ge Films with High Electron Concentration and High Electron Mobility by Flash Lamp Annealing for Poly-Ge nMOSFETs

^○M. Koike^1,3, K. Usuda^1,3, T. Mori^1,2, T. Maeda^1,2, T. Tezuka^1,3 (1.GNC, AIST, 2.AIST, 3.Toshiba Corp.(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 2:50 PM - 3:10 PM |PDF Download

[N-1-4] Effects of Microwave Annealing on Ge pMOSFET with Hydrogen-treated Interfacial Layer

^○K. S. Chang Liao¹, C. C. Li¹, L. J. Liu¹, M. C. Li¹, W. F. Chi¹, T. M. Lee¹, T. H. Su¹, C. H. Fu¹, Y. J. Lee² (1.National Tsing Hua Univ., 2.National Nano Device Labs.(Taiwan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 3:10 PM - 3:30 PM |PDF Download

[N-2-1] Optimization of Extension Doping Condition of FinFETs for Ultra-Low-Power Applications

^○T. Matsukawa¹, Y. X. Liu¹, T. Mori¹, Y. Morita¹, S. O'uchi¹, H. Fuketa¹, S. Otsuka¹, S. Migita¹, M. Masahara¹ (1.AIST(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 4:05 PM - 4:25 PM |PDF Download

[N-2-2] Ω-Gate Nanowire Transistors Realized by Sidewall Image Transfer Patterning: 35nm Channel Pitch and Opportunities for Stacked-Nanowires Architectures

^○L. Gaben^1,2,3, S. Barraud¹, P. Pimenta- Barros¹, Y. Morand², J. Pradelles¹, M. P. Samson², B. Previtali¹, P. Besson², F. Alain¹, S. Monfray², F. Boeuf², T. Skotnicki², BalestraF. ³, M. Vinet¹ (1.CEA-LETI, Minatec Campus, 2.STMicroelectronics, 3.IMEP-LAHC(France))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 4:25 PM - 4:45 PM |PDF Download

[N-2-3] A New Method to Induce Local Tensile Strain in SOI Wafers: First Strain Results of the \"BOX Creep\" Technique

A. Bonnevialle^1,2, C. Le Royer², Y. Morand¹, S. Reboh², J. M. Pedini¹, A. Roule², D. Marseilhan², P. Besson¹, D. Rouchon², N. Bernier², C. Tabone², C. Plantier², ^○L. Grenouillet², VinetM. ² (1.STMicroelectronics, 2.CEA-LETI(France))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 4:45 PM - 5:05 PM |PDF Download

[N-3-1] (Invited) High Performance Poly-Ge p- and nMOSFETs Fabricated by Flash Lamp Annealing

^○K. Usuda^1,2, Y. Kamata^1,2, Y. Kamimuta^1,2, M. Koike^1,2, T. Mori^2,3, T. Maeda^2,3, T. Tezuka^1,2 (1.Toshiba Corp., 2.GNC-AIST, 3.AIST(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 9:00 AM - 9:30 AM |PDF Download