[PS-2-15] Ge Surface Channel Formed by Different Temperature Processes on Characteristics of Poly-Si Charge-Trapping Flash Memory Devices

^○C.C. Su¹, K.S. Chang-Liao¹, H.K. Fang¹, Y.C. Yu¹, W.H. Huang², C.H. Shen², J.M. Hsieh² (1.National Tsing Hua University (Taiwan), 2.National Nano Device Laboratories (Taiwan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-2-16 (Late News)] Printed Flexible Resistive Switching Memory

^○A. Alastalo¹, K. Eiroma¹, M. Suhonen¹, D. Chu², S. Li² (1.VTT Technical Research Centre of Finland (Finland), 2.Univ. of New South Wales (Australia))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-2-17 (Late News)] Macro-model of Phase-Change Material (PCM) Device Used for H-spice Simulation

^○C. Li¹, J. Choi¹, Y.H. Song¹ (1.Hanyang Univ. (Korea))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-2-18 (Late News)] Analysis of Natural Local Self-Boosting Effect due to Down-coupling Phenomenon in 3D NAND Flash Memory

^○Y.S. Jeong¹, G.H. Lee¹, J.W. Jeon², H.S. Jhon³, Y. Kim⁴, M.G. Kang¹ (1.Korea National Univ. of Transportation (Korea), 2.Konkuk Univ. Seoul, Korea (Korea), 3.Mokpo National Univ. (Korea), 4.Pusan National Univ. (Korea))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-2-19 (Late News)] Gate-Tuning of Synaptic Functions Based on The Oxygen Vacancy Distribution Control in Four-Terminal TiO_2-x Memristive Devices

^○Z. Nagata¹, T. Shimizu¹, T. Isaka¹, T. Tohei¹, A. Sakai¹ (1.Osaka Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-3-01] [No-Show]A 1:16 DEMUX in InP-on-Si CMOS Technology

^○L.S. Wu¹, Y.T. Zhang¹, W. Cheng¹, Y.C. Kong¹, T.S. Chen¹ (1.Inst. of Nanjing Electronic Devices (China))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30

[PS-3-02] A Simple Methodology of On-Chip Transmission Line Modeling for High Speed Clock Distribution

^○M. Ichihashi¹, H. Kanaya¹ (1.Kyushu Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-3-03] Characterization of TiN films sputter-deposited at low temperatures

^○M. Sato¹, H. Kitada¹, M.B. Takeyama¹ (1.Kitami Inst. of Tech. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-3-04] Crystallinity Dependence of the Strength of electroplated gold thin films Used for Three-Dimensional Electronic Packaging

^○K. Suzuki¹, Y. Nakoshi¹, H. Miura¹ (1.Tohoku University (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-3-05] 4-Terminal Lateral MEMS Silicon Relay with Nanocrystalline Graphite Contact and Polymer Insulating/Mechanical Coupler

^○J.D. Reynolds¹, S. Rana², J. Mouro², D. Pamunuwa², H. Chong¹ (1.Univ. of Southampton (UK), 2.Univ. of Bristol (UK))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード