2018 International Conference on Solid State Devices and Materials

Sep 9, 2018 - Sep 13, 2018
University of Tokyo

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922 results (171 - 180)

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[E-4-05] A Development of Self-Consistent Density Functional Program and Its Application to Electronic Structure Calculations of Semiconductors

^○T. Hamada¹, T. Yamasaki², T. Ohno¹ (1.National Inst. Materials Sci. (Japan), 2.Osaka Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 11:45 AM - 12:00 PM |PDF Download

[E-5-01 (Invited)] New insights into doping behavior of catalyst-free (In,Ga)As-based nanowires

J. Becker¹, M. Sonner¹, D. Ruhstorfer¹, M. Doeblinger², M.O. Hill³, J. Treu¹, L.J. Lauhon³, J.J. Finley¹,^○G. Koblmueller¹ (1.Technical Univ. of Munich (Germany), 2.Ludwings-Maximilians-Univ. Munich (Germany), 3.Northwestern Univ. (USA))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 1:30 PM - 2:00 PM |PDF Download

[E-5-02] Effect of V-III Molar Flow Ratios on InAs Nanowire Structure Formation at Crystal Quality

^○D. Anandan¹, H.L. Ko¹, R.K. Kakkerla¹, H.W. Yu¹, V. Nagarajan¹, S.K. Singh¹, E.Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 2:00 PM - 2:15 PM |PDF Download

[E-5-03] Realization of hole gas accumulation in p-Si/i-Ge core-shell and p-Si/i-Ge/p-Si core-double shell nanowires

^○X. Zhang^1,2, W. Jevasuwan¹, K. Pradel¹, T. Subramani¹, T. Takei¹, N. Fukata^1,2 (1.NIMS (Japan), 2.Univ. of Tsukuba (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 2:15 PM - 2:30 PM |PDF Download

[E-5-04] Synthesis, Structural and Photoluminescence Properties of Mg₂Si/Si Nanosheet Bundle Composites

Y. Huang¹, R. Tamaki², P. Yuan¹, Y. Kumazawa¹, N. Atsumi¹, N. Ahsan², Y. Okada², Y. Hayakawa¹,^○H. Tatsuoka¹ (1.Shizuoka Univ. (Japan), 2.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 2:30 PM - 2:45 PM |PDF Download

[E-5-05] Synthesis of Ga₂O₃: Co nanocrystals at normal temperature and atmospheric pressure

K. Mukai¹,^○A. Tsuno¹, K. Shudo¹ (1.Yokohama National Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 2:45 PM - 3:00 PM |PDF Download

[E-6-01] Atomically flat interface formation on Ge(111) in oxidation process

^○T. Nishimura¹, S. Takemura¹, X. Wang¹, S. Shibayama¹, T. Yajima¹, A. Toriumi¹ (1.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 3:15 PM - 3:30 PM |PDF Download

[E-6-02] Low-Temperature Formation of n-Type Ge on Insulator by Thickness-Modulated Sb-Induced Layer Exchange Crystallization Combined with Thin Ge Under-Layer Insertion

^○H. Gao¹, M. Miyao¹, T. Sadoh¹ (1.Kyushu Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 3:30 PM - 3:45 PM |PDF Download

[E-6-03] Enhanced Growth of High Sn Concentration (Sn>=10%) GeSn on Insulator by Low Temperature (~170°C) Solid-Phase Crystallization Combined with Weak Laser Irradiation

^○T. Sadoh¹, T. Sugino¹, K. Moto¹, R. Matsumura¹, H. Ikenoue¹, M. Miyao¹ (1.Kyushu Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 3:45 PM - 4:00 PM |PDF Download

[E-6-04] Demonstration of mm-long Nearly Intrinsic GeSn Single-crystalline Wires on Quartz Substrate by Nucleation-controlled Liquid-phase Crystallization

^○Y. Wada¹, K. Inoue¹, T. Hosoi¹, T. Shimura¹, H. Watanabe¹ (1.Osaka Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:00 PM - 4:15 PM |PDF Download

922 results (171 - 180)

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