Oral presentation

[17a-C6-1~6] 3.13 Semiconductor optical devices

Wed. Sep 17, 2014 11:00 AM - 12:30 PM C6 (C212)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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11:00 AM - 11:15 AM

[17a-C6-1] Fabrication and evaluation of Si nanowires synthesized by Pd assisted electroless etching

^○Shohei Takahashi¹, Yusuke Matsui¹, Sadao Adachi¹ (Gunma Univ.¹)

11:15 AM - 11:30 AM

[17a-C6-2] Development of high-quality a-SiO:H film using triode type PECVD and low temperature deposition

^○Riku Yamamoto¹, Porponth Sichanugrist¹, Makoto Konagai^1,2 (Tokyo Tech¹, PVREC²)

11:30 AM - 11:45 AM

[17a-C6-3] Defect evaluation of sputter-epitaxial grown Ge film on Si(100)

^○wenchang yeh¹ (Shimane Univ¹)

11:45 AM - 12:00 PM

[17a-C6-4] Silicon Solar Cells Fabricated by Pulse Laser Doping with Silicon Nano Ink

^○Mitsuaki Manabe¹, Hideki Nishimura¹, Takashi Fuyuki¹, Yuka Tomizawa², Yoshinori Ikeda² (Graduate School of Materials Science, Nara Institute of Science and Technology¹, Teijin Co., Ltd.²)

12:00 PM - 12:15 PM

[17a-C6-5] Relations of In/Si Interface Properties with the Formation of Silicon Nanowires

^○Ippei Kita¹, Keigo Fukunaga¹, Hiroshi Yano¹, Ayumi Tani¹, Yasuaki Ishikawa¹, Naofumi Okamoto¹, Ajimal Khan², Takashi Fuyuki¹ (NAIST¹, JST²)

12:15 PM - 12:30 PM

[17a-C6-6] Texturing Low Reflecting Surface of Random Double Textures Using N-fluoropyridinium Salt

^○Tatsuya Kumada¹, Kentaro Kawai¹, Masaki Otani¹, Toshinori Hirano¹, takabumi Nagai², Kenji Adachi², Kenta Arima¹, mizuho Morita¹ (Osaka University¹, Daikin Industries, Ltd²)

Oral presentation

[17p-C6-1~10] 3.13 Semiconductor optical devices

Wed. Sep 17, 2014 2:00 PM - 4:45 PM C6 (C212)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30～14:00 （12:30 PM - 2:00 PM）

2:00 PM - 2:15 PM

[17p-C6-1] Low-voltage-operation Ga2O3:Sn/c-Se heterojunction photodiode

^○Shigeyuki Imura¹, Kenji Kikuchi¹, Kazunori Miyakawa¹, Hiroshi Ohtake¹, Misao Kubota¹ (NHK STRL¹)

2:15 PM - 2:30 PM

[17p-C6-2] Development of high-sensitivity SOI photodiode by high-density arrangement of gold nanoparticles

^○Atsushi Ono^1,2, Yasushi Enomoto³, Yasufumi Matsumura³, Hiroaki Satoh^1,2, Hiroshi Inokawa^1,2 (RIE, Shizuoka Univ.¹, Shizuoka Univ.², NSSC³)

2:30 PM - 2:45 PM

[17p-C6-3] Spectroscopic Sensitivity of SOI Photodiode with Hole-Array-Type Metal Grating for Oblique Incident Light

^○Hiroaki Satoh^1,2, Shohei Iwata², Atsushi Ono^1,2, Hiroshi Inokawa^1,2 (Shizuoka Univ.¹, Shizuoka Univ.²)

2:45 PM - 3:00 PM

▲ [17p-C6-4] Dark current reduction of waveguide InGaAs MSM photodetector on III-V CMOS photonics platform by InAlAs cap layer

^○(DC)Yongpeng Cheng¹, Yuki Ikku¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (Univ. Tokyo¹)

3:00 PM - 3:15 PM

[17p-C6-5] Development pf 4.3um Light-Emitting-Diode

^○Akimasa Tanaka¹, Daisuke Iida¹, Asuka Mishima¹ (Hamamatsu¹)

Break 15:15～15:30 （3:15 PM - 3:30 PM）

3:30 PM - 3:45 PM

[17p-C6-6] Supression of surface oxidation on InAs/GaSb superlattice by nitrogen plasma treatment

^○Yukihiro Tsuji¹, Hiroshi Inada¹, Kenichi Machinaga¹, Sundararajan Balasekaran¹, Kouhei Miura¹, Yashuhiro Iguchi¹, Tsukuru Katsuyama¹, Haruyoshi Katayama², Masafumi Kimata³ (Sumitomo Electric Industries, Ltd.¹, Japan Aerospace Exploration Agency², Ritsumeikan Univ.³)

3:45 PM - 4:00 PM

▲ [17p-C6-7] Effect of surface pretreatments on the performance of InAs/GaSb superlattice MWIR photodiodes.

^〇Sundararajan Balasekaran, Hiroshi Inada, Kouhei Miura, Yukihiro Tsuji, Ken-ichi Machinaga, Masaki Migita, Yasuhiro Iguchi, Tsukuru Tsukuru Katsuyama (Sumitomo Electric Industries, LTD)

4:00 PM - 4:15 PM

[17p-C6-8] Development of 10um Photodiode

^○Akimasa Tanaka¹, Asuka Mishima¹, Yoshinori Osimura¹ (Hamamatsu¹)

4:15 PM - 4:30 PM

[17p-C6-9] Charge Sensitive Infrared Phototransistors (CSIPs) for Far-Infrared Wavelengths

^○(D)Ryota Nihei^1,2, Susumu Komiyama^3,4, Takashi Satoh⁵, Mitsunobu Kawada², Yasuo Doi³, Syuji Matsuura², Takao Nakagawa^1,2 (Univ. of Tokyo¹, ISAS/JAXA², Univ. of Tokyo³, NICT⁴, Univ. of Tokyo⁵)

4:30 PM - 4:45 PM

[17p-C6-10] Improvement of Quantum Efficiency in Charge-Sensitive Infrared Phototransistors (CSIP）

^○Sunmi Kim¹, Susumu Komiyama^2,3, Takashi Satoh¹, Mikhail Patrashin³, Yusuke Kajihara¹ (IIS, Univ. of Tokyo¹, Dept. Basic Sci., Univ. of Tokyo², NICT³)

Oral presentation

[18a-C6-1~10] 3.13 Semiconductor optical devices

Thu. Sep 18, 2014 9:15 AM - 12:00 PM C6 (C212)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:15 AM - 9:30 AM

△ [18a-C6-1] Optical amplification of ultrafast 1.55μm optical signal by a semiconductor optical amplifier comprising highly stacked InAs quantum dots fabricated using the strain-compensation technique

^○Naoya Yoshida^1,2, Hideyuki Sotobayashi¹, Daiki Matuda^1,2, Taiji Watanabe^1,2, Kouichi Akabane², Naokatu Yamamoto², Atushi Kanno², Tetuya Kawanishi² (Aoyama Univ.¹, NICT²)

9:30 AM - 9:45 AM

[18a-C6-2] Analysis of TE mode Unidirectional Semiconductor Ring Lasers by Lamb equation

^○Takahiro Bando¹, Yuhi Yagi¹, Hiromasa Shimizu¹ (Tokyo Univ. of Agri. & Tech.¹)

9:45 AM - 10:00 AM

[18a-C6-3] Design of Quadruple Series-Coupled Quantum Well Microring Wavelength-Selective Switch Considering Chebyshev Condition and Losses

^○Nobuyuki Hayasaka¹, Hiroki Ikehara¹, Taro Arakawa¹, Yasuo Kokubun¹ (YNU¹)

10:00 AM - 10:15 AM

[18a-C6-4] Fabrication of Low-crosstalk and Compact InGaAsP Photonic-wire Optical Switches

^○Yuki Ikku¹, Masafumi Yokoyama¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (Univ. Tokyo¹)

10:15 AM - 10:30 AM

[18a-C6-5] Highly Efficient Spatial Light Modulators by Use of High-purity Thick GaAs

^○Koichi Wakita¹, Takuya Yoshida¹, Makoto Takahashi¹ (Chubu University¹)

Break 10:30～10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[18a-C6-6] Analysis on Silicon Rib Waveguide Modulator using High Carrier Density ITO Layer

^○Masafumi Ayata¹, Takuo Tanemura¹, Yoshiaki Nakano¹ (School of Engineering The University of Tokyo¹)

11:00 AM - 11:15 AM

[18a-C6-7] Quantum dot optical gain modulator integrated with semiconductor optical amplifier

^○Katsuki Watanabe^1,2, Naokatsu Yamamoto², Kouiti Akahane², Toshimasa Umezawa², Tetsuya Kawanishi², Toshifumi Emori¹, Hiroshi Takai¹ (TDU¹, NICT²)

11:15 AM - 11:30 AM

△ [18a-C6-8] Proposal and Experimental Demonstration of Monolithic InP/InGaAsP Polarization Modulator

^○Yuto Kawabata¹, Masaru Zaitsu¹, Takuo Tanemura¹, Yoshiaki Nakano¹ (Univ. of Tokyo¹)

11:30 AM - 11:45 AM

[18a-C6-9] Multimode interference splitter based on Bragg reflector waveguide

^○Ayako Suzuki¹, Xiaodong Gu¹, Akihiro Matsutani¹, Fumio Koyama¹ (Tokyo Ins. of Tech.¹)

11:45 AM - 12:00 PM

[18a-C6-10] High-Responsivity of InP-Based Photodetector Monolithically Integrated with 90^o hybrid by Low Excess Loss MMI Design over Wide Wavelength Range

^○Takehiko Kikuchi¹, Hideki Yagi¹, Naoko Inoue¹, Ryuji Masuyama¹, Tomokazu Katsuyama¹, Katsumi Uesaka¹, Yoshihiro Yoneda¹, Hajime Shoji¹ (Sumitomo Electric Industries¹)

Oral presentation

[18p-C6-1~17] 3.13 Semiconductor optical devices

Thu. Sep 18, 2014 1:30 PM - 6:00 PM C6 (C212)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:00～13:30 （12:00 PM - 1:30 PM）

1:30 PM - 1:45 PM

[18p-C6-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Realization of GaAs_1-xBi_x laser diodes with low temperature dependence of oscillation wavelength

^○Takuma Fuyuki¹, Kenji Yoshida¹, Ryo Yoshioka¹, Masahiro Yoshimoto¹ (Kyoto Inst. Tech.¹)

1:45 PM - 2:00 PM

[18p-C6-2] Wave functions after applying the electric field of electrons and holes in the MBE growth of AlGaAs/AlAs type II quantum wells

^○Takatoshi Nomura¹, Satoshi Shimomura¹, Fumitaro Ishikawa¹, Tadashi Fukuzawa², Sho Shirakata¹, Hisao Kondoh¹ (Ehime Univ.¹, JST²)

2:00 PM - 2:15 PM

[18p-C6-3] Band profile of AlGaAs distributed Bragg reflector with sinusoidal compositional structure.

^○Naoki Manabe¹, Teruyoshi Matsuda¹, Fumitaro Ishikawa¹, Satoshi Shimomura¹ (Ehime Univ.¹)

2:15 PM - 2:30 PM

[18p-C6-4] Numerical simulation of the AlAs selective oxidation characteristics using intermixing method

^○Che Wei¹, Tomoyuki Miyamoto¹ (Tokyo Tech, P&I Lab¹)

2:30 PM - 2:45 PM

△ [18p-C6-5] Basic study on Ion Implanted Quantum Well Intermixing for Optical Confinement of VCSEL

^○(M2)Asako Kikuchi¹, Tomoyuki Miyamoto¹ (Tokyo Ins. of Tech.¹)

2:45 PM - 3:00 PM

[18p-C6-6] Fundamental study of high gain VCSEL using excited states

^○Ken Tsunoda¹, Akihiro Matsutani², Tomoyuki Miyamoto¹ (Tokyo Tech P&I Lab¹, Tokyo Tech Tech Dep²)

3:00 PM - 3:15 PM

[18p-C6-7] Ridge-Type Semiconductor Laser with Partially Formed Insulating Cladding Layer

^○(M2)Mitsunori Oshima¹, Takahiro Numai¹ (Grad. School of Sci. & Eng., Ritsumeikan Univ.¹)

3:15 PM - 3:30 PM

[18p-C6-8] Ridge-Type Semiconductor Laser with the Transversal Diffraction Gratings and Partially Formed Insulating Cladding Layer ―Dependence on the Thickness of the Insulating Cladding Layer―

^○Takuya Hirasaki¹, Takahiro Numai¹ (Ritsumei Univ.¹)

3:30 PM - 3:45 PM

[18p-C6-9] Optical characteristic of GaAs/GaAsBi quantum well on (411)A GaAs substrate

^○Nobutaka Nishii¹, Koichiro Higaki¹, Takamasa Tatebe¹, Yu Nabara¹, Patil Pallavi¹, Fumitaro Ishikawa¹, Satoshi Shimomura¹ (Ehime Univ.¹)

Break 15:45～16:00 （3:45 PM - 4:00 PM）

4:00 PM - 4:15 PM

△ [18p-C6-10] 25-Gb/s operation of InGaAs MQW metamorphic laser on GaAs substrate

^○Ryo Nakao¹, Masakazu Arai¹, Wataru Kobayashi¹, Masaki Kohtoku¹ (NTT Photonics Lab.¹)

4:15 PM - 4:30 PM

△ [18p-C6-11] Low-threshold-current Operation of GaInAsP/InP Membrane-DFB Laser

^○Yuki Atsuji¹, Kyohei Doi¹, Jieun Lee¹, Yuki Atsumi¹, Takuo Hiratani¹, Daisuke Inoue¹, Tomohiro Amemiya², Nobuhiko Nishiyama¹, Shigehisa Arai^1,2 (Tokyo Tech¹, QNERC²)

4:30 PM - 4:45 PM

[18p-C6-12] Four-wavelength Stimulated Emission from 1.3-um External-Cavity Quantum-Dot Laser

^○Nami Yasuoka¹, Mitsuru Ishida², Kan Takada², Masaomi Yamaguchi², Tsuyoshi Yamamoto², Yasuhiko Arakawa¹ (Univ. of Tokyo¹, Fujitsu Labs.²)

4:45 PM - 5:00 PM

▲ [18p-C6-13] Measurement of Temperature Dependence of Threshold Current in InAs/GaAs Quantum Dot Lasers with p-Type Doping

^〇Timothy Rae, Katsuaki Tanabe, Satoshi Iwamoto, Yasuhiko Arakawa (NanoQuine, IIS, Univ. Tokyo)

5:00 PM - 5:15 PM

△ [18p-C6-14] Ultra-broadband near-infrared light source using excited state emissions of multiple InAs quantum dots

^○(M2)Takuma Yasuda¹, Hiroshi Shibata¹, Shunsuke Ohkouchi², Naoki Ikeda³, Hirotaka Ohsato³, Eiichirou Watanabe³, Richard Hogg⁴, Nobuhiko Ozaki¹ (Wakayama Univ.¹, NEC Corp.², NIMS³, Univ. Sheffield⁴)

5:15 PM - 5:30 PM

[18p-C6-15] Measurement method of oscillation wavelength for wideband QD laser

^○Katsumi Yoshizawa¹, Yoshinori Sawado¹, Kouichi Akahane², Naokatsu Yamamoto² (PioneerMTC¹, NICT²)

5:30 PM - 5:45 PM

[18p-C6-16] Low power consumption mid-IR single-mode quantum cascade laser

^○Hiroyuki Yoshinaga¹, Hiroki Mori¹, Jun-ichi Hashimoto¹, Yukihiro Tsuji¹, Makoto Murata¹, Toshiyuki Tanahashi¹, Tsukuru katsuyama¹ (Sumitomo Electric Industries, LTD.¹)

5:45 PM - 6:00 PM

[18p-C6-17] Development of the smallest rocket in the world.

^○Toshihisa Tsukada¹ (Cube I T Ltd.¹)

Poster presentation

[19a-PA8-1~2] 3.13 Semiconductor optical devices

Fri. Sep 19, 2014 9:30 AM - 11:30 AM PA8 (Gymnasium1)

ポスター掲示時間9:30～11:30(PA8会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[19a-PA8-1] Arrayed waveguides InAs QDs LED integrated with converging waveguide

^○(M1)Toshiki Sukigara¹, Yuta Yamamoto¹, Tetsuo Nishiyama¹, Kazuhiko Shimomura¹ (Sophia Univ.¹)

9:30 AM - 11:30 AM

▲ [19a-PA8-2] Extraction of SRH and Auger Recombination Coefficients by Utilizing Theoretical Radiative Recombination Coefficient and Rate Equation in LEDs

^〇Joosun Yun^1,2, Hideki Hirayama², Jong-In Shim¹ (Hanyang Univ.¹, RIKEN²)

Sessions

03. Optics and Photonics » 3.13 Semiconductor optical devices

[17a-C6-1~6] 3.13 Semiconductor optical devices

[17p-C6-1~10] 3.13 Semiconductor optical devices

▲ [17p-C6-4] Dark current reduction of waveguide InGaAs MSM photodetector on III-V CMOS photonics platform by InAlAs cap layer

▲ [17p-C6-7] Effect of surface pretreatments on the performance of InAs/GaSb superlattice MWIR photodiodes.

[18a-C6-1~10] 3.13 Semiconductor optical devices

△ [18a-C6-1] Optical amplification of ultrafast 1.55μm optical signal by a semiconductor optical amplifier comprising highly stacked InAs quantum dots fabricated using the strain-compensation technique

△ [18a-C6-8] Proposal and Experimental Demonstration of Monolithic InP/InGaAsP Polarization Modulator

[18p-C6-1~17] 3.13 Semiconductor optical devices

△ [18p-C6-5] Basic study on Ion Implanted Quantum Well Intermixing for Optical Confinement of VCSEL

△ [18p-C6-10] 25-Gb/s operation of InGaAs MQW metamorphic laser on GaAs substrate

△ [18p-C6-11] Low-threshold-current Operation of GaInAsP/InP Membrane-DFB Laser

▲ [18p-C6-13] Measurement of Temperature Dependence of Threshold Current in InAs/GaAs Quantum Dot Lasers with p-Type Doping

△ [18p-C6-14] Ultra-broadband near-infrared light source using excited state emissions of multiple InAs quantum dots

[19a-PA8-1~2] 3.13 Semiconductor optical devices

▲ [19a-PA8-2] Extraction of SRH and Auger Recombination Coefficients by Utilizing Theoretical Radiative Recombination Coefficient and Rate Equation in LEDs