[PS-9-04] Charge Stability of Shallow Nitrogen Vacancy Center in Diamond with Radical Exposure Nitridation Surface for DNA Detection

^○S. Kawai¹, H. Yamano¹, M. Kajiya¹, K. Kato¹, J. J. Buendia¹, T. Kageura¹, M. Inaba^1,6, R. Fukuda¹, T. Okada¹, I. Higashimata¹, M. Haruyama^2,3, T. Tanii¹, S. Onoda², W. Kada³, O. Hanaizumi³, T. Teraji⁴, S. Kono¹, J. Isoya⁵, H. Kawarada¹ (1.Waseda Univ. (Japan), 2.National Inst. for Quantum and Radiological Sci. and Tech. (Japan), 3.Gunma Univ. (Japan), 4.NIMS (Japan), 5.Univ. of Tsukuba (Japan), 6.Nagoya Univ. (Japan), 7.Waseda Univ. (Japan))

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[PS-9-05] A Simple Efficient Method of Nanofilm-on-Bulk-Substrate Thermal Conductivity Measurement Using Raman Thermometry

^○V. Poborchii¹, N. Uchida¹, Y. Miyazaki¹, T. Tada¹, P. Geshev² (1.AIST (Japan), 2.Inst. of Thermophysics of the Russian Academy of Sciences, Novosibirsk (Russia))

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[PS-9-06] A Vertical Ge Tunneling FET With Tapered Source/Drain Strctures

K. Wu¹,^○G. -L. Luo¹, C. -L. Chu¹, S. -H. Chen¹, B. -Y. Chen¹, W. -F. Wu¹, W. -K. Yeh^1,2, C. -H. Chien³ (1.National Nano Device Labs. (Taiwan), 2.National Univ. of Kaohsiung (Taiwan), 3.National Chiao Tung Univ. (Taiwan))

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[PS-9-07] Device Performance and Characteristics of Nano Scale n-type Junctionless FET (nJLFET) with Raised Source and Drain Structure

C. -L. Lin¹, Y. -J. Lu¹, J. -D. Lee¹,^○W. -T. Hong¹, K. -P. Chen¹, S. -H. Ong¹, W. -C. Chen¹, J. -S. Wu¹, Y. -S. Jhu¹, P. -C. Juan², T. -K. Kang¹, P. -C. Yang¹ (1.Feng Chia Univ. (Taiwan), 2.Mingchi Univ. of Tech. (Taiwan))

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[PS-9-08] Low-power, Forming-free and Analog-type Resistive Switching in Pt/SiO_x/ZnO/Pt Oxide Heterostructures as an Electronic Synapse

^○A. S. Sokolov¹, D. Lim¹, H. Han¹, Y. Jeon¹, Y. Abbas¹, S. Son, C. Choi¹ (1.Hanyang Univ. (Korea))

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[PS-9-9 (Late News)] Fabrication and characterization of p-type heavily doped silicon quantum dots

^○S. Mizoguchi¹, N. Shimatani¹, T. Makino¹, Y. Yamaoka¹, T. Kodera¹ (1.Tokyo Tech (Japan))

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[PS-9-10 (Late News)] [No-Show]Effect of PMN-PT Morphology on the Energy Harvesting Properties of PMN-PT/P[VDF-TrFE] Piezoelectric Nanogenerator

^○C. G. Wu¹ (1.Univ. of Electronic Science and Technology of China (China))

2017 International Conference on Solid State Devices and Materials

[PS-9-11 (Late News)] Fabrication of Y128-cut and Y36-cut lithium niobate single crystalline thin films by crystal-ion-slicing technique

^○Y. Shuai¹, C. Gong¹, X. Bai¹, C. Wu¹, W. Luo¹, R. Böttger², S. Zhou², W. Zhang¹ (1.Univ. of Electronic Sci. and Tech. of China (China), 2.Inst. of Ion Beam Physics and Materials Research (Germany))

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[PS-10-01] Fabrication of Single-Crystalline Thin-Film Utilizing Liquid-Crystalline Alkyl-Substituted Phthalocyanine

^○A. Fujii¹, T. Kitagawa¹, Y. Anzai¹, M. Nakatani¹, M. Ohmori¹, H. Kajii¹, M. Ozaki¹ (1.Osaka Univ. (Japan))

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[PS-10-02] Growth of Alkyl-Monosubstituted Thiophene/Phenylene Co-Oligomer Crystals and Their Device Application

^○K. Sugahara¹, T. Nakagawa¹, R. Hirase², T. Katagiri³, Y. Inada¹, T. Yamao¹, S. Hotta¹ (1.Kyoto Inst. of Tech. (Japan), 2.Hyogo Prefectural Inst. of Tech. (Japan), 3.Sumitomo Seika Chemicals Co., Ltd. (Japan))

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