2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

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894 results (201 - 210)

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[J-1-4] Transient Thermal Characteristics of Packaged SiC SBDs and Its Temperature Dependence

^○T. Kim¹, T. Funaki¹ (1.Osaka Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 2:45 PM - 3:00 PM |PDF Download

[J-1-5] Turn-on Analysis of Si-IGBTs with Emitter Trenches

^○S. Machida¹, Y. Yamashita¹ (1.Totoya Central R&D Labs. Inc.(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 3:00 PM - 3:15 PM |PDF Download

[J-1-6] RF Characteristics of LDMOS Transistors with Superjunction Structures

^○B. Y. Chen^1,2, K. M. Chen¹, G. W. Huang¹, EdwardY. Chang² (1.National Nano Device Labs., 2.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 3:15 PM - 3:30 PM |PDF Download

[J-2-1] Al Doping of 4H-SiC by Laser Irradiation to Coated Film and Its Application to Junction Barrier Schottky Diode

^○A. Ikeda¹, R. Sumina¹, H. Ikenoue¹, T. Asano¹ (1.Kyushu Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 4:05 PM - 4:20 PM |PDF Download

[J-2-2] 4H-SiC Vertical Gate Trench with a Well-Controlled Shape Uniformly Formed by High Rate Etching and Annealing with Solid Source

^○H. Kitai¹, H. Shiomi¹, H. Tamaso¹, K. Fukuda¹ (1.AIST(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 4:20 PM - 4:35 PM |PDF Download

[J-2-3] Fabrication of Nitrogen-vacancy Centers in Diamond Power Devices for Electric-Field Sensing

^○W. Naruki¹, K. Tahara¹, T. Iwasaki^1,3, H. Kato^2,3, T. Makino^2,3, M. Ogura^2,3, D. Takeuchi^2,3, S. Yamasaki^2,3, M. Hatano^1,3 (1.Tokyo Tech, 2.AIST, 3.JST-CREST(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 4:35 PM - 4:50 PM |PDF Download

[J-2-4] Evaluation of Temperature Dependence of Surface Recombination Velocities for n-type 4H-SiC

^○K. Kohama¹, Y. Mori¹, M. Kato¹, M. Ichimura¹ (1.Nagoya Inst. of Tech.(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 4:50 PM - 5:05 PM |PDF Download

[J-6-1] (Invited) Threshold-Voltage Instability in SiC MOSFETs

^○A. Lelis, R. Green, D. Habersat (1.U.S. Army Res. Lab.(USA))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 9:00 AM - 9:30 AM |PDF Download

[J-6-2] Threshold Voltage Instability in 4H-SiC MOSFETs with Nitrided Gate Oxide Revealed by Non-relaxation Method

^○M. Sometani^1,2, D. Okamoto², S. Harada², H. Ishimori², S. Takasu², T. Hatakeyama², M. Takei^1,2, Y. Yonezawa², K. Fukuda², H. Okumura² (1.Fuji Electric Co., Ltd, 2.AIST(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 9:30 AM - 9:45 AM |PDF Download

[J-6-3] Effect of Nitridation for SiO₂/SiC Interface on Defects Properties near Conduction Band Edge

^○W. Takeuchi¹, K. Yamamoto², M. Sakashita¹, T. Kanemura², O. Nakatsuka¹, S. Zaima¹ (1.Nagoya Univ., 2.DENSO Corp.(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 9:45 AM - 10:00 AM |PDF Download

894 results (201 - 210)

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