The Japan Society of Applied Physics

763 results (331 - 340)

[N-6-01 (Invited)] Demonstration of Reduction in Vce (sat) of IGBT based on a 3D Scaling Principle

K. Kakushima1, T. Hoshii1, K. Tsutsui1, A. Nakajima2, S. Nishizawa3, H. Wakabayashi1, I. Muneta1, K. Sato4, T. Matsudai5, W. Saito5, T. Saraya6, K. Itou6, M. Fukui6, S. Suzuki6, M. Kobayashi6, T. Takakura6, T. Hiramoto6, A. Ogura7, Y. Numasawa7, I. Omura8, H. Ohashi1, H. Iwai1 (1.Tokyo Tech (Japan), 2.AIST (Japan), 3.Kyushu Univ. (Japan), 4.Mitsubishi Electric Corp. (Japan), 5.Toshiba Electronic Devices & Storage Corp. (Japan), 6.Univ. of Tokyo (Japan), 7.Meiji Univ. (Japan), 8.Kyushu Inst. of Tech. (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 11:15 AM - 11:45 AM |PDF Download

[N-6-04] Vertical-type 2DHG Diamond MOSFETs

N. Oi1, T. Kudo1, T. Muta1, S. Okubo1, I. Tsuyuzaki1, T. Kageura1, M. Inaba1,2, S. Onoda3, A. Hiraiwa1, H. Kawarada1 (1.Waseda Univ. (Japan), 2.Nagoya Univ. (Japan), 3.National Inst for Quantum and Radiological Sci. and Tech. (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 12:15 PM - 12:30 PM |PDF Download

763 results (331 - 340)