We-1: Oxide

△ [We1-3] Relation between propagation angle of dislocations in β-Ga₂O₃ (001) bulk wafer and their etch pit shapes

*Sou Isaji¹, Issei Maeda¹, Naoya Ogawa¹, Ryo Kosaka¹, Noriyuki Hasuike¹, Toshiyuki Isshiki¹, Kenji Kobayashi², Yongzhao Yao³, Yukari Ishikawa³ (1. Kyoto Institute of Technology, 2. Hitachi High-Tech Corp., 3. Japan Fine Ceramics Center)