2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

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894 results (571 - 580)

[PS-14-2] The Resistance Effect on Turn-on Speed of Resistor Assisted Trigger SCR Stacking Structure

^○S. S. Yen¹, C. C. Fan¹, Y. P. Lan¹, C. Y. Chang¹, Y. C. Chiu¹, Z. W. Jiang², S. C. Chang², L. Y. Hung², C. C. Tsai² (1.National Chiao Tung Univ., 2.Himax Tech. Inc.(Taiwan))

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[PS-14-3] Impact of 3D Stacking Silicon on Diamond Substrate for the ESD Protection Device

^○Y. Ikeda¹, K. Nakagawa¹, S. Matsumoto¹ (1.Kyushu Inst. of Tech. (Japan))

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[PS-14-4] The Heat Performance Study of Nanocrystal Diamond Film Used in a Thin Film Device

^○S. Duangchan¹, Y. Koishikawa¹, R. Shirahama¹, K. Oishi¹, A. Baba¹, S. Matsumoto¹, M. Hasegawa² (1.Kyushu Inst. of Tech., 2.AIST(Japan))

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[PS-14-5] Transport Characteristics of Minority Carriers in 4H-SiC/Si Heterojunction Bipolar Transistor Structures Fabricated by Surface Activated Bonding

^○J. Liang¹, S. Shimizu¹, S. Nishida¹, N. Shigekawa¹, M. Arai² (1.Osaka City Univ., 2.New Japan Radio Co., Ltd(Japan))

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[PS-14-6] Improved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal Oxidation

H. Xu^1,2, Q. Yang¹, M. Zhao¹, S. Wang¹, ^○Z. Jin¹, X. Liu¹, A. Chanthaphan², Y. Cheng², T. Hosoi², T. Shimura², H. Watanabe² (1.Institute of Microelectronics, Chinese Academy of Sciences, 2.Osaka Univ.(China))

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[PS-14-7] Removal of Near-Interface Oxide Traps at SiO₂/SiC Interface by Post-Oxidation Annealing in Reducing Ambient

^○H. Kajifusa¹, H. Hirai¹, Y. Fujino¹, K. Kita¹ (1.Univ. of Tokyo(Japan))

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[PS-14-8] Charge Distribution in Termination Area of 4H-SiC Diodes Analyzed by Measuring Depletion-layer Capacitance

^○H. Matsushima¹, H. Okino¹, K. Mochizuki¹, R. Yamada¹ (1.Hitachi, Ltd.(Japan))

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[PS-14-9] Investigation of 4H-SiC IGBT Turn-off Performance for Achieving Low Power Loss

^○D. Navarro¹, I. Pesic¹, Y. Morikawa¹, Y. Furui¹, M. Miura Mattausch² (1.Silvaco Japan, 2.Hiroshima Univ.(Japan))

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[PS-14-10] Characterization of Near-Interface Oxide Trap Density in SiC MOS Capacitors by Transient Capacitance Measurements at Various Temperatures

^○Y. Fujino¹, K. Kita¹ (1.Univ. of Tokyo(Japan))

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[PS-14-11] Mapping of Si/SiC Hetero p-n Junctions Using Scanning Internal Photoemission Microscopy

^○M. Shingo¹, J. Liang², N. Shigekawa², M. Arai³, K. Shiojima¹ (1.Univ. of Fukui, 2.Osaka City Univ., 3.New Japan Radio Co., Ltd.(Japan))

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894 results (571 - 580)