Poster presentation

[19a-P8-1~16] 15.3 III-V-group epitaxial crystals

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P8 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[19a-P8-1] Luminescence characteristic of GaInAs QDs by intermittent supply of Ga using MOVPE

^○Masayuki Yamauchi¹, Shohei Yoshikawa¹, Yuta Yamamoto¹, Kazuhiko Shimomura¹ (Sophia Univ.¹)

9:30 AM - 11:30 AM

[19a-P8-2] Long wavelength luminescence of InAs/InP QDs with ternary or quarternary capping layer

^○Yuta Yamamoto¹, Masayuki Yamauchi¹, Shohei Yoshikawa¹, Toshiki Sukigara¹, Kazuhiko Shimomura¹ (Sophia Univ.¹)

9:30 AM - 11:30 AM

[19a-P8-3] Extended emission wavelength of bilayer InAs-QDs on a GaAs substrate (III)

^○(M2)Yohei Nakatani¹, Nobuhiko Ozaki¹, Syunsuke Ohkouchi², Naoki Ikeda³, Yoshimasa Sugimoto³, Edmund Clarke⁴, Richard Hogg⁴ (Wakayama Univ.¹, NEC Corp.², NIMS³, U.Sheffield⁴)

9:30 AM - 11:30 AM

[19a-P8-4] Broadband near-infrared SLD based on stacked multi-color InAs/GaAs quantum dots

^○(M1)Takuma Yasuda¹, Nobuhiko Ozaki¹, Shunsuke Ohkouchi², Naoki Ikeda³, Eiichiro Watanabe³, Yoshimasa Sugimoto³, Richard Hogg⁴ (Wakayama Univ.¹, NEC Corp.², NIMS³, Univ. Sheffield⁴)

9:30 AM - 11:30 AM

[19a-P8-5] Junction capacitance of C₆₀ doped GaAs diodes grown by MBE

^○Jiro Nishinaga¹, Yoshiji Horikoshi¹ (Waseda Univ.¹)

9:30 AM - 11:30 AM

[19a-P8-6] X-ray reflectivity measurements of coupled double quantum wells

^○Shin-ichiro Gozu¹, Teruo Mozume¹, Hitoshi Kawashima¹ (AIST¹)

9:30 AM - 11:30 AM

[19a-P8-7] Growth of InSb films on a Si(100) substrate formed V-grooves with (111) planes

^○(M1)Hiroya Shimoyama¹, Masayuki Mori¹, Koichi Maezawa¹ (Univ. of TOYAMA¹)

9:30 AM - 11:30 AM

[19a-P8-8] Growth of Strain-Relaxed InGaAs on GaAs(111)A

^○Neul Ha^1,2, Andrea Castellano¹, Takaaki Mano¹, Akihiro Ohtake¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹, Takashi Kuroda^1,2 (NIMS¹, Kyushu Univ.²)

9:30 AM - 11:30 AM

[19a-P8-9] First Principle Study on the Conduction Band Electron States of GaAsN alloys

^○Kei Sakamoto¹, Hiroyuki Yaguchi¹ (Saitama Univ.¹)

9:30 AM - 11:30 AM

[19a-P8-10] RHEED Analysis for the formation process of Nitrogen δ-doped layer on GaAs（001）(3)

^○Norihisa Nishimoto¹, Masahiko Kondow¹, Fumitaro Ishikawa² (Osaka Univ.¹, Ehime Univ.²)

9:30 AM - 11:30 AM

[19a-P8-11] Time-resolved photoluminescence of biexciton emission from individual isoelectronic traps in N δ-doped GaAs

^○Kengo Takamiya¹, Shuhei Yagi¹, Yasuto Hijikata¹, Toshimitsu Mochizuki², Masahiro Yoshita², Hidefumi Akiyama², Shigeyuki Kuboya³, Ryuji Katayama³, Kentaro Onabe⁴, Hiroyuki Yaguchi¹ (Saitama Univ.¹, ISSP², IMR Tohoku Univ.³, Univ. of Tokyo⁴)

9:30 AM - 11:30 AM

[19a-P8-12] PL wavelength shift observed from GaInAs/InP MQW structure grown on directly-bonded InP/Si substrate using selective MOVPE

^○Keiichi Matsumoto¹, Xinxin Zhang¹, Yoshinori Kanaya¹, Kazuhiko Shimomura¹ (Sophia Univ.¹)

9:30 AM - 11:30 AM

[19a-P8-13] Effect of laser irradiation on the luminescence efficiency of GaInNAs quantum wells

^○Takuya Iwasaki¹, Shuhei Yagi¹, Yasuto Hijikata¹, Hiroyuki Yaguchi¹, Osamu Ueda² (Saitama Univ.¹, KIT²)

9:30 AM - 11:30 AM

[19a-P8-14] Excitation power dependence of the luminescence from GaAsN/GaAs quantum well structures

^○Yasuyuki Yamazaki¹, Shuhei Yagi¹, Yasuto Hijikata¹, Kentaro Onabe², Hiroyuki Yaguchi¹ (Saitama Univ.¹, The Univ. of Tokyo²)

9:30 AM - 11:30 AM

▲ [19a-P8-15] Relationship between ionized acceptors density and hole traps in p-type GaAsN grown by chemical beam epitaxy

^○Elleuch Omar¹, Bouzazi Boussairi¹, Kowaki Hiroyuki¹, Ikeda Kazuma¹, Kojima Nobuaki¹, Ohshita Yoshio¹, Yamaguchi Masafumi¹ (Toyota Tech. Inst.¹)

9:30 AM - 11:30 AM

[19a-P8-16] Interfacial electrical characteristics of directly-bonded InP/Si substrate for GaInAsP system growth

^○Yoshinori Kanaya¹, Keiichi Matsumoto¹, Xinxin Zhang¹, Kazuhiko Shimomura¹ (Sophia Univ.¹)

Oral presentation

[19p-D3-1~18] 15.3 III-V-group epitaxial crystals

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D3 (MK 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:00 PM - 1:15 PM

△ [19p-D3-1] MOCVD growth of high-hole-concentration InGaAsSb for low-turn-on-voltage DHBTs

^○Takuya Hoshi¹, Hiroki Sugiyama¹, Haruki Yokoyama¹, Hideaki Matsuzaki¹, Masaki Kohtoku¹ (NTT Photonics Labs.¹)

1:15 PM - 1:30 PM

[19p-D3-2] Band diagram difference between InSb and InAsSb Quantum wells

^○Takashi Manago¹, Syuichi Ishida², Hirotaka Geka³, Ichiro Shibasaki⁴ (Fukuoka Univ.¹, Tokyo Univ. Sci. Yamaguchi², Asahi Kasei Co.³, Noguchi Inst.⁴)

1:30 PM - 1:45 PM

[19p-D3-3] EL properties of InGaAsN/GaAsSb quantum well diodes grown on InP substrates

Toru Sahasi¹, ^○Yuichi Kawamura¹ (Osaka Prefecture University¹)

1:45 PM - 2:00 PM

[19p-D3-4] The analysis of recombination process via the hole trap in GaAsN grown by Chemical Beam Epitaxy

^○Hiroyuki Kowaki¹, Bouzazi Boussairi¹, Kazuma Ikeda¹, Nobuaki Kojima¹, Yoshio Ohshita¹, Masafumi Yamaguchi¹ (Toyota Technological Institute¹)

2:00 PM - 2:15 PM

△ [19p-D3-5] Evaluation of N and As duration by Raman spevtroscopy in GaAsN thin film growth using the atomic layer epitaxy

^○(M1)Shoma Goto¹, Koji Maeda¹, Tetsuo Ikari¹, Hidetoshi Suzuki², Toshihiro Yamauchi², Tomohiro Haraguchi¹ (Faculy of Engineering,Univ Miyazaki¹, IRO,Univ.Miyazaki²)

2:15 PM - 2:30 PM

[19p-D3-6] Annealing effect on ultra-high-Q micromechanical resonators using strained GaNAs

^○Koji Onomitsu¹, Manabu Mitsuhara², Yoshiharu Krockenberger¹, Hideki Yamamoto¹, Hiroshi Yamaguchi¹ (NTT BRL¹, NTT Photonics Labs.²)

2:30 PM - 2:45 PM

[19p-D3-7] In-plane structural anisotropy in strained InGaP/InGaP MQWs grown on GaAs

^○Manabu Mitsuhara¹, Noriyuki Watanabe¹, Haruki Yokoyama¹, Naoteru Shigekawa² (NTT Photonics Labs.¹, Osaka City Univ.²)

2:45 PM - 3:00 PM

[19p-D3-8] Observation of rapid strain relaxation during metamorphic InGaAs/GaAs growth

^○Takuo Sasaki¹, Masamitu Takahasi¹, Hidetoshi Suzuki², Yoshio Ohshita³, Masafumi Yamaguchi³ (JAEA¹, IRO, Univ. of Miyazaki², Toyota Tech. Inst.³)

Break （3:00 PM - 3:15 PM）

3:15 PM - 3:30 PM

[19p-D3-9] Effects of surface reconstructions on the formation of Ga droplets on GaAs(001)

^○Akihiro Ohtake¹, Takaaki Mano¹ (NIMS¹)

3:30 PM - 3:45 PM

[19p-D3-10] Droplet epitaxy of InAs quantum dots on InP(111)A substrates

^○Takeshi Noda¹, Takaaki Mano¹, Takuya Kawazu¹, Hiroyuki Sakaki^1,2 (NIMS¹, TTI²)

3:45 PM - 4:00 PM

[19p-D3-11] Scaling function by quantum dot growth model with 2 species of diffusion atoms

^○(M1)Ryo Yamauchi¹, Xiangmeng Lu¹, Masataka Koyama¹, Hirotaka Sasakura¹, Shunichi Muto¹ (Hokkaido Univ.¹)

4:00 PM - 4:15 PM

[19p-D3-12] In situ XRD observation during capping of InAs quantum dots

^○Kenichi Shimomura¹, Hidetoshi Suzuki², Takuo Sasaki³, Masamitu Takahasi³, Yoshio Ohshita¹, Itaru Kamiya¹ (Toyota Tech. Inst.¹, IRO, Univ. Miyazaki², JAEA³)

4:15 PM - 4:30 PM

[19p-D3-13] 1.5μm surface emission of InAs QDs embedded by GaAs strain relaxed layer with nanoholes (2)

^○Hiroyuki Yamashita¹, Yuta Takahashi¹, Kouiti Yamaguti¹ (Univ. of Electro-Communications¹)

4:30 PM - 4:45 PM

[19p-D3-14] Polarization insensitive emission from closely-stacked InAs /GaAs quantum dots

^○Masaya Suwa¹, Takaya Andachi¹, Takuya Matsumura¹, Takashi Kita¹ (Kobe univ.¹)

4:45 PM - 5:00 PM

[19p-D3-15] Polarization spectral gain feature of semiconductor optical amplifier using closely stacked InAs/GaAs quantum dot

^○Takaya Andachi¹, Masaya Suwa¹, Takuya Matsumura¹, Takashi Kita¹ (Kobe univ.¹)

5:00 PM - 5:15 PM

[19p-D3-16] Selective excitation PL properties of ultrahigh-density InAs QD on GaAsSb buffer layer

^○Miyuki Shiokawa¹, Koichi Yamaguchi¹ (Univ. of Electro-Communications¹)

5:15 PM - 5:30 PM

▼ [19p-D3-17] Two-Step Photocurrent Generation in Droplet Epitaxy GaAs/AlGaAs QD-IBSCs

^○(PC)Martin Elborg¹, Takeshi Noda¹, Takaaki Mano¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹, Liyuan Han^1,2 (National Institute for Materials Science¹, University of Tsukuba²)

5:30 PM - 5:45 PM

[19p-D3-18] Formation of GaInAs quantum dots on GaP Substrate by MOCVD

^○(M2)Fumiya Hoshino¹, Toshihiro Furukawa¹, Shohei Oshida¹, Tomoyuki Miyamoto¹ (Tokyo Tech¹)

Sessions

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[19a-P8-1~16] 15.3 III-V-group epitaxial crystals

[19a-P8-1] Luminescence characteristic of GaInAs QDs by intermittent supply of Ga using MOVPE

[19a-P8-2] Long wavelength luminescence of InAs/InP QDs with ternary or quarternary capping layer

[19a-P8-3] Extended emission wavelength of bilayer InAs-QDs on a GaAs substrate (III)

[19a-P8-4] Broadband near-infrared SLD based on stacked multi-color InAs/GaAs quantum dots

[19a-P8-5] Junction capacitance of C₆₀ doped GaAs diodes grown by MBE

[19a-P8-6] X-ray reflectivity measurements of coupled double quantum wells

[19a-P8-7] Growth of InSb films on a Si(100) substrate formed V-grooves with (111) planes

[19a-P8-8] Growth of Strain-Relaxed InGaAs on GaAs(111)A

[19a-P8-9] First Principle Study on the Conduction Band Electron States of GaAsN alloys

[19a-P8-10] RHEED Analysis for the formation process of Nitrogen δ-doped layer on GaAs（001）(3)

[19a-P8-11] Time-resolved photoluminescence of biexciton emission from individual isoelectronic traps in N δ-doped GaAs

[19a-P8-12] PL wavelength shift observed from GaInAs/InP MQW structure grown on directly-bonded InP/Si substrate using selective MOVPE

[19a-P8-13] Effect of laser irradiation on the luminescence efficiency of GaInNAs quantum wells

[19a-P8-14] Excitation power dependence of the luminescence from GaAsN/GaAs quantum well structures

▲ [19a-P8-15] Relationship between ionized acceptors density and hole traps in p-type GaAsN grown by chemical beam epitaxy

[19a-P8-16] Interfacial electrical characteristics of directly-bonded InP/Si substrate for GaInAsP system growth

[19p-D3-1~18] 15.3 III-V-group epitaxial crystals

△ [19p-D3-1] MOCVD growth of high-hole-concentration InGaAsSb for low-turn-on-voltage DHBTs

[19p-D3-2] Band diagram difference between InSb and InAsSb Quantum wells

[19p-D3-3] EL properties of InGaAsN/GaAsSb quantum well diodes grown on InP substrates

[19p-D3-4] The analysis of recombination process via the hole trap in GaAsN grown by Chemical Beam Epitaxy

△ [19p-D3-5] Evaluation of N and As duration by Raman spevtroscopy in GaAsN thin film growth using the atomic layer epitaxy

[19p-D3-6] Annealing effect on ultra-high-Q micromechanical resonators using strained GaNAs

[19p-D3-7] In-plane structural anisotropy in strained InGaP/InGaP MQWs grown on GaAs

[19p-D3-8] Observation of rapid strain relaxation during metamorphic InGaAs/GaAs growth

[19p-D3-9] Effects of surface reconstructions on the formation of Ga droplets on GaAs(001)

[19p-D3-10] Droplet epitaxy of InAs quantum dots on InP(111)A substrates

[19p-D3-11] Scaling function by quantum dot growth model with 2 species of diffusion atoms

[19p-D3-12] In situ XRD observation during capping of InAs quantum dots

[19p-D3-13] 1.5μm surface emission of InAs QDs embedded by GaAs strain relaxed layer with nanoholes (2)

[19p-D3-14] Polarization insensitive emission from closely-stacked InAs /GaAs quantum dots

[19p-D3-15] Polarization spectral gain feature of semiconductor optical amplifier using closely stacked InAs/GaAs quantum dot

[19p-D3-16] Selective excitation PL properties of ultrahigh-density InAs QD on GaAsSb buffer layer

▼ [19p-D3-17] Two-Step Photocurrent Generation in Droplet Epitaxy GaAs/AlGaAs QD-IBSCs

[19p-D3-18] Formation of GaInAs quantum dots on GaP Substrate by MOCVD