2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

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894 results (211 - 220)

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[J-6-4] Origin of Low Channel Mobility and Threshold Voltage Instability of SiC-MOSFETs

^○H. Shiomi¹, H. Kitai¹, M. Tsujimura¹, Y. Kiuchi¹, D. Nakata², S. Ono², K. Kojima¹, K. Fukuda¹, K. Sakamoto¹, K. Yamasaki², H. Okumura¹ (1.AIST, 2.New Japan Radio Co., Ltd(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 10:00 AM - 10:15 AM |PDF Download

[K-1-1] (Invited) Novel Steep-Slope Switch Device with Improved Figures of Merit (FOM) through Mechanism Engineering for Ultra-Low-Power Applications

^○R. Huang, Q. Huang, C. Wu, J. Wang, H. Zhu, C. Chen, L. Guo, Y. Wang (1.Peking Univ.(China))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 2:00 PM - 2:30 PM |PDF Download

[K-1-2] Design of Complementary Raised-Drain Tunneling FET for Ultra-Low Voltage Applications

^○Y. B. Zhao¹, E. R. Hsieh¹, C. H. Chien¹, S. S. Chung¹ (1.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 2:30 PM - 2:50 PM |PDF Download

[K-1-3] Steep Subthreshold Swing Metal-Oxide-Semiconductor Field-Effect Transistors Utilizing Nonlinear Gate Dielectric Insulators

^○H. Ota^1,3, S. Migita^1,3, K. Fukuda¹, A. Toriumi^2,3 (1.AIST, 2.Univ. of Tokyo, 3.JST-CREST(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 2:50 PM - 3:10 PM |PDF Download

[K-1-4] Variation Analysis for Ultra-Low Voltage 8T Tunnel FET SRAM Using Closed-Form Analytical Model of Static Noise Margin

^○H. Fuketa¹, S. O'uchi¹, K. Fukuda¹, T. Mori¹, Y. Morita¹, M. Masahara¹, T. Matsukawa¹ (1.AIST(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 3:10 PM - 3:30 PM |PDF Download

[K-1-5] Performance Improvement in Lattice Matched SiGeSn/GeSn P-Channel TFET with Type-II Staggered Tunneling Junction

^○H. Wang¹, G. Han^1,2, Y. Liu¹, C. Zhang², Y. Hao² (1.Chongqing Univ., 2.Xidian Univ.(China))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 3:30 PM - 3:50 PM |PDF Download

[K-2-1] (Invited) Ge CMOS Devices and Logic Circuits

^○H. Wu, P. D. Ye (1.Purdue Univ.(USA))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 4:05 PM - 4:35 PM |PDF Download

[K-2-2] Impact of Bandstructure Effects in III-V nMOSFETs

G. Hiblot^1,3, Q. Rafhay³, G. Mugny^1,2, T. Ferrotti^1,2, G. Ghibaudo³, ^○F. Boeuf¹ (1.STMicrolectronics, 2.CEA-LETI, 3.IMEP-LAHC(France))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 4:35 PM - 4:55 PM |PDF Download

[K-2-3] High Performance Low Thermal Budget Ge n- and p-MOSFETs by using Ion Implantation after Germanidation Technique

^○W. H. Chang¹, H. Ota¹, T. Maeda¹ (1.AIST(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 4:55 PM - 5:15 PM |PDF Download

[K-2-4] Steep-Slope Tunnel FET using InGaAs-InP Core-Shell Nanowire/Si Heterojunction

^○K. Tomioka^1,2, F. Ishizaka¹, J. Motohisa¹, T. Fukui¹ (1.Hokkaido Univ., 2.JST-PRESTO(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 5:15 PM - 5:35 PM |PDF Download

894 results (211 - 220)

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