Session information

Oral presentation

13. Semiconductors A (Silicon) » 13.3 Insulator technology

[17p-B5-1~21] 13.3 Insulator technology

Tue. Sep 17, 2013 1:00 PM - 6:30 PM B5 (TC2 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch (12:00 PM - 1:00 PM)

1:00 PM - 1:15 PM

[17p-B5-1] Synthesis of SrHfO₃ Perovskite Thin Films on Si Substrates

^○Shinji Migita¹, Yukinori Morita¹, Meishoku Masahara¹, Hiroyuki Ota¹ (AIST GNC¹)

1:15 PM - 1:30 PM

△ [17p-B5-2] Stabilization Mechanisms of Meta-Stable Tetragonal ZrO₂ Crystalline Phase

^○Kimihiko Kato¹, Takatoshi Saito¹, Mitsuo Sakashita¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Grad. School Eng., Nagoya Univ.¹)

1:30 PM - 1:45 PM

[17p-B5-3] Dipole Layer Formation at Al₂O₃/SiO₂ Interface Reproduced by Molecular Dynamics Simulation

^○Ryo Kuriyama¹, Masahiro Hashiguchi¹, Ryusuke Takahashi¹, Atsushi Ogura^3,5, Shinichi Satoh^4,5, Takanobu Watanabe^1,2,5 (Waseda Univ.¹, Waseda-INN², Meiji Univ.³, University of Hyogo⁴, JST-CREST⁵)

1:45 PM - 2:00 PM

[17p-B5-4] Electrostatic filed in channel induced by the dipole layer at Al₂O₃/SiO₂ interface

^○Masahiro Hashiguchi¹, Ryo Kuriyama¹, Ryusuke Takahashi¹, Atsushi Ogura^3,5, Shinichi Satoh^4,5, Takanobu Watanabe^1,2,5 (Waseda Univ¹, Waseda-INN², Meiji Univ³, University of Hyogo⁴, JST-CREST⁵)

2:00 PM - 2:15 PM

[17p-B5-5] Reliability of La-silicate gate Capacitor with tungsten gate electrode

^○Yoshinori Nakamura¹, Shuhei Hosoda¹, Kamale Tuokedaerhan¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Hitoshi Wakabayashi², Nobuyuki Sugii², Kazuo Tsutsui², Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

2:15 PM - 2:30 PM

[17p-B5-6] Electrical properties of ultra thin polycrystalline HfO2 film with very small electrode area

^○Yusuke Tomura¹, Ryu Hasunuma¹, Kikuo Yamabe¹, Shinji Migita² (University of Tsukuba¹, AIST NRI²)

2:30 PM - 2:45 PM

[17p-B5-7] Dielectric Properties of Thick Polycrystalline HfO₂ films

^○Mariko Hayashi¹, Hisanori Momma¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (Univ. of Tsukuba¹)

2:45 PM - 3:00 PM

△ [17p-B5-8] Investigation of EOT scaling of HfO₂/Al₂O₃/SiGe gate stack by plasma post-nitridation

^○(M2C)Jaehoon Han¹, Rui Zhang¹, Takenori Osada², Masahiko Hata², Mitsuru Takenaka¹, Shinichi Takagi¹ (Univ. of Tokyo¹, Sumitomo Chemical Co. Ltd.²)

3:00 PM - 3:15 PM

▲ [17p-B5-9] Investigation of the Substrate Orientation-Dependent on the Electrical Characteristics of HfN Gate Insulator Formed by ECR Plasma Sputtering

^○Nithi Atthi¹, Dae-Hee Han¹, Huiseong Han¹, Shun-ichiro Ohmi¹ (Tokyo Inst. of Tech., Interdisciplinary graduate school of science and engineering¹)

Break (3:15 PM - 3:30 PM)

3:30 PM - 3:45 PM

▲ [17p-B5-10] [Young Scientist Oral Presentation Award Speech](15 min.) Oxygen Potential Lowering in N-doped GeO₂ for Ge MIS Gate Stack Design in Extremely Thin EOT Region

^○Toshiyuki Tabata^1,2, Choong Hyun Lee^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (Univesity of Tokyo¹, JST-CREST²)

3:45 PM - 4:00 PM

▲ [17p-B5-11] Atomically Flat Planarization of Ge (110) and (100) Surface by H2 Annealing

^○Tomonori Nishimura^1,2, Takeaki Yajima^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (The Univ. of Tokyo¹, JST-CREST²)

4:00 PM - 4:15 PM

[17p-B5-12] Fabirication and Evaluation of GeO₂/Ge structure Using Kr/O₂ Plasma Oxidation

^○Yuya Nakatani¹, Marina Yamaguchi¹, Yoshiki Iwasaki¹, Tomo Ueno¹ (Tokyo Univ. of Agri. & Tech.¹)

4:15 PM - 4:30 PM

△ [17p-B5-13] Control of Structure of GeO_x Thin Film Using Low-Temperature and Damage-Free Neutral-Beam Oxidation Process

^○Daiki Nakayama¹, Takeo Ohno², Rui Zhang³, Shinichi Takagi³, Seiji Samukawa^1,2 (IFS, Tohoku Univ.¹, WPI-AIMR, Tohoku Univ.², Univ. of Tokyo³)

4:30 PM - 4:45 PM

△ [17p-B5-14] Metal and Insulator HfN_x films for Ge MIS structure by controlling nitrogen composition

^○(M2)Shu Miura¹, Masatoshi Tanaka¹, Tetsuji Yasuda², Tatsuro Maeda² (Yokohama National Univ.¹, AIST²)

4:45 PM - 5:00 PM

[17p-B5-15] Inspection of Introduction Al₂O₃ Film to Decrease Leak Current

^○Yohma Kuroyanagi¹, Yuya Nakatani¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (Tokyo Univ.of Agri.&Tech.¹)

5:00 PM - 5:15 PM

[17p-B5-16] Improvement of Electric Properties of GeO₂ /Ge Structures Using Post Metallization Annealing

^○Marina Yamaguchi¹, Yuya Nakatani¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (Tokyo Univ. of Agri. & Tech.¹)

5:15 PM - 5:30 PM

△ [17p-B5-17] High-k/Ge Gate Stack with an EOT of 0.56 nm by Controlling High-k/Ge Interface Reaction Using Ultrathin AlO_x Interlayer

^○Ryohei Tanaka¹, Iori Hideshima¹, Yuya Minoura¹, Akitaka Yoshigoe², Yuden Teraoka², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹, JAEA²)

5:30 PM - 5:45 PM

[17p-B5-18] Control of Al₂O₃/Ge Interface Structure Based on Mechanism of Interface Reaction

^○Shigehisa Shibayama^1,2, Kimihiko Kato¹, Mitsuo Sakashita¹, Wakana Takeuchi¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Naogya Univ.¹, JSPS Research Fellow²)

5:45 PM - 6:00 PM

▼ [17p-B5-19] Influence of Yttrium concentration on the oxidation barrier effect of Y-doped GeO2 interfacial layer

^○Cimang Lu^1,2, Choong Hyun Lee^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (The Univ. of Tokyo¹, JST-CREST²)

6:00 PM - 6:15 PM

▲ [17p-B5-20] Suppression of Surface States inside Conduction Band and Effective Mobility Improvement of Ge nMOSFETs by Atomic Deuterium Annealing

^○Rui Zhang¹, Ju-Chin Lin¹, Xiao Yu¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (Univ. Tokyo¹)

6:15 PM - 6:30 PM

▲ [17p-B5-21] Significant Enhancement of High-Ns electron mobility in Ge n-MOSFETs

^○ChoongHyun Lee^1,2, Cimang Lu^1,2, Toshiyuki Tabata^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (The Univ. of Tokyo¹, JST-CREST²)

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