[PS-4-22] Observation of Slow Carrier Recombination in p-type GaN Epilayers on GaN Substrates

^○S. Zhu¹, K. Ito², K. Tomita², T. Narita², T. Kachi³, M. Kato^1,3 (1.Nagoya Inst. of Tech. (Japan), 2.Toyota Central R&D Labs. (Japan), 3.Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 11:27 〜 11:29 |PDF ダウンロード

[PS-4-23] Effect of Post-metallization Annealing on Interface Properties of Al₂O₃/GaN Fabricated on c- and m-plane Free-standing GaN Substrates

^○Y. Ando¹, T. Nakamura², M. Deki², N. Taoka¹, A. Tanaka^2,3, H. Watanabe², M. Kushimoto¹, S. Nitta², Y. Honda², H. Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ. (Japan), 2.IMaSS, Nagoya Univ. (Japan), 3.NIMS (Japan), 4.ARC, Nagoya Univ. (Japan), 5.VBL, Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 11:29 〜 11:31 |PDF ダウンロード

[PS-4-24] InGaAs/InAlAs HEMT Terahertz Detector Integrated with Patch Antenna

^○S. Suzuki¹, T. Otsuka¹, Y. Ueda¹ (1.Tokyo Tech (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 11:31 〜 11:33 |PDF ダウンロード

[PS-4-25 (Late News)] Demonstration of m-plane GaN metal-oxide-semiconductor field-effect transistors

^○H. Okumura¹, T. Takahashi², M. Shimizu² (1.Univ. of Tsukuba (Japan), 2.AIST (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 11:33 〜 11:35 |PDF ダウンロード

[PS-4-26 (Late News)] Modeling of the Leakage Current in GaN mediated through the Dislocation-Impurity Complex

^○Y. Harashima¹, T. Nakano², A. Oshiyama¹, K. Shiraishi^1,2 (1.IMaSS, Nagoya Univ. (Japan), 2.Department of Eng., Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 11:35 〜 11:37 |PDF ダウンロード

[PS-4-27 (Late News)] High current turn-off capability testing of a 3.3 kV SiC-MOSFET

^○K. Takao¹, T. Sakano¹, Y. Hayashi¹, S. Hongliang¹ (1.Toshiba Corporation (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 11:37 〜 11:39 |PDF ダウンロード

[PS-4-28 (Late News)] Demonstration of n-MOSFET operation and internal charge analysis of SiO₂/Al₂O₃ gate dielectric on (111) oriented 3C-SiC

^○R. Oka¹, K. Yamamoto¹, D. Wang¹, H. Nakashima¹, S. Hishiki², K. Kawamura² (1.Kyushu Univ. (Japan), 2.Air Water Inc. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 11:39 〜 11:41 |PDF ダウンロード

[PS-4-29 (Late News)] Cumulative Effects of Gamma Irradiation on Oxide Traps and Interface States in SiC MOS Capacitor

^○Y.-X. Lin¹, D.-S. Chao², J.-H. Liang^1,3, J.-Y. Jiang⁴, C.-F. Huang⁴ (1.Department of Eng. and System Sci., National Tsing Hua Univ. (Taiwan), 2.Nuclear Sci. and Tech. Development Center, National Tsing Hua Univ. (Taiwan), 3.Inst. of Nuclear Eng. and Sci., National Tsing Hua Univ. (Taiwan), 4.Inst. of Electronics Eng., National Tsing Hua Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 11:41 〜 11:43 |PDF ダウンロード

[PS-4-30 (Late News)] Temperature Dependence of Diamond MOSFET Transport Properties

^○A. Traore^1,2, H. Kato², T. Makino^1,2, T. Matsumoto³, N. Tokuda³, M. Ogura², Y. Kato², D. Takeuchi², S. Yamasaki² (1.Univ. of Tsukuba (Japan), 2.AIST (Japan), 3.Kanazawa Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 11:43 〜 11:45 |PDF ダウンロード

[PS-5-01] Numerical analysis of waveguide-integrated graphene thermal emitter

^○H. Tang¹, S. Takagi¹, M. Takenaka¹ (1.Univ. of Tokyo (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 10:45 〜 10:47 |PDF ダウンロード