Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[17a-301-1~12] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Mar 17, 2017 9:00 AM - 12:15 PM 301 (301)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[17a-301-1] Characterization of 4H-SiC Wafer and SiO2/SiC Using a Laser Terahertz Emission Microscope

Hidetoshi Nakanishi¹, 〇Tatsuhiko Nishimura¹, Katsuya Fujita¹, Fujikazu Kitamura¹, Minoru Mizubata¹, Iwao Kawayama², Masayoshi Tonouchi² (1.SCREEN, 2.ILE Osaka Univ.)

9:15 AM - 9:30 AM

[17a-301-2] Evaluation of Inhomogeneity of SiO₂/4H-SiC Interface by Conductive Atomic Force Microscopy and Scanning Nonlinear Dielectric Microscopy

〇Yuji Yamagishi¹, Norimichi Chinone¹, Yasuo Cho¹ (1.Res. Inst. of Electrical Commun., Tohoku Univ.)

9:30 AM - 9:45 AM

△ [17a-301-3] Observation of time constant dependence of interface trap distributions using local-DLTS based on scanning nonlinear dielectric microscopy

〇Norimichi Chinone¹, Ryoji Kosugi², Yasunori Tanaka², Shinsuke Harada², Hajime Okumura², Yasuo Cho¹ (1.Tohoku Univ., 2.AIST)

9:45 AM - 10:00 AM

[17a-301-4] First-Principles Molecular Dynamics Simulations of O₂ Oxidation in 4H-SiC/SiO₂
~Electronic Structures of C-related Defects at the Interface Region~

〇Takahiro Yamasaki^1,2, Nobuo Tajima^1,2, Tomoaki Kaneko^1,2, Jun Nara^1,2, Tatsuo Schimizu³, Koichi Kato⁴, Takahisa Ohno^1,2 (1.NIMS, 2.MARCEED, 3.Toshiba R&D Center, 4.IIS, Univ. of Tokyo)

10:00 AM - 10:15 AM

△ [17a-301-5] Thermal oxidation simulation of 4H-SiC by charge-transfer type molecular dynamics

〇(D)So Takamoto¹, Takahiro Yamasaki^2,3, Takahisa Ohno^2,3,4, Chioko Kaneta^3,5, Satoshi Izumi¹, Shinsuke Sakai¹ (1.Univ. of Tokyo, 2.NIMS, 3.MARCEED, 4.IIS, Univ. of Tokyo, 5.Fujitsu Lab.)

10:15 AM - 10:30 AM

△ [17a-301-6] Defect Formation in SiO₂ during the Thermal Oxidation of SiC

〇Kenta Chokawa¹, Masaaki Araidai^1,2, Kenji Shiraishi^1,2 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ.)

10:45 AM - 11:00 AM

[17a-301-7] Evaluation of Filled Defect States for SiO_2/4H-SiC grown by dry and N₂O oxidation

〇Hiromasa Watanabe¹, Akio Ohta¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Mori Daisuke², Yutaka Terao², Seiichi Miyazaki¹ (1.Nagoya Univ., 2.Fuji Electric Co., Ltd.)

11:00 AM - 11:15 AM

[17a-301-8] Oxidant concentration at SiO₂/SiC(000-1) Interface during wet oxidation.

〇Naoya Serizawa¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (1.Tsukuba Univ.)

11:15 AM - 11:30 AM

[17a-301-9] Improvement of I-V characteristics by annealing of the oxide films on SiC (000-1) thermally grown in H₂O ambient

〇(M1)Nozomu Iitsuka¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (1.Tsukuba Univ.)

11:30 AM - 11:45 AM

[17a-301-10] Impact of NO POA on leakage current conduction mechanism of thermally grown SiO2 for 4H-SiC C-face substrate

〇Yuji Kiuchi^1,2, Mitsuru Sometani¹, Dai Okamoto³, Tetsuo Hatakeyama¹, Shinsuke Harada¹, Hiroshi Yano³, Yoshiyuki Yonezawa¹, Hajime Okumura¹ (1.AIST, 2.New Japan Radio co., 3.Univ. Tsukuba)

11:45 AM - 12:00 PM

[17a-301-11] Anomalous behavior of gate current observed in FN stressed SiC-MOSFETs

Takafumi Furuichi¹, Yoshiki Mihara¹, Kazuki Masuguchi¹, 〇Eiichi Murakami¹ (1.Kyushu Sangyo Univ.)

12:00 PM - 12:15 PM

[17a-301-12] Substrate Effect on Insulating Characteristics of TEOS - CVD - SiO₂ Film

〇Hiroaki Kawamura¹, Kanta Maeda¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (1.Tsukuba Univ.)

Session information

[17a-301-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[17a-301-1] Characterization of 4H-SiC Wafer and SiO2/SiC Using a Laser Terahertz Emission Microscope

[17a-301-2] Evaluation of Inhomogeneity of SiO₂/4H-SiC Interface by Conductive Atomic Force Microscopy and Scanning Nonlinear Dielectric Microscopy

△ [17a-301-3] Observation of time constant dependence of interface trap distributions using local-DLTS based on scanning nonlinear dielectric microscopy

[17a-301-4] First-Principles Molecular Dynamics Simulations of O₂ Oxidation in 4H-SiC/SiO₂
~Electronic Structures of C-related Defects at the Interface Region~

△ [17a-301-5] Thermal oxidation simulation of 4H-SiC by charge-transfer type molecular dynamics

△ [17a-301-6] Defect Formation in SiO₂ during the Thermal Oxidation of SiC

[17a-301-7] Evaluation of Filled Defect States for SiO_2/4H-SiC grown by dry and N₂O oxidation

[17a-301-8] Oxidant concentration at SiO₂/SiC(000-1) Interface during wet oxidation.

[17a-301-9] Improvement of I-V characteristics by annealing of the oxide films on SiC (000-1) thermally grown in H₂O ambient

[17a-301-10] Impact of NO POA on leakage current conduction mechanism of thermally grown SiO2 for 4H-SiC C-face substrate

[17a-301-11] Anomalous behavior of gate current observed in FN stressed SiC-MOSFETs

[17a-301-12] Substrate Effect on Insulating Characteristics of TEOS - CVD - SiO₂ Film

Authentication

Session information

[17a-301-1~12] 15.6 Group IV Compound Semiconductors (SiC)

△ [17a-301-3] Observation of time constant dependence of interface trap distributions using local-DLTS based on scanning nonlinear dielectric microscopy

△ [17a-301-5] Thermal oxidation simulation of 4H-SiC by charge-transfer type molecular dynamics

△ [17a-301-6] Defect Formation in SiO2 during the Thermal Oxidation of SiC

Authentication

△ [17a-301-6] Defect Formation in SiO₂ during the Thermal Oxidation of SiC