[D-6-05] Room-Temperature Valley-Polarized Light-Emitting Devices via Strained Monolayer Semiconductors
2019 International Conference on Solid State Devices and Materials
|Thu. Sep 5, 2019
779 results (111 - 120)
[D-6-06] Controlling Color Conversion Efficiency between Monolayer Tungsten Diselenide and Quantum Dots through Plasmonic Effect of Silver Nanodisks Metasurface
2019 International Conference on Solid State Devices and Materials
|Thu. Sep 5, 2019
[E-1-01 (Invited)] Engineering superconducting quantum circuits
2019 International Conference on Solid State Devices and Materials
|Tue. Sep 3, 2019
[E-1-02] Spin-charge separation of fractionally charged excitations studied with current noise measurement
2019 International Conference on Solid State Devices and Materials
|Tue. Sep 3, 2019
[E-1-03] Bipolar Pauli spin blockade in a silicon linearly coupled triple quantum dot
2019 International Conference on Solid State Devices and Materials
|Tue. Sep 3, 2019
[E-1-04] Selective quantum teleportation transfer of a photon polarization state into a carbon nuclear spin state in an NV center in diamond
2019 International Conference on Solid State Devices and Materials
|Tue. Sep 3, 2019
[E-1-05 (Late News)] Quantum annealing with spin lock technique
2019 International Conference on Solid State Devices and Materials
|Tue. Sep 3, 2019
[E-2-01 (Invited)] 300 mm silicon quantum computing:A Silicon-Based Platform for Quantum Computing Device Technologies
2019 International Conference on Solid State Devices and Materials
|Tue. Sep 3, 2019
[E-2-02] Pauli spin blockade in a silicon triangular triple quantum dot
2019 International Conference on Solid State Devices and Materials
|Tue. Sep 3, 2019
[E-2-03] Gating function of p-channel silicon quantum dots by offset bias
2019 International Conference on Solid State Devices and Materials
|Tue. Sep 3, 2019