[B-3-4] High Quality CVD/Thermal Stacked Gate Oxide Films with Hydrogen-Free CVD SiO2 Formed in the SiCl4-N2O System

T. Ogata、K. Kobayashi、H. Watanabe、H. Kurokawa、Y. Matsui、M. Hirayama (1.ULSI Laboratory, Mitsubishi Electric Corporation、2.Advanced Technology R&D Center, Mitsubishi Electric Corporation)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-5] Impact of Nitrogen Distribution in Oxynitride Tunnel Film/Si on Band-to-Band Tunneling Current and Electron Injection in Flash Memory

T. Arakawa、R. Matsumoto、T. Hayashi (1.VLSI Research & Development Center and LSI Process Technology Division Oki Electric Industry Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-1] Hole Trapping Due to Impurities in Amorphous Silicon Dioxide

Chioko KANETA (1.Fujitsu Laboratories Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-2] Early Stages of Oxidation of Clean Si(111)-7x7 and Si(100)-2x1 Surfaces Studied by In-Situ High Resolution X-Ray Photoelectron Spectroscopy

Josep L. ALAY、Masataka HIROSE (1.Research Center for Nanodevices and Systems, Hiroshima University、2.Department of Electrical Engineering, Hiroshima University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-3] Diffusion of Carbon in SiO2 Films and Its Segregation at Si/SiO2 Interface

I. Mizushima、H. Kamiya、N. Arai、M. Sonoda、M. Yoshiki、S. Takagi、M. Wakamiya、S. Kambayashi、Y. Mikata、S. Mori、M. Kashiwagi (1.Microelectronics Engineering Laboratory, Semiconductor Manufacturing Engineering Center, R&D Center, Toshiba Corporation、2.Toshiba Microelectronics Corporation)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-4] Significant Effect of OH inside Silicon Chemical Oxides on AHF(Anhydrous Hydrofluoric Acid) Etching

Kouichi MURAOKA、Iwao KUNISHIMA、Nobuo HAYASAKA、Shin-ichi TAKAGI (1.ULSI Research Laboratories, TOSHIBA Corporation)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-1] Device Characteristics and Reliability of Thin Gate Dielectrics Grown by Light Wet Oxynitridation(LWO)

Moon-Sig Joo、Seok-Kiu Lee、Young-Jin Park、Jong-Choul Kim (1.Memory R&D Division, Hyundai Electronics Industries Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-2] Single Crystalline Silicon Floating Gate Technology for Sub-10 nm Interelectrode Dielectrics

Shigehiko Saida、Yuuichirou Mitani、Hiroaki Hazama、Shigeru Kammbayashi、Ichiro Mizushima、Jun-ichi Shiozawa、Yoshio Ozawa (1.Microelectronics Engineering Laboratory and ULSI Research Laboratories Toshiba Corp.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-3] Field Acceleration Model for Time-Dependent Dielectric Breakdown

Mikihiro KIMURA、Hiroshi KOYAMA、Akihiko YASUOKA (1.ULSI Laboratory, Mitsubishi Electric Corporation)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-4] Reliability of Ultra-Thin Gate Oxides Below 3 nm in the Direct Tunneling Regime

Michel Depas、Robin Degraeve、Tanya Nigam、Guido Groeseneken、Marc Heyns (1.IMEC)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード