2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

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763 results (21 - 30)

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[A-6-02] Sub 1 V 60 nm Vertical Body Channel MOSFET Based 6T SRAM Array with Wide Noise Margin and Excellent Power Delay Product

^○R. Ogasawara^1,2,3, T. Endoh^1,2,3 (1.Tohoku Univ. (Japan), 2.ACCEL, JST (Japan), 3.OPERA, JST (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 11:35 AM - 11:55 AM |PDF Download

[A-6-03] In-situ Observation of Cu Residuals in Resistance Switching Failure of MoO_x/Al₂O₃ CBRAM

^○M. Arita¹, R. Ishikawa¹, S. Hirata¹, A. Turumaki-Fukuchi¹, Y. Takahashi¹ (1.Hokkaido Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 11:55 AM - 12:15 PM |PDF Download

[A-7-01] The Experimental Observations of a New Dielectric-fuse Breakdown in a Bilayer-RRAM to Realize the OTP Functionality

^○E. R. Hsieh¹, H. W. Cheng¹, Z. H. Huang¹, C. H. Chuang¹, C. H. Chen¹, S. Chung¹ (1.National Chiao Tung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 1:40 PM - 2:00 PM |PDF Download

[A-7-02] A Novel Ternary Content Addressable Memory Design Based on RRAM with High Intensity and Low Search Energy

^○R. Han¹, W. Shen¹, P. Huang¹, Z. Zhou¹, L. Liu¹, X. Liu¹, J. Kang¹ (1.Peking Univ. (China))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 2:00 PM - 2:20 PM |PDF Download

[A-7-03] Error Free Physically Unclonable Function (PUF) with Programmed ReRAM using Reliable Resistance States by Novel ID-Generation Method

^○P. H. Tseng¹ (1.Macronix International Co., Ltd. (Taiwan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 2:20 PM - 2:40 PM |PDF Download

[A-7-04] Highly Reliable Logic-Compatible MTP Memory for Automotive Applications

^○C. Y. Lo¹, S. C. Wang¹ (1.eMemory Technology Inc. (Taiwan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 2:40 PM - 3:00 PM |PDF Download

[A-8-01 (Invited)] Transition Metal-Ge-Te Chalcogenides for PCRAM Material

^○Y. Sutou¹, S. Shindo¹, S. Hatayama¹, Y. Saito², J. Koike¹ (1.Tohoku Univ. (Japan), 2.AIST (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 3:10 PM - 3:40 PM |PDF Download

[A-8-02] Origin of the difference between high resistive and low resistive structures for interfacial phase change memories based on GeTe/Sb₂Te₃ superlattice

^○H. Shirakawa¹, M. Araidai¹, K. Shiraishi¹ (1.Nagoya Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 3:40 PM - 4:00 PM |PDF Download

[A-8-03] Thermal Stability and Switching Performance of iPCM at Elevated Temperature

^○K. V. Mitrofanov¹, Y. Saito¹, N. Miyata¹, P. Fons¹, A. V. Kolobov¹, J. Tominaga¹ (1.AIST (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 4:00 PM - 4:20 PM |PDF Download

[A-8-04] Continuous Multilevel Compact Model of Subthreshold Conduction and Threshold Switching in Phase-Change Memory

^○C. Pigot^1,2,3, F. Gilibert¹, M. Reyboz², M. Bocquet³, P. Zuliani⁴, J. -M. Portal³ (1.STMicroelectronics, Crolles (France), 2.CEA-Leti (France), 3.IM2NP, Aix-Marseille Univ. (France), 4.STMicroelectronics, Agrate (Italy))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 4:20 PM - 4:40 PM |PDF Download

763 results (21 - 30)

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