[19a-P5-1~14] 13.5 Si process technology

[19a-P5-8] Fabrication of UTB-GeOI wafers with thin Al₂O₃/SiO₂ BOX layers

^○Yoshihiko Moriyama^1,2, keiji Ikeda¹, Shotaro Takeuchi², Yuuichi Kamimuta¹, Yoshiaki Nakamura², Akira Sakai², Koji Izunome³, Tsutomu Tezuka¹ (GNC-AIST¹, Osaka Univ.², GlobalWafers Japan³)

Keywords:GeOI,極薄膜GeOI,epi-Ge