Oral presentation

[18p-A14-1~18] 7.6 Ion beams

Thu. Sep 18, 2014 1:15 PM - 6:15 PM A14 (E305)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[18p-A14-1] Development of ^10/11C molecule production/separation system for ^10/11C ion acceleration

^○Ken Katagiri¹, Kotaro Nagatsu¹, Satoru Hojo¹, Masao Nakao¹, Kazutoshi Suzuki¹, Akira Noda¹, Koji Noda¹ (NIRS¹)

1:30 PM - 1:45 PM

[18p-A14-2] Time of flight analysis of field ionized He in mixtures with Ne or Ar

^○Keisuke Komaki¹, Shigekazu Nagai^1,2, Tatsuo Iwata^1,2, Kazuo Kajiwara^1,2, Koichi Hata^1,2 (Mie Univ.¹, CUTE²)

1:45 PM - 2:00 PM

[18p-A14-3] Cu pattern etching by using Gas Cluster Ion Beam

^○Ryo Hinoura¹, Noriaki Toyoda¹, Ken-ichi Hara², Isao Yamada¹ (Graduate school of engineering, Univ. of Hyogo¹, Tokyo Electron Limited²)

2:00 PM - 2:15 PM

[18p-A14-4] Measurement of reaction product with GCIB irradiation in ambient gas

^○(M2)Hiroki Morimoto¹, Noriaki Toyoda¹, Isao Yamada¹ (Univ. of Hyogo¹)

2:15 PM - 2:30 PM

[18p-A14-5] Velocity control of ClF3 neutral cluster with He carrier gas

^○Toshio Seki¹, Yu Yoshino², Takehiko Senoo², Kunihiko Koike², Kazuhiro Karahashi³, Takaaki Aoki¹, Jiro Matsuo¹ (Kyoto Univ.¹, Iwatani Corp.², Osaka Univ.³)

2:30 PM - 2:45 PM

[18p-A14-6] Transcription process of ripple structure onto transparent and flexible substrate

^○Kuniyoshi Okabe¹, Yosuke Hiraoka¹, Shihomi Tanaka¹, Golap Kalita¹, Masaki Tanemura¹ (Nagoya Inst. Technol.¹)

Break 14:45～15:00 （2:45 PM - 3:00 PM）

3:00 PM - 3:15 PM

[18p-A14-7] Evaluation of Irradiation Damage on Silicon Surfaces of C_nH_2n+1⁺ Polyatomic Ion Beams

^○Kyohei Hayashi¹, Mitsuaki Takeuchi¹, Hiromichi Ryuto¹, Gikan Takaoka¹ (Kyoto Univ.¹)

3:15 PM - 3:30 PM

[18p-A14-8] Study on Highly Sensitive MeV-SIMS Analysis using Chemical Assist Ionization

^○Makiko Fujii¹, Masakazu Kusakari¹, Toshio Seki¹, Takaaki Aoki¹, Jiro Matsuo¹ (Kyoto Univ.¹)

3:30 PM - 3:45 PM

[18p-A14-9] 3D molecular imaging of organic multilayer film by Ar gas cluster ion beam

^○Keisuke Wakamoto¹, Shunichirou Nakagawa¹, Toshio Seki¹, Takaaki Aoki¹ (Kyoto Univ.¹)

3:45 PM - 4:00 PM

[18p-A14-10] Low vacuum SIMS measurement of volatile composite sample by using MeV-energy heavy ions

^○Masakazu Kusakari¹, Makiko Fujii¹, Toshio Seki¹, Takaaki Aoki¹, Jiro Matsuo¹ (Kyoto Univ.¹)

4:00 PM - 4:15 PM

[18p-A14-11] Mass to Charge Ratio Distribution of Charged Droplets Produced by Vacuum Electrospray

^○Satoshi Ninomiya¹, Yuji Sakai², Lee Chuin Chen¹, Kenzo Hiraoka² (Univ. of Yamanashi¹, CERC, Univ. of Yamanashi²)

4:15 PM - 4:30 PM

[18p-A14-12] SIMS measurement of amino acid molecule using water and methanol cluster ion beams

^○Shogo Nagata¹, Kousuke Moritani¹, Issei Ihara¹, Norio Inui¹, Kozo Mochiji¹ (Univ. of Hyogo¹)

Break 16:30～16:45 （4:30 PM - 4:45 PM）

4:45 PM - 5:00 PM

[18p-A14-13] Development of TOF-RBS measurement system using carbon beam

^○Keisuke Yasuda¹, Yoshinori Nakata¹ (WERC¹)

5:00 PM - 5:15 PM

[18p-A14-14] Development of TOF-ERDA with TEA for ultra shallow atom profiling (II)

^○Satoshi Abo¹, Pei Ri¹, Xin Yuan Yao¹, Fujio Wakaya¹, Mikio Takai¹ (Osaka Univ.¹)

5:15 PM - 5:30 PM

[18p-A14-15] Thin film Deposition by Ionic Liquid EMIM-N(CN)2 Ion Beams

^○Yuki Hoshide¹, Mitsuaki Takeuchi¹, Miromichi Ryuto¹, Gikan Takaoka¹ (Photonics and Electronics Science and Engineering Center, Kyoto Univ.¹)

5:30 PM - 5:45 PM

[18p-A14-16] Polarity inversion of c-axis normal oriented ScAlN films by ion beam irradiation

^○(DC)Masashi Suzuki¹, Takahiko Yanagitani¹ (Nagoya Inst. Tech.¹)

5:45 PM - 6:00 PM

[18p-A14-17] Effect of ion irradiation energy in GaN growth on the Ga-ion-implanted SiN_x surface (II)

^○(M2)Yuto Matsui¹, Azamat Osyurahunov¹, Junichi Yanagisawa¹ (Univ. of Shiga Prefecture¹)

6:00 PM - 6:15 PM

[18p-A14-18] Analysis of SOI structure formed by high-temperature oxygen implantation into Si substrates

Tomohiro Kamikawa¹, Yasushi Hoshino¹, Yasunao Saito¹, ^○Jyoji Nakata¹ (Kanagawa Univ.¹)

Poster presentation

[19p-PA3-1~4] 7.6 Ion beams

Fri. Sep 19, 2014 1:30 PM - 3:30 PM PA3 (Gymnasium1)

ポスター掲示時間13:30～15:30(PA3会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[19p-PA3-1] XPS analysis on damage of Si surface induced by argon gas cluster ion beam irradiation(2)

^○Ako Miisho¹, Shin Takahashi¹, Masayuki Inaba¹, Syugo Miyake¹ (Kobelco Research Institute, Inc.¹)

1:30 PM - 3:30 PM

[19p-PA3-2] The effects of irradiation of Gas Cluster Ion Beam for the hard processing materials

^○Katsumi Hanazono¹, Katsumi Tokiguchi¹, Izumi Kataoka¹ (O.S.I Industry Co., Ltd.¹)

1:30 PM - 3:30 PM

[19p-PA3-3] Development of micro-optics for high-resolution IL spectroscopy with proton microbeam probe

^○Wataru Kada¹, Akihito Yokoyama², Masashi Koka², Naoto Yamada², Takahiro Satoh², Tomihiro Kamiya² (Gunma Univ.¹, JAEA²)

1:30 PM - 3:30 PM

[19p-PA3-4] Size control of the ripple structure formed on glass substrate

^○Yosuke Hiraoka¹, Kuniyoshi Okabe¹, Golap Kalita¹, Masaki Tanemura¹ (Nagoya Inst. Technol.¹)

Sessions

07. Beam Technology and Nanofabrication » 7.6 Ion beams

[18p-A14-1~18] 7.6 Ion beams

[18p-A14-1] Development of ^10/11C molecule production/separation system for ^10/11C ion acceleration

[18p-A14-2] Time of flight analysis of field ionized He in mixtures with Ne or Ar

[18p-A14-3] Cu pattern etching by using Gas Cluster Ion Beam

[18p-A14-4] Measurement of reaction product with GCIB irradiation in ambient gas

[18p-A14-5] Velocity control of ClF3 neutral cluster with He carrier gas

[18p-A14-6] Transcription process of ripple structure onto transparent and flexible substrate

[18p-A14-7] Evaluation of Irradiation Damage on Silicon Surfaces of C_nH_2n+1⁺ Polyatomic Ion Beams

[18p-A14-8] Study on Highly Sensitive MeV-SIMS Analysis using Chemical Assist Ionization

[18p-A14-9] 3D molecular imaging of organic multilayer film by Ar gas cluster ion beam

[18p-A14-10] Low vacuum SIMS measurement of volatile composite sample by using MeV-energy heavy ions

[18p-A14-11] Mass to Charge Ratio Distribution of Charged Droplets Produced by Vacuum Electrospray

[18p-A14-12] SIMS measurement of amino acid molecule using water and methanol cluster ion beams

[18p-A14-13] Development of TOF-RBS measurement system using carbon beam

[18p-A14-14] Development of TOF-ERDA with TEA for ultra shallow atom profiling (II)

[18p-A14-15] Thin film Deposition by Ionic Liquid EMIM-N(CN)2 Ion Beams

[18p-A14-16] Polarity inversion of c-axis normal oriented ScAlN films by ion beam irradiation

[18p-A14-17] Effect of ion irradiation energy in GaN growth on the Ga-ion-implanted SiN_x surface (II)

[18p-A14-18] Analysis of SOI structure formed by high-temperature oxygen implantation into Si substrates

[19p-PA3-1~4] 7.6 Ion beams

[19p-PA3-1] XPS analysis on damage of Si surface induced by argon gas cluster ion beam irradiation(2)

[19p-PA3-2] The effects of irradiation of Gas Cluster Ion Beam for the hard processing materials

[19p-PA3-3] Development of micro-optics for high-resolution IL spectroscopy with proton microbeam probe

[19p-PA3-4] Size control of the ripple structure formed on glass substrate