[20p-B4-1~8] 13.5 Si process technology

[20p-B4-5] Annealing Temperature Dependence of Electrical Characterization of P-doped NiSi₂ Electrodes on n-Ge Substrates

^○Masaaki Motoki¹, Ryo Yoshihara¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

Keywords:半導体,Ge