2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

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633 results (491 - 500)

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[PS-2-09] Design Space Exploration of Dual-Port FeFET for Low-Voltage Applications

^○Chen-Wei Huang¹, Pin Su¹ (1. National Yang Ming Chiao Tung University (Taiwan))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-10] Ab initio investigation of defects in AlScN wurtzite ferroelectric memory materials

Qiang Wang^1,2, ^○Shao-Xiang Go¹, Desmond Loke¹ (1. Singapore University of Technology and Design (Singapore), 2. Agency for Science, Technology and Research (A*STAR) (Singapore))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-11] Influence of H₂ in Reactive Sputtering of Ferroelectric AlScN Films

^○Si- Meng Chen¹, Sung-Lin Tsai¹, Takuya Hoshii¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Kuniyuki Kakushima¹ (1. Tokyo Inst. of Tech. (Japan))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-12] Highly Reliable Dual-mode Memristor with Digital and Analog Features

^○Dong Hoon Shin¹, Taegyun Park¹, Yeong Rok Kim¹, Cheol Seong Hwang¹ (1. Seoul National Univ. (Korea))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-13] Finite element analysis of oxygen vacancy behavior in four-terminal TiO_2-x memristive devices

^○Yuki Koizumi¹, Ryotaro Miyake¹, Yusuke Hayashi¹, Tetsuya Tohei¹, Akira Sakai¹ (1. Osaka Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-14] Withdrawn

2023 International Conference on Solid State Devices and Materials

[PS-2-15] Emulation of Short-term and Long-term Synaptic Plasticity in Chalcogenide-based Diffusive Memristor Device

Haider Abbas¹, Asif Ali¹, ^○Jiayi Li¹, Diing Shenp Ang¹ (1. Nanyang Technological Univ. (Singapore))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-16] Improved Response to NO Gas Observed in HfO₂-based Gasistor Devices due to CNTs-Top Electrode and en-APTAS Membrane

^○Myoungsu Chae¹, Doowon Lee¹, Hee-Dong Kim¹ (1. Univ. of Sejong (Korea))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-17] Dual Word Line Enabled Energy-Efficient High-Speed RFET based 1T-eDRAM

^○Abhinav Kranti¹, Rohit Kumar Nirala¹, Sandeep Semwal¹ (1. Indian Institute of Technology Indore, India (India))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-18] Capacitorless DRAM Based on Polycrystalline-Silicon with a Separated Channel Layer and a Fin-Shaped Storage Layer

^○Seung Ji Bae¹, Sang Ho Lee¹, Jin Park¹, Ga Eon Kang¹, Jun Hyeok Heo¹, So Ra Jeon¹, Min Seok Kim¹, Jeong Woo Hong¹, Jaewon Jang¹, Jin-Hyuk Bae¹, Sin-Hyung Lee¹, In Man Kang¹ (1. Kyungpook National Univ. (Korea))

2023 International Conference on Solid State Devices and Materials |PDF Download

633 results (491 - 500)

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