[A-2-01 (Invited)] Ultralow-Power and Compact Nonvolatile Brain-Inspired VLSIs Based on CMOS/MTJ Hybrid Technology

^○T. Endoh¹, Y. Ma¹ (1.Tohoku Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 15:30 〜 16:00 |PDF ダウンロード

[A-2-02 (Invited)] Saving Energy Consumption of Memory Systems by Voltage-Control Spintronics Memory (VoCSM)

^○H. Yoda¹, Y. Ohsawa¹, Y. Kato¹, N. Shimomura¹, M. Shimizu¹, K. Koi¹, S. Shirotori¹, T. Inokuchi¹, H. Sugiyama¹, S. Oikawa¹, B. Altansargai¹, A. Kurobe¹ (1.Toshiba Corp. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 16:00 〜 16:30 |PDF ダウンロード

[A-2-03 (Invited)] Using (emerging) memories for machine learning hardware

^○D. Verkest¹, D. Rodopoulos¹, B. Verhoef¹, A. Mallik¹, J. Constantin¹, P. Debacker¹, J. Stuijt², R. Appeltans¹, D. Garbin¹, A. Mocuta¹, G.S. Kar¹, A. Furnemont¹ (1.IMEC (Belgium), 2.IMEC-NL (The Netherlands))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 16:30 〜 17:00 |PDF ダウンロード

[A-2-04 (Late News)] Time-resolved Conductance in Electrochemical Systems for Neuromorphic Computing

^○D.M. Bishop¹, P. Solomon¹, S. Kim¹, J. Tang¹, J. Tersoff¹, T. Todorov¹, M. Copel¹, J. Collins¹, K.T. Lee¹, S. Shin¹, Wilfried Haensch¹, John Rozen¹ (1.IBM Research (USA))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 17:00 〜 17:15 |PDF ダウンロード

[A-3-01] Study of Quantisation Accuracy Breakdown due to High Temperature and High Frequency in a Silicon Single-Electron Pump

^○N. Johnson¹, G. Yamahata¹, A. Fujiwara¹ (1.NTT Basic Research Labs (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 09:00 〜 09:15 |PDF ダウンロード

[A-3-02] Random-Telegraph-Noise and Wave-Particle Duality Found in a Silicon Nano-Wire

^○K. Ibukuro¹, L. Fayong¹, M.K. Husain¹, Z. Li¹, Y. Tsuchiya¹, H. Rutt¹, S. Saito¹ (1.Univ. of Southampton (UK))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 09:15 〜 09:30 |PDF ダウンロード

[A-3-03] Fabrications and transport properties of SiGe self-assembled quantum dots

^○M. Tanaka¹, K. Kawaguchi¹, H. Kiyama¹, M. Bamesreiter², D. Bougeard², A. Oiwa¹ (1.Osaka Univ. (Japan), 2.Univ. of Regensburg (Germany))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 09:30 〜 09:45 |PDF ダウンロード

[A-3-04] Size and Matrix-strain Effects on Ge Quantum Dots Light Emission

^○S.H. Chiu¹, C.W. Tien¹, S.D. Lin¹, W.H. Chang¹, H.C. Lin¹, P.W. Li¹ (1.National Chiao Tung Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 09:45 〜 10:00 |PDF ダウンロード

[A-3-05] Room Temperature High Peak-to-valley Current Ratio of CaF₂/Si Triple-barrier Resonant-tunneling Diode Grown on Si

^○H. Tonegawa¹, Y. Kumagai¹, S. Fukuyama¹, K. Hirose¹, M. Watanabe¹ (1.Tokyo Tech (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 10:00 〜 10:15 |PDF ダウンロード

[A-3-06 (Late News)] Quantum Antidot with Fully and Partially Depleted Regions in the Quantum Hall Regime

^○H. Aramaki¹, R. Eguchi¹, E. Kamata¹, T. Fujisawa¹ (1.Tokyo Tech (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 10:15 〜 10:30 |PDF ダウンロード