2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

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763 results (641 - 650)

[PS-8-09] Study on Fabrication of Yttrium Oxide Thin Films Using Mist CVD

^○L. Liu¹, M. Nishi¹, S. Sato¹, P. Rutthongjan¹, M. Sakamoto¹, Y. Kobayashi¹, G. T. Dang¹, E. K. C. Pradeep¹, T. Kawaharamura¹ (1.Kochi Univ. of Tech. (Japan))

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[PS-8-10] Study on the Influence Factors of Antimony Doped Tin Oxide Thin Films With High Conductivity Deposited via Mist CVD

^○L. Liu¹, T. Kawaharamura¹, T. Uchida², S. Fujita², H. Orita³, H. Kobayashi³ (1.Kochi Univ. of Tech. (Japan), 2.Kyoto Univ. (Japan), 3.TMEIC (Japan))

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[PS-8-11] Electronic states in the neutral-beam-formed Ta₂O₅ film measured by thermally stimulated current method

^○T. Ohno^1,2, H. Shima³, H. Akinaga³, S. Samukawa¹ (1.Tohoku Univ. (Japan), 2.PRESTO-JST (Japan), 3.AIST (Japan))

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[PS-8-12] Thermal solid-phase crystallization of amorphous V-doped ZnO film stacked on highly oriented ZnO

^○K. Shito¹, H. Chiba^1,2, T. Kawashima¹, K. Washio¹ (1.Tohoku Univ. (Japan), 2.Japan Society for the Promotion of Sci. Res. Fellowships for Young Scientists (Japan))

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[PS-8-13] Thermal stability of high-pressure phase of SrO:Ce phosphor

^○K. Komatsu¹, A. Nakamura^1,2, H. Saitoh¹ (1.Nagaoka Univ.of Tech. (Japan), 2.Chubu Chelest Co.Ltd. (Japan))

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[PS-8-14] Single crystal growth of Mg, Ce co-doped Lu₂Gd₁ (Ga,Al)₅O₁₂ by micro-pulling down method and their luminescence properties

^○K. Kamada^1,2, H. Yamaguchi¹, S. Kurosawa¹, Y. Shoji^1,2, Y. Yokota¹, Y. Ohashi¹, A. Yoshikawa^1,2 (1.Tohoku Univ. (Japan), 2.C&A Corp. (Japan))

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[PS-8-15 (Late News)] Study of Sn and Mg Doping Effects on TiO₂/Ge Stack Structure by Combinatorial Synthesis

Y. Suzuki^1,2,^○T. Nagata^2,3, Y. Yamashita², A. Ogura¹, T. Chikyow² (1.Meiji Univ. (Japan), 2.NIMS (Japan), 3.PRESTO-JST (Japan))

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[PS-9-01] Observation of current-injected Landau-level emission in graphene using a quantum-well based infrared phototransistor

^○K. Takizawa¹, A. Nishimura¹, H. Murano¹, D. Nakagawa¹, K. Ikushima¹, S. Kim², M. Patrashin³, I. Hosako³, S. Komiyama² (1.Tokyo Univ. of Agri. & Tech. (Japan), 2.Univ. of Tokyo (Japan), 3.NICT (Japan))

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[PS-9-02] Boron-doped Diamond Superconducting Quantum Interference Devices with Two Step-Edge Josephson Junctions

^○I. Tsuyuzaki¹, T. Kageura¹, M. Hideko¹, Y. Sasama², T. Yamaguchi², Y. Takano², M. Tachiki², K. Hirata², S. Ooi², S. Arisawa², H. Kawarada¹ (1.Waseda Univ. (Japan), 2.MANA NIMS (Japan))

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[PS-9-03] Electroluminescence of Super-atom-like Si-Ge based Quantum Dots Floating Gate

^○K. Makihara¹, M. Ikeda¹, N. Fujimura¹, A. Ohta¹, Seiichi Miyazaki¹ (1.Nagoya Univ. (Japan))

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763 results (641 - 650)