The Japan Society of Applied Physics

2019 International Conference on Solid State Devices and Materials

2019 International Conference on Solid State Devices and Materials

Sep 2, 2019 - Sep 5, 2019
Nagoya University

779 results (611 - 620)

[PS-4-23] Effect of Post-metallization Annealing on Interface Properties of Al2O3/GaN Fabricated on c- and m-plane Free-standing GaN Substrates

○Y. Ando1, T. Nakamura2, M. Deki2, N. Taoka1, A. Tanaka2,3, H. Watanabe2, M. Kushimoto1, S. Nitta2, Y. Honda2, H. Amano2,3,4,5 (1.Dept. of Electronics, Nagoya Univ. (Japan), 2.IMaSS, Nagoya Univ. (Japan), 3.NIMS (Japan), 4.ARC, Nagoya Univ. (Japan), 5.VBL, Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 1:00 PM - 3:00 PM |PDF Download

[PS-4-29 (Late News)] Cumulative Effects of Gamma Irradiation on Oxide Traps and Interface States in SiC MOS Capacitor

○Y.-X. Lin1, D.-S. Chao2, J.-H. Liang1,3, J.-Y. Jiang4, C.-F. Huang4 (1.Department of Eng. and System Sci., National Tsing Hua Univ. (Taiwan), 2.Nuclear Sci. and Tech. Development Center, National Tsing Hua Univ. (Taiwan), 3.Inst. of Nuclear Eng. and Sci., National Tsing Hua Univ. (Taiwan), 4.Inst. of Electronics Eng., National Tsing Hua Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 1:00 PM - 3:00 PM |PDF Download

[PS-5-02] Withdrawn

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 1:00 PM - 3:00 PM

779 results (611 - 620)