2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

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763 results (411 - 420)

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[PS-5-08] Low Power UWB CMOS LNA using Resistive Feedback and Current-Reused Techniques

^○J. -C. Guo¹, C. -S. Lin¹ (1.National Chiao Tung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 12:19 PM - 12:21 PM |PDF Download

[PS-5-09] Reconfigurable Block-based Normalization Circuit for On-chip Object Detection

^○A. Luo¹, F. An¹, X. Zhang¹, L. Chen, H. J. Mattausch¹ (1.Hiroshima Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 12:21 PM - 12:23 PM |PDF Download

[PS-5-10 (Late News)] A High-Efficiency Wide-Input-Voltage-Range CMOS Voltage Doubler Rectifier for RF Wireless Power Transfer Systems

T. -H. Tsai¹,^○W. -M. Cheng¹, Y. -L. Lo¹, W. -B. Yang² (1.National Kaohsiung Normal Univ. (Taiwan), 2.Tamkang Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 12:23 PM - 12:25 PM |PDF Download

[PS-6-01] Impact of Substrate off-angle on the m-plane GaN Schottky Diodes

^○H. Yamada¹, H. Chonan¹, T. Takahashi¹, M. Shimizu¹ (1.AIST (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:35 AM - 11:37 AM |PDF Download

[PS-6-02] RF Power Characteristics of the AlGaN/GaN HEMTs with Molecular Beam Deposition CeO₂ as Gate Insulator

Y. -S. Chiu¹,^○Y. Lin¹, Y. C. Lin¹, J. C. Huang¹, H. Iwai², K. Kakushima², E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan), 2.Tokyo Tech (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:37 AM - 11:39 AM |PDF Download

[PS-6-03] Electron Mobility of Two-dimensional Electron Gas in InGaN Heterostructures: Effects of Alloy Disorder and Random Dipole Scatterings

^○T. Hoshino¹, N. Mori¹ (1.Osaka Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:39 AM - 11:41 AM |PDF Download

[PS-6-04] Electrical Characteristics of n-GaN Schottky Contacts on Cleaved Surfaces of Free-Standing Substrates -- Metal Work-Function Dependence of Schottky Barrier Height --

^○H. Imadate¹, T. Mishima², K. Shiojima¹ (1.Univ. of Fukui (Japan), 2.Hosei Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:41 AM - 11:43 AM |PDF Download

[PS-6-05] Investigation of the Interface Stability of the Metal/HfO₂/AlN/InGaAs MOS Devices

H. Binh Do¹, Q. H. Luc¹, M. T. H. Ha¹, S. H. Huynh¹, T. A. Nguyen¹, J. W. Lin¹, K. S. Yang¹,^○C. -C. F. Chiang¹, Y. -D. Jin¹, Y. C. Lin¹, E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:43 AM - 11:45 AM |PDF Download

[PS-6-06] AlGaN/GaN Schottky Gate Fin-HEMT Fabricated on 8-inch Silicon (111) Substrate with Thin Buffer Layer

^○L. -C. Chang¹, C. -J. Dai¹, M. Yang¹, Y. -H. Jiang¹, C. -H. Wu¹ (1.National Taiwan Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:45 AM - 11:47 AM |PDF Download

[PS-6-07] Effects of Channel Profile and Source/Drain Resistance on P-type SnO TFTs

^○M. -H. Wu¹, H. -C. Lin¹, P. -W. Li¹ (1.National Chiao Tung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 11:47 AM - 11:49 AM |PDF Download

763 results (411 - 420)

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