[PS-1-17] Steep Switching Less Than 15 mV/decade in Silicon-on-Insulator Tunnel FETs by Trimmed-Gate Structure
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)
922件中(431 - 440)
[PS-1-18] High Performance NiGe/n-Ge Junctions and pMOSFETs Fabricated with Dopant Segregation
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)
[PS-1-19] Back Gate Modulation of Ultra-Thin-Body InGaAs-OI nMOSFET
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)
[PS-1-20] Impact of Ge Fraction to Bulk Resistivity and Work Function of NiSiGe Alloys
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)
[PS-1-21] Improved Conductance Method for Interface Trap Density of ZrO2-Si interface
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)
[PS-1-22] Time-Dependent Selective Oxidation by Low Pressure Oxidation on High-Ge-Content SiGe
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)
[PS-1-23] Identification of different gas-phase reaction modes of WF6 with SiH4 for deposition of WSin films: powder formation and WSin cluster synthesis
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)
[PS-1-24] Improvement of Interface Properties of Ge-MISFET with Crystalline La2O3 high-k/Ge(111) Gate Stacks by Wet Treatments
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)
[PS-1-25] A Study of Interfacial Layer Quality and Thermal Stability of HfO2/SiGe Gate Stack by Using NH3 Plasma Treatment
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)
[PS-1-26 (Late News)] Read Static Noise Margin Fluctuation Induced by Various Random Discrete Dopants on 6T SRAM with Nanowire FET (NWFET) and Hybrid FinFET-NWFET Cells
2018 International Conference on Solid State Devices and Materials
|2018年9月12日(水)