Poster presentation

[19a-P4-1~2] 13.1 Basic properties and their evaluation

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P4 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[19a-P4-1] Practical STEM-EBIC technique for visualization of depletion layer on Si devices

^○Hiroki Tanaka¹, Takayuki Tshikawa¹, Kazuhiro Hanada², Akira Misato², Mitsuhiro Tomita¹ (Toshiba Corp., corporate R&D center.¹, Toshiba S&S Co.²)

9:30 AM - 11:30 AM

▲ [19a-P4-2] Study of carrier density depth profiling in highly-doped Ge using HREELS

^○sungjin park¹, noriyuki uchida¹, yoshihiko moriyama², tsutomu tezuka², tetsuya tada¹ (Nanoelectronics Research Institute, AIST¹, GNC, AIST²)

Oral presentation

[20a-C9-1~12] 13.1 Basic properties and their evaluation

Fri. Sep 20, 2013 9:00 AM - 12:15 PM C9 (TC3 2F-202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-C9-1] Stress evaluation of 2MeV electron irradiated strained-Si/relaxed-Si0.7Ge0.3/Si-substrate

^○(B)Eishiro Murakami¹, Toshiyuki Nakashima^2,3, Masashi Yoneoka¹, Tsunoda Isao¹, Takakura Kenichiro¹, Naka Nobuyuki⁴, Suemasu Takashi⁵ (Kumamoto National College of Technology¹, Miyazaki Univ.², Chuo Denshi Kogyo Co. Ltd.³, HORIBA Ltd.⁴, Tsukuba Univ.⁵)

9:15 AM - 9:30 AM

[20a-C9-2] Crystal / amorphous structure analysis of non-doped and doped Si nanoparticles using Raman spectroscopy

^○Miho Momose^1,2, Masao Hirasaka¹, Yukio Furukawa² (Teijin Ltd.¹, Waseda Univ.²)

9:30 AM - 9:45 AM

[20a-C9-3] Influence of Bias Application to One-Dimensionally Self-Aligned Si-based Quantum Dots on their Photoluminescence

^○(M2)Yoshihisa Suzuki¹, Katsunori Makihara¹, Mitsuhisa Ikeda², Seiichi Miyazaki¹ (Nagoya Univ.¹, Hiroshima Univ.²)

9:45 AM - 10:00 AM

[20a-C9-4] Size Effects in Ultraviolet Raman Spectra of Few-Nanometer-Thick SOI

^○Tetsuya Tada¹, Vladimir Poborchii¹, Yukinori Morita², Shinji Migita², Pavel Geshev³, Toshihiko Kanayama⁴ (AIST-NeRI¹, GNC-AIST², Institute of Thermophysics³, AIST⁴)

10:00 AM - 10:15 AM

[20a-C9-5] Characterization of Electron Emission from High Density Self-aligned Si-based Quantum Dots by Conducting-Probe Atomic Force Microscopy

^○(M2)Daichi Takeuchi¹, Katsunori Makihara¹, Mitsuhisa Ikeda², Seiichi Miyazaki¹ (Nagoya Univ.¹, Hiroshima Univ.²)

10:15 AM - 10:30 AM

▲ [20a-C9-6] Photocarrier Buildup Effects in Si Nanostripes Measured by Scanning Probe Microscopy

^○Leonid Bolotov^1,2, Tetsuya Tada², Koichi Fukuda², Vladimir Poborchii², Toshihiko Kanayama² (Univ. of Tsukuba¹, AIST²)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

▼ [20a-C9-7] Analysis of Electrical Field in Surface Enhanced Raman Spectroscopy Using Strained-Si Substrate

^○Siti Norhidayah Che Mohd Yusoff¹, Daisuke Kosemura¹, Takahiro Kijima¹, Atsushi Ogura¹ (Meiji Univ.¹)

11:00 AM - 11:15 AM

[20a-C9-8] Classical Molecular Dynamics Simulations on Elastic Properties of Polycrystalline Si

^○Norihiko Takahashi¹, Chioko Kaneta¹, Tetsuo Nakanishi² (Fujitsu Laboratories Ltd.¹, Shin-Etsu Chemical Co.,Ltd.²)

11:15 AM - 11:30 AM

[20a-C9-9] Solid state crystallization of a-Si using thin crystalline Ge seed layer

^○Sotetsu Saito¹, Jun-ichi Hanna¹ (Tokyo Tech.¹)

11:30 AM - 11:45 AM

△ [20a-C9-10] Stress superposition from Heterogeneous Origins Evaluated by Finite Element Method Simulation

^○Motohiro Tomita^1,2, Daisuke Kosemura¹, Atsushi Ogura¹ (Meiji Univ.¹, JSPS Research Fellow DC²)

11:45 AM - 12:00 PM

[20a-C9-11] Correlation of oxide density and etching rate

^○syuhei doi¹, ryu hasunuma¹, kikuo yamabe¹ (TsukubaUniversity¹)

12:00 PM - 12:15 PM

△ [20a-C9-12] Observation of LO- and TO-phonon Spectra from High-Ge-Concentration Compressively Strained SiGe Mesa-Structures on a Ge Substrate by Oil-Immersion Raman Spectroscopy

^○Daisuke Kosemura¹, Motohiro Tomita^1,3, Koji Usuda², Tsutomu Tezuka², Atsushi Ogura¹ (Meiji Univ.¹, GNC, AIST², JSPS Research Fellow DC³)

Sessions

13. Semiconductors A (Silicon) » 13.1 Basic properties and their evaluation