Poster presentation

[17p-PG2-1~23] 6.3 Oxide-based electronics

Mon. Mar 17, 2014 4:00 PM - 6:00 PM PG2 (G棟2階)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[17p-PG2-1] Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides

^○Kazuki Nagashima¹, Takeshi Yanagida¹, Masaki Kanai¹, Umberto Celano², Sakon Rahong¹, Gang Meng¹, Fuwei Zhuge¹, Yong He¹, Bae Ho Park³, Tomoji Kawai^1,3 (ISIR Osaka Univ.¹, imec², Konkuk Univ.³)

4:00 PM - 6:00 PM

[17p-PG2-2] Characterization of Resistance-Switching Properties of Ni Nano-dots/SiOx/Ni Diodes

^○Chong Liu¹, Takashi Arai¹, Akio Ohta², Daichi Takeuchi¹, Hai Zhang¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (Nagoya Univ.¹, Nagoya Univ. VBL²)

4:00 PM - 6:00 PM

[17p-PG2-3] Characterization of Pt/NiOx/Pt-ReRAM using a plating method for the preparation of memory layer

^○Naohiro Murayama¹, Masataka Yoshihara¹, Ryosuke Ogata¹, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

4:00 PM - 6:00 PM

[17p-PG2-4] Pulse Switching Property of Reset Process in Filament-type Resistive Memories

^○Takumi Moriyama¹, Ryosuke Koishi¹, Kouhei Kimura¹, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (Tottori Univ.¹, TEDREC²)

4:00 PM - 6:00 PM

[17p-PG2-5] Transient response of the pulse switching in the reset process of the resistive memory

^○Kouhei Kimura¹, Takumi Moriyama¹, Ryosuke Koishi¹, satoru Kishida^1,2, Kentaro Kinoshita^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

4:00 PM - 6:00 PM

[17p-PG2-6] Microstructure of sputtered-NiO films and their impacts on electrical properties

^○Tatsuya Iwata¹, Yusuke Nishi¹, Tsunenobu Kimoto¹ (Kyoto Univ.¹)

4:00 PM - 6:00 PM

[17p-PG2-7] Role of Water in Resistance Change Mechanism of CBRAM revealed by impedance characteristics measurement

^○（M1）Masato Yoshihara¹, Sho Yura¹, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

4:00 PM - 6:00 PM

[17p-PG2-8] Measuring Oxide Surface Charge at SrTiO₃/Water Interfaces

^○Xiuyi Hou¹, Ryota Takahashi¹, Mikk Lippmaa¹ (ISSP, The University of Tokyo¹)

4:00 PM - 6:00 PM

[17p-PG2-9] Submicron patterning of Pb(Zr,Ti)O₃ thin films by water lift-off process

Takahiro Niwa¹, ^○Kazuhiro Nakanishi², Sinya Kumagai³, Takeshi Kawae³, Minoru Sasaki², Akiharu Morimoto² (Grad. School of Natural Sci. & Tech. Kanazawa Univ.¹, College of Sci. & Eng. Kanazawa Univ.², Toyota Tech. Inst.³)

4:00 PM - 6:00 PM

[17p-PG2-10] Annealing Effect on the Structure of TiO₂ Films Deposited by Glancing Angle Deposition

^○Yoichi Hoshi¹, Terumichi Hirai¹, Naoto Kitahara¹ (Tokyo Polytechnic Univ.¹)

4:00 PM - 6:00 PM

[17p-PG2-11] Topotactic fluorination of SrCoO2.5 thin films using PVDF

^○Tsukasa Katayama¹, Akira Chikamatsu^1,2, Yasushi Hirose^1,2,3, Tomoteru Fukumura^1,2, Tetsuya Hasegawa^1,2,3 (University of Tokyo¹, JST-CREST², KAST³)

4:00 PM - 6:00 PM

[17p-PG2-12] Electrical Discharge Characteristics of High Quality Magnesium Oxide Thin Films Having CoO Nanoparticles

^○Hiroki Kosuga¹, Hideki Yoshioka², Shin-ichi Yamamoto¹ (Ryukoku Univ.¹, Hyogo Pref. Inst. of Tech.²)

4:00 PM - 6:00 PM

[17p-PG2-13] Effect of RTA treatment on photovoltaic characteristics of AZO/n-type semiconductor/Cu₂O solar cells

^○Yuki Nishi¹, Toshihiro Miyata¹, Tadatugu Minami¹ (OEDS R&D Center, Kanazawa I. T.¹)

4:00 PM - 6:00 PM

[17p-PG2-14] Fabrication of Cu2O thin films and solar cells by RF reactive sputtering

^○Taisuke Seishu¹, Takashi Yamashita¹, Mutsumi Sugiyama¹ (Tokyo Univ. of Science¹)

4:00 PM - 6:00 PM

[17p-PG2-15] Electrochemical Properties of Nano-Islands of Zinc and Niobium Oxides Deposited on Aluminum Thin Film by RF Magnetron Reactive Sputtering

^○Go Sajiki¹, Yasuhiko Benino², Tokuro Nanba², Hiroshi Okano¹ (Kagawa-NCT¹, Okayama Univ.²)

4:00 PM - 6:00 PM

[17p-PG2-16] Analysis of compositions for NbOx thin film prepared by RF magnetron sputtering method

^○Masashi Yoda¹, Takurou Tsuruoka¹, Go Sajiki¹, Hiroshi Okano¹ (Kagawa-nct¹)

4:00 PM - 6:00 PM

[17p-PG2-17] Resistivity dependence of Monoclinic Thin Tungsten Oxide Film on Annealing Processes

^○Wei Li¹, Akito Sasaki³, Hideyuki Oozu³, Katsuaki Aoki³, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech IGSSE², Toshiba Material Co., LTD³)

4:00 PM - 6:00 PM

[17p-PG2-18] Photocatalytic effect of SrZnO2 thin film III

^○Tohru Okamoto¹, Yuuji Kimura¹, Xinwei Zhao¹ (Touri Univ.¹)

4:00 PM - 6:00 PM

[17p-PG2-19] Fabrication of NiO:Na2O thin films for transparent solar cells Ⅲ

^○Tatsunori Yamaguchi¹, Shota Tanaka¹, SangCheol Kim¹, Shuji Komuro², Xinwei Zhao¹ (Tokyo Univ of Sci.¹, Toyo Univ.²)

4:00 PM - 6:00 PM

[17p-PG2-20] Fabrication of Ga-doped ZnO thin films for transparent solar cellsⅡ

^○Sangcheol Kim¹, Shota Tanaka¹, Tatsunori Yamaguchi¹, Shuji Komuro¹, Xinwei Zhao¹ (Tokyo University of Science¹)

4:00 PM - 6:00 PM

[17p-PG2-21] Influence of base in hydrothermal synthesis of crossed ZnO nanorods

^○Ryuji Okumura¹, Yuta Kondo¹, Nobuya Hiroshiba¹, Yo Ichikawa¹ (Nagoya Inst. of Tech.¹)

4:00 PM - 6:00 PM

[17p-PG2-22] Electrode fabrications of ZnO nanorods by pulsed laser melting.

^○（M1）Wataru Yano¹, Yuta Kondo¹, Satoru Shimada¹, Nobuya Hiroshiba¹, Yo Ichikawa¹ (Nagoya Inst. of Tech.¹)

4:00 PM - 6:00 PM

[17p-PG2-23] Evaluation of compound oxide particles and thin films prepared by PLA in water

^○（M2）Hongquan Yang¹, Katumi Tanaka¹,Choo Cheowkeong² (The Univ of. Electro-Communications¹, CIPE²)

Oral presentation

[18a-E8-1~10] 6.3 Oxide-based electronics

Tue. Mar 18, 2014 9:00 AM - 11:45 AM E8 (E202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-E8-1] Direct observation of the hydration structure on a photocatalyst surface by FM-AFM

^○Seiji Kawasaki¹, Shunsuke Suiko², Ryota Takahashi¹, Hiroshi Onishi², Mikk Lippmaa¹ (Univ. of Tokyo, ISSP¹, Kobe Univ. Graduate School of Science²)

9:15 AM - 9:30 AM

△ [18a-E8-2] Photovoltaic property of CdSe quantum dot sensitized solar cells including TiO₂ nanotube electrode fabricated by liquid phase deposition method

^○Masaya Akimoto¹, Naoya Osada², Yuhei Ogomi^3,4, Shuzi Hayase^3,4, Kenji Yoshino^4,5, Taro Toyoda^1,4, Qing Shen^1,4 (Univ. of Electro-commun.¹, Univ. of Chuo², Univ. of Kyushu-institute³, JST-CREST⁴, Miyazaki Univ.⁵)

9:30 AM - 9:45 AM

△ [18a-E8-3] Fabrication and Characterization of Nb and N co-doped Anatase TiO₂

^○（DC）Masato Emori¹, Akiko Sakino¹, Hiroshi Sakama¹ (Sophia Univ.¹)

9:45 AM - 10:00 AM

△ [18a-E8-4] Investigation of Etching Damage of TiO₂ Thin Films Observed in XAS spectra

^○Keiji Sano¹, Masahito Niibe¹, Retsuo Kawakami², Yoshitaka Nakano³ (Univ. Hyogo¹, Univ. Tokushima², Chubu Univ.³)

10:00 AM - 10:15 AM

△ [18a-E8-5] Fabrication of high-mobility two dimensional electron system of delta doped SrTiO₃ exhibiting strong quantum oscillations

^○Yuya Matsubara^1,2, Kei Takahashi¹, Denis Maryenko¹, Yusuke Kozuka², Atsushi Tsukazaki³, Masashi Kawasaki^1,2, Yoshinori Tokura^1,2 (RIKEN CEMS¹, Dept. of Appl. Phys. Univ. of Tokyo², IMR Tohoku Univ.³)

Break 10:15〜10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

△ [18a-E8-6] An improvement in growth of VO2 crystal and transition characteristic by TiN conductive buffer layer

^○Suruz Mian Md.¹, Okimura Kunio¹ (Tokai Univ.¹)

10:45 AM - 11:00 AM

[18a-E8-7] Modulation of Phase Transition Temperature in VO₂ Ultra-Thin Films by Interface Engineering

^○Takeaki Yajima¹, Yuma Ninomiya¹, Tomonori Nishimura¹, Kosuke Nagashio¹, Akira Toriumi¹ (Univ. of Tokyo¹)

11:00 AM - 11:15 AM

△ [18a-E8-8] Inhomogeneous electronic domain structure induced by local stress during phase transition in epitaxial VO₂ thin films

^○Yuma Ninomiya¹, Takeaki Yajima¹, Tomonori Nishimura¹, Kosuke Nagashio¹, Akira Toriumi¹ (Univ. of Tokyo¹)

11:15 AM - 11:30 AM

△ [18a-E8-9] Band diagram on p-n junction of Mott-insulator LaMnO₃ and band-insulator Nb:SrTiO₃ determined by X-ray photoemission spectroscopy

^○（D）Miho Kitamura^1,2, Masaki Kobayashi², Enju Sakai², Koji Horiba², Ryota Takahashi³, Mikk Lippmaa³, Hiroshi Fujioka¹, Hiroshi Kumigashira² (The University of Tokyo¹, KEK-PF², The University of Tokyo³)

11:30 AM - 11:45 AM

△ [18a-E8-10] Two dimensional superconductivity at BaPbO₃/BaBiO₃ interface

^○（DC）Hideyuki Kawasoko¹, Daigorou Hirai², Jobu Matsuno³, Hidenori Takagi^2,4 (Univ. of Tokyo¹, Univ. of Tokyo², Riken CEMS³, Max Planck Inst.⁴)

Oral presentation

[18p-E8-1~21] 6.3 Oxide-based electronics

Tue. Mar 18, 2014 1:15 PM - 6:45 PM E8 (E202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45〜13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:30 PM

[18p-E8-1] Photo-induced sign inversion of anomalous Hall effect in EuO thin films

^○Yuki Ohuchi¹, Yusuke Kozuka¹, Nafise Rezaei², Mohammad Baharamy^1,3, Ryotaro Arita^1,4, Kazunori Ueno^4,5, Atsushi Tsukazaki^4,6, Masashi Kawasaki^1,3 (Dept. of Applied Physics, Univ. of Tokyo¹, Isfahan Univ. of Technology², RIKEN CEMS³, JST-PRESTO⁴, Dept. of Basic Science, Univ. of Tokyo⁵, IMR, Tohoku Univ⁶)

1:30 PM - 1:45 PM

△ [18p-E8-2] Magnetoelectric properties of oleic acid coated Co_0.5Fe_2.5O₄ nanocrystal self-assembled film

^○Koichiro Nara¹, Yuichi Narada¹, Hirokazu Shimooka¹, Hiroyuki Deguchi¹, Masanori Mitome², Shigemi Kohiki¹ (Kyushu Inst. Tech.¹, NIMS²)

1:45 PM - 2:00 PM

△ [18p-E8-3] Magnetotransport of oleic acid coated Fe₃O₄ nanocrystal self-assembled film

^○Yuki Nakamura¹, Toru Nakano¹, Hirokazu Shimooka¹, Koichi Okada², Kotone Hasegawa³, Masanori Mitome³, Shigemi Kohiki¹ (KIT¹, Osaka Univ.², NIMS³)

2:00 PM - 2:15 PM

△ [18p-E8-4] Metal-insulator transition due to charge disproportionation at a high temperature in a SrFeO_2.80 epitaxial thin film

^○Kei Hirai¹, Daisuke Kan¹, Noriya Ichikawa¹, Ko Mibu², Yoshitaka Yoda³, Yuichi Shimakawa^1,4 (ICR, Kyoto Univ.¹, Nagoya Institute of Technology², JASRI³, JST-CREST⁴)

2:15 PM - 2:30 PM

△ [18p-E8-5] Oxygen-ion diffusion in a LaAlO3/CaFeO2.5/SrTiO3 heterostructure during reduction and oxidization

^○Noriaki Murakami¹, Daisuke Kan¹, Noriya Ichikawa¹, Yuuichi Shimakawa^1,2 (ICR, Kyoto Univ.¹, JST-CREST²)

2:30 PM - 2:45 PM

△ [18p-E8-6] Magnetic and electric conducting properties of cluster-glass Mg_1.0Fe_1.5Ti_0.5O4 thin film

^○（B）Toshiyuki Ooshima¹, Masanao Takahashi¹, Hiroyasu Yamahara¹, Munetoshi Seki¹, Hitoshi Tabata¹ (Univ. tokyo¹)

2:45 PM - 3:00 PM

[18p-E8-7] The Electrical Conduction Control of Spinel-type CoFe₂O₄ Films and Their Applications for Magnetic Tunnel Junction Devices

^○（M1）Masanao Takahashi¹, Toshiyuki Ohshima¹, Hiroyasu Yamahara¹, Munetoshi Seki¹, Hitoshi Tabata¹ (Tokyo Univ.¹)

3:00 PM - 3:15 PM

[18p-E8-8] Anomalous photovoltaic property observed in LaFeO₃/SrTiO₃ heterojunction with interfacial charge discontinuity

^○Masao Nakamura¹, Toshiaki Tanigaki¹, Hyun Soon Park¹, Tsuyoshi Matsuda², Daisuke Shindo^1,3, Masashi Kawasaki^1,4, Yoshinori Tokura^1,4 (RIKEN-CEMS¹, JST², Tohoku Univ.³, Univ. of Tokyo⁴)

3:15 PM - 3:30 PM

[18p-E8-9] Spin-injection at room temperature in Ge:Fe3O4/Nb:SrTiO3 Schottky diode structure

^○Munetoshi Seki¹, Masanao Takahashi¹, Toshiyuki Ohshima¹, Hiroyasu Yamahara¹, Hitoshi Tabata¹ (Univ. of Tokyo¹)

3:30 PM - 3:45 PM

[18p-E8-10] Synthesis of Ca₂FeGaO₅ brownmillerite and its low-temperature oxidation

^○Noriya Ichikawa¹, Yuichi Shimakawa^1,2 (ICR, Kyotop Univ.¹, JST-CREST²)

3:45 PM - 4:00 PM

△ [18p-E8-11] Thin film growth and magnetic properties of La₂MnFeO₆ double-perovskites

^○Kengo Nogami¹, Kohei Yoshimatsu¹, Keisuke Watarai¹, Takayoshi Oshima¹, Akira Ohtomo^1,2,3 (Graduate School of Science and Engineering, Tokyo Tech¹, MCES², JST-ALCA³)

Break 16:00〜16:15 （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

△ [18p-E8-12] STM study of Nd_0.6Sr_0.4MnO₃ thin films: Dependence of oxygen partial pressures during growth

^○Ryota Shimizu¹, Katsuya Iwaya¹, Takeo Ohsawa¹, Susumu Shiraki¹, Taro Hitosugi^1,2 (Tohoku Univ.¹, JST-PRESTO²)

4:30 PM - 4:45 PM

△ [18p-E8-13] Electrical transport properties of Nb-based perovskite oxynitride epitaxial thin films

^○Daichi Oka¹, Yasushi Hirose^1,2,3, Shoichiro Nakao^1,2,3, Tomoteru Fukumura^1,2,3, Tetsuya Hasegawa^1,2,3 (Univ. of Tokyo¹, KAST², JST-CREST³)

4:45 PM - 5:00 PM

△ [18p-E8-14] Fabrication and Transport Properties of Pyrochlore Iridate Heterostructure

^○Takahiro Fujita¹, Yusuke Kozuka¹, Masaki Uchida¹, Atsushi Tsukazaki^2,3, Taka-hisa Arima^4,5, Masashi Kawasaki^1,5 (Dept. Appl. Phys., the Univ. of Tokyo¹, IMR, Tohoku Univ.², JST-PRESTO³, Dept. Adv. Mater. Sci., the Univ. of Tokyo⁴, RIKEN CEMS⁵)

5:00 PM - 5:15 PM

△ [18p-E8-15] Reststrahlen reflection property of rare-earth garnet in terahertz regime

^○Masaki Adachi¹, Hiroyasu Yamahara¹, Shunsuke Kawabe¹, Hitoshi Tabata¹ (Univ. of Tokyo¹)

5:15 PM - 5:30 PM

[18p-E8-16] Octahedral tilt propagation controlled by A-site cation size at perovskite oxide heterointerfaces

^○Ryotaro Aso¹, Daisuke Kan¹, Yuichi Shimakawa^1,2, Hiroki Kurata^1,2 (ICR, Kyoto Univ.¹, JST-CREST²)

5:30 PM - 5:45 PM

△ [18p-E8-17] Phase control of a perovskite oxide by octahedral tilt propagation

^○Riko Sato¹, Daisuke Kan¹, Ryotaro Aso¹, Hiroki Kurata^1,2, Yuichi Shimakawa^1,2 (ICR, Kyoto Univ.¹, JST-CREST²)

5:45 PM - 6:00 PM

[18p-E8-18] Oxygen octahedral tilts under substrate-induced compressive and tensile strain

^○Daisuke Kan¹, Ryotaro Aso¹, Hiroki Kurata^1,2, Yuichi Shimkakawa^1,2 (ICR, Kyoto Univ¹, JST-CREST²)

6:00 PM - 6:15 PM

[18p-E8-19] Optical absorption and Luminescence Properties of Strongly-correlated Ferroelectric YMnO₃ Thin Films

^○Hiroshi Uga¹, Kazuhiro Maeda¹, Atsushi Ashida¹, Takeshi Yoshimura¹, Masaaki Nakayama², Yoshiaki Furukawa², Norifumi Fujimura¹ (Osaka prefecture Univ¹, Osaka city Univ²)

6:15 PM - 6:30 PM

[18p-E8-20] Ferroelectricity in La₂NiMnO₆ thin films

^○Ryota Takahashi¹, Isao Ohkubo^2,3, Miho Kitamura², Yasuaki Sakurai², Masaharu Oshima^2,4, Yasuo Cho⁵, Mikk Lippmaa¹ (ISSP, University of Tokyo¹, University of Tokyo², NIMS³, University of Tokyo⁴, Tohoku University⁵)

6:30 PM - 6:45 PM

▲ [18p-E8-21] Investigation of effective carrier characteristics in strongly correlated (La,Pr,Ca)MnO₃ films by the THz Time Domain Spectroscopy

^○（D）Thi Van Anh Nguyen¹, Azusa Nakamoto Hattori¹, Masaya Nagai², Takuro Nakamura¹, Kohei Fujiwara¹, Masaaki Ashida², Hidekazu Tanaka¹ (ISIR, Osaka Univ.¹, Grad. School of Eng. Sci., Osaka Univ.²)

Oral presentation

[19a-E8-1~9] 6.3 Oxide-based electronics

Wed. Mar 19, 2014 9:15 AM - 11:45 AM E8 (E202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:15 AM - 9:30 AM

[19a-E8-1] Ion doping into VO₂ nano wires by electrolysis of adsorbed water using air nano-gap

^○（M1）Tsubasa Sasaki¹, Teruo Kanki¹, Hidekazu Tanaka¹ (ISIR, Osaka Univ.¹)

9:30 AM - 9:45 AM

[19a-E8-2] Size-control of micro-scaled metal-insulator domains in VO₂ thin films on TiO₂(001) substrates and clarification of the domain appearance

^○Kenichi Kawatani¹, Teruo Kanki¹, Hidekazu Tanaka¹ (ISIR, Osaka Univ.¹)

9:45 AM - 10:00 AM

[19a-E8-3] Low power-driven metal-insulator transition using the Joule heat in VO2 free-standing structures and its mechanism elucidation by heat flow simulation

^○Shota Yamasaki¹, Teruo Kanki¹, Luca Pellegrino², Nicola Manca^2,3, Daniel Marre^2,3, Hidekazu Tanaka¹ (Osaka Univ.¹, CNR-SPIN², Genova Univ.³)

10:00 AM - 10:15 AM

[19a-E8-4] Plasmon detections of Mott transition in strongly correlated oxides VO2

^○Hiroaki matsui¹, Teruo Kanki², Hidekazu Tanaka², hitoshi tabata¹ (The Univ. of Tokyo¹, ISIR-Sanken, Osaka Univ.²)

Break 10:15〜10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[19a-E8-5] Thermopower of (W_1-xV_x)O₂ epitaxial films

^○Kenji Endo¹, Takayoshi Katase¹, Hiromichi Ohta¹ (RIES-Hokkaido Univ.¹)

10:45 AM - 11:00 AM

[19a-E8-6] Electric field & hydrogenation induced insulator-metal transition and thermopower modulation of VO₂ thin films

^○Takayoshi Katase¹, Kenji Endo¹, Hiromichi Ohta¹ (RIES-Hokkaido Univ.¹)

11:00 AM - 11:15 AM

[19a-E8-7] Metal-insulator transitions in epitaxial VO₂ thin films on MgF₂ substrates

^○Keisuke Shibuya¹, Akihito Sawa¹ (AIST¹)

11:15 AM - 11:30 AM

[19a-E8-8] Growth of VO₂ (B) thin films by reactive sputtering and its transformation to VO₂ (M1) phase

^○Binti Azhan Nurul Hanis¹, Kui Su¹, Kunio Okimura¹ (Tokai Univ.¹)

11:30 AM - 11:45 AM

[19a-E8-9] Electronic structure study of SrVO3 film by using scanning tunneling microscope

^○Yoshinori Okada¹, Ryota Shimizu¹, Susumu Shiraki¹, Taro Hitosugi^1,2 (Tohoku University WPI-AIMR¹, JST-PRESTO²)

Oral presentation

[19p-E8-1~21] 6.3 Oxide-based electronics

Wed. Mar 19, 2014 1:15 PM - 6:45 PM E8 (E202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 11:45〜13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:30 PM

△ [19p-E8-1] Important Aspects of Resistive Transition of SiO2 Film Fabricated by Sputter Deposition

^○Rintaro Yamaguchi¹, Shingo Sato¹, Yasuhisa Omura¹, Kazuhiro Nakamura¹ (Kansai Univ.¹)

1:30 PM - 1:45 PM

[19p-E8-2] Consideration on Criterion of Resistive Transition of SiO2 Film Fabricated by Sputter Deposition

Rintaro Yamaguchi¹, Hirotaka Kongo¹, ^○Honfei Lu¹, Shingo Sato¹, Yasuhisa Omura¹, Kazuhiro Nakamura¹ (Kansai Univ.¹)

1:45 PM - 2:00 PM

△ [19p-E8-3] Resistive nonvolatile memory with SiC_xO_y having oxidation-reduction reaction

^○（B）Kyohei Kida¹, Takahiro Tsukamoto¹, Yoshiyuki Suda¹ (Tokyo Univ. of Agric. & Technol.¹)

2:00 PM - 2:15 PM

△ [19p-E8-4] Observation of the interfacial state of hydrogen ions migration-type ReRAM by using synchrotron radiation

^○Takeshi Notsu¹, Akihiro Hanada², Hiroki Miura¹, Satoru Kishida^1,3, Hitoshi Osawa⁴, Toshiaki Ina⁴, Motohiro Suzuki⁴, Naomi Kawamura⁴, Masaichiro Mizumaki⁴, Tomoya Uruga⁴, Yasuhiko Imai⁴, Shigeru Kimura⁴, Kentaro Kinoshita^1,3 (Tottori Univ.¹, Organization for Regional Industrial Academic Cooperation, Tottori University², Tottori Univ. Electronic Display Research Cente³, JASRI/SPring-8⁴)

2:15 PM - 2:30 PM

△ [19p-E8-5] Observation of conductive filaments in amorphous InGaZnO-based resistive switching memory

^○Keisuke Kado^1.2, Mutsunori Uenuma^1,2, Kriti Sharma^1,2, Haruka Yamazaki^1,2, Satoshi Urakawa^1,2, Yasuaki Ishikawa^1,2, Yukiharu Uraoka^1,2 (NAIST¹, CREST²)

2:30 PM - 2:45 PM

▼ [19p-E8-6] Analysis of Degradation Mechanism on Bottom Gate Amorphous InGaZnO Thin-Film Transistors with Siloxane Passivation Layer

^○（M1）Chaiyanan Kulchaisit^1,2, Yasuaki Ishikawa^1,2, Yoshihiro Ueoka^1,2, Bermundo Juan Paolo^1,2, Masahiro Horita^1,2, Yukiharu Uraoka^1,2 (NAIST¹, CREST²)

2:45 PM - 3:00 PM

△ [19p-E8-7] Electrical properties of IGZO-TFT with Al₂O₃ gate insulators by PE-ALD method

^○Kazunori Kurishima^1,2, Toshihide Nabatame^2,3, Maki Shimizu², Shinya Aikawa², Kazuhito Tsukagoshi², Akihiko Ohi², Toyohiro Chikyo², Atsushi Ogura¹ (Meiji Univ.¹, NIMS², JST-CREST³)

3:00 PM - 3:15 PM

△ [19p-E8-8] Conduction mechanism of NiO-based resistive switching cells and new insight into the difference in resistance states

^○Tatsuya Iwata¹, Yusuke Nishi¹, Hiroki Sasakura¹, Tsunenobu Kimoto¹ (Kyoto Univ.¹)

3:15 PM - 3:30 PM

[19p-E8-9] Characterization of NiO thin films by a reactive-sputtering method with a pair of facing Ni targets

^○（M1）yasuaki furuya¹, mai kawai², tokahiro nomoto², nozomu tsuboi^2,3 (Grad. School of Sci. and Tech., Niigata Univ.¹, Fac. of Eng., Niigata Univ.², Cen. for Trans. Research, Niigata Univ.³)

3:30 PM - 3:45 PM

[19p-E8-10] Ferroelectric resistive switching in metal/BaTiO₃/oxide tunnel junctions

^○Hiroyuki Yamada^1,2, Atsushi Tsurumaki-Fukuchi¹, Yasukiyo Toyosaki¹, Masaki Kobayashi³, Hironori Nakao³, Koji Horiba³, Hiroshi Kumigashira³, Shoji Ishibashi¹, Akihito Sawa¹ (AIST¹, JST-PRESTO², KEK-PF³)

3:45 PM - 4:00 PM

[19p-E8-11] Resistance-Switching Properties of Mn-Nanodots embedded SiOx Films

^○Takashi Arai¹, Chong Liu¹, Akio Ohta², Katsunori Makihara¹, Seiichi Miyazaki¹ (Nagoya Univ.¹, Nagoya Univ. VBL²)

Break 16:00〜16:15 （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

[19p-E8-12] First-Principles Study of Resistive-Random-Access-Memories

^○Katsumasa Kamiya¹, MoonYoung Yang², Magyari-Kope Blanka³, Yoshio Nishi³, Kenji Shiraishi⁴ (Kanagawa Inst. of Tech.¹, Univ. of Tsukuba², Stanford Univ.³, Nagoya Univ.⁴)

4:30 PM - 4:45 PM

[19p-E8-13] Origin of the SET times of the Resistive Switching in Tantalum Oxide Films

^○Yoshifumi Nishi^1,2, Stephan Menzel¹, Karsten Fleck¹, Ulrich Boettger¹, Rainer Waser¹ (RWTH Aachen University¹, Toshiba R&D Center²)

4:45 PM - 5:00 PM

[19p-E8-14] Rate-limiting processes in the fast SET operation of a Cu-Ta₂O₅ atomic switch

^○Tohru Tsuruoka^1,2, Tsuyoshi Hasegawa^1,2, Ilia Valov³, Rainer Waser³, Masakazu Aono¹ (NIMS¹, JST-CREST², RWTH-Aachen³)

5:00 PM - 5:15 PM

[19p-E8-15] Development of 300mm Mass Production Sputtering Technology for ReRAM

^○Natsuki Fukuda¹, Kazunori Fukuju¹, Yutaka Nishioka¹, Koukou Suu¹ (ULVAC ISET¹)

5:15 PM - 5:30 PM

[19p-E8-16] Resistive Hysteresis and Memory Characteristics of CSD Perovskite-type ferroelectric Thin Films

^○Shimpei Fuchida¹, Shuhei Hashimoto¹, Ziyang Zhang¹, Kaoru Yamashita¹, Minoru Noda¹ (Kyoto Inst. Tech¹)

5:30 PM - 5:45 PM

[19p-E8-17] Electric double layer transistor on beta-Ga₂O₃ single crystal

^○Kazunori Ueno^1,2, Taro Hitosugi^2,3, Koji Koyama⁴ (Dept.Basic Sci.,Univ. Tokyo.¹, JST-PRESTO², WPI-AIMR, Tohoku Univ.³, Namiki precision jewel⁴)

5:45 PM - 6:00 PM

[19p-E8-18] Application of gallium oxide to electrochemical reduction of carbon dioxide

^○Takeyuki Sekimoto¹, Masahiro Deguchi¹, Satoshi Yotsuhashi¹, Yuka Yamada¹, Tatekazu Masui², Akito Kuramata³, Shigenobu Yamakoshi³ (Panasonic Corporation¹, KOHA Co., Ltd.², TAMURA Corporation³)

6:00 PM - 6:15 PM

[19p-E8-19] Control of Lattice Defects in Single-Crystal SnO2 by Mechanical Stress

^○Makoto Sakurai¹, Pradyot Koley¹, Kewei Liu², Masakazu Aono¹ (NIMS, MANA¹, Chinese Academy of Science²)

6:15 PM - 6:30 PM

[19p-E8-20] Fabrication of ZnO/LiNbO₃/ZnO stacked structures for waveguide Pockels sensors

^○Housei Akazawa¹, Toshifumi Watanabe¹, Koji Yamada¹, Tai Tsuchizawa¹, Seiichi Itabashi¹, Maasru Shimada¹, Hiroshi Fukuda¹ (NTT MI Labs.¹)

6:30 PM - 6:45 PM

[19p-E8-21] Analysis on Carrier Density of the ITO Nanoparticles using Scanning Ellipsometry

^○Ai Takenoshita¹, Junjun Jia², Takehiro Yonezawa¹, Kazuhiko Yamasaki¹, Hiromi Nakazawa¹, Yuzo Shigesato² (Mitsubishi Materials Corp.¹, Aoyama Gakuin Univ.²)

Oral presentation

[20a-E8-1~8] 6.3 Oxide-based electronics

Thu. Mar 20, 2014 9:30 AM - 11:30 AM E8 (E202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:30 AM - 9:45 AM

[20a-E8-1] Enhanced photoelectrochemical properties of Ir:SrTiO₃ containing Ir-nanopillars

^○Seiji Kawasaki¹, Ryota Takahashi¹, Takahisa Yamamoto², Akihiko Kudo³, Mikk Lippmaa¹ (Univ. of Tokyo, ISSP¹, Nagoya Univ.², Tokyo Univ. of Science³)

9:45 AM - 10:00 AM

[20a-E8-2] Photo-generated carrier dynamics in rutile-TiO₂ with different surfaces

^○Takahiro Aoki¹, Juri Igarashi¹, Kazuhiro Ema¹, Hideyuki Kunugita¹ (Sophia Univ.¹)

10:00 AM - 10:15 AM

[20a-E8-3] Critical Influence of Surface/Boundary Adsorbates on The Field Effect Mobility in TiO₂-Channel TFTs

^○Takeaki Yajima¹, Go Oike¹, Tomonori Nishimura¹, Kosuke Nagashio¹, Akira Toriumi¹ (Univ. of Tokyo¹)

10:15 AM - 10:30 AM

[20a-E8-4] Electronic Structure Calculations for Perovskite Solid Solutions (SrTiO₃)_1-x(LaTiO₂N)_x

^○Naoto Umezawa¹, Anderson Janotti² (NIMS¹, UCSB²)

10:30 AM - 10:45 AM

[20a-E8-5] Control of carrier concentration of electrochemically grown Cu₂O by precipitation reaction process

^○Shunsuke Sato¹, Atsushi Ashida¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (Osaka Prefecture Univ.¹)

10:45 AM - 11:00 AM

[20a-E8-6] Cu₂O heterojunction solar cells using Cu₂O sheets prepared with changing hole density

^○Yuki Nishi¹, Toshihiro Miyata¹, Tadatugu Minami¹ (OEDS R&D Center, Kanazawa I. T.¹)

11:00 AM - 11:15 AM

[20a-E8-7] Relationship between deposition methods and photovoltaic properties in semiconductor/Cu₂O sheet heterojunction solar cells

^○Yuki Nishi¹, Toshihiro Miyata¹, Tadatugu Minami¹ (OEDS R&D Center, Kanazawa I. T.¹)

11:15 AM - 11:30 AM

[20a-E8-8] Kinetic consideration of improvement of decomposition rate of organic materials using visible light sensitive WO₃ photocatalyst added metal oxide

^○Daisuke Fukushi¹, Akira Sato¹, Takao Kusaka¹, Yoshinori Kataoka¹, Katsuaki Aoki¹ (TOSHIBA MATERIALS Co., LTD.,¹)

Oral presentation

[20p-E8-1~8] 6.3 Oxide-based electronics

Thu. Mar 20, 2014 1:00 PM - 3:00 PM E8 (E202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 11:30〜13:00 （11:30 AM - 1:00 PM）

1:00 PM - 1:15 PM

[20p-E8-1] Li-ion-conducting properties of all-solid-state Li-ion battery with clean electrolyte/electrode interface

^○Masakazu Haruta¹, Tohru Suzuki¹, Yoshitaka Takagi¹, Ryota Shimizu¹, Susumu Shiraki¹, Taro Hitosugi¹ (AIMR Tohoku Univ.¹)

1:15 PM - 1:30 PM

[20p-E8-2] Sodium Ion Diffusion in Layered Na_xMnO₂

^○Takayuki Shibata¹, Wataru Kobayashi^1,2, Yutaka Moritomo^1,2 (Univ. of Tsukuba¹, TIMS²)

1:30 PM - 1:45 PM

[20p-E8-3] Sputter all-solid electrolyte lithium-ion battery

^○Kadzuma Okamoto¹, Fumiya Kurokawa¹, Hirotaka Hida¹, Isaku Kanno¹, Minoru Mizuhata¹ (Kobe Univ.¹)

1:45 PM - 2:00 PM

[20p-E8-4] Modulation of superconducting transition temperature of LiTi₂O₄ thin films by ionic liquid gating

^○Shingo Maruyama^1,2, Shin Jongmoon¹, Zhang Xiaohang¹, Kui Jin¹, Suchoski Richard¹, Shintaro Yasui^1,3, Yuji Matsumoto², Greene Richard¹, Ichiro Takeuchi¹ (Univ. of Maryland¹, Tohoku Univ.², Tokyo Tech³)

2:00 PM - 2:15 PM

[20p-E8-5] First-Principles Simulations of Oxygen Ionic Conduction in Rare-Earth-Based Fast Ion Conductors

^○Mamoru Sakaue¹, Hideaki Kasai¹, Tatsumi Ishihara², Takahiro Mohri³ (Osaka Univ.¹, Kyushu Univ.², Konica Minolta³)

2:15 PM - 2:30 PM

[20p-E8-6] Fabrication of all-solution processed oxide TFTs with channel stopper structure

^○Yuuki Yoshimoto¹, Tue Phan Trong^2,3, Tomoko Hori², Satoshi Inoue^2,3, Tatsuya Shimoda^1,2,3 (JAIST¹, GDRC², JST-ERATO³)

2:30 PM - 2:45 PM

[20p-E8-7] A Nonvolatile Programmable Switch for FPGA utilizing CAAC-OS FET

^○Takashi Nakagawa¹, Yuki Okamoto¹, Takeshi Aoki¹, Masataka Ikeda¹, Munehiro Kozuma¹, Takeshi Osada¹, Yoshiyuki Kurokawa¹, Takayuki Ikeda¹, Naoto Yamade¹, Yutaka Okazaki¹, Hidekazu Miyairi¹, jun koyama¹, Shunpei Yamazaki¹ (SEL¹)

2:45 PM - 3:00 PM

[20p-E8-8] Hysteretic DC-DC Converter Operable at high temperature of 150℃ by use of CAAC-OS FETs

^○Masami Endo¹, Kei Takahashi¹, Takeshi Osada¹, Takashi Nakagawa¹, Yuki Okamoto¹, Takuro Ohmaru¹, Kazunori Watanabe¹, Takehisa Sato¹, Naoto Yamade¹, Yasutaka Suzuki¹, Takayuki Ikeda¹, Jun Koyama¹, Shunpei Yamazaki¹ (SEL¹)

Sessions

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

[17p-PG2-1~23] 6.3 Oxide-based electronics

[18a-E8-1~10] 6.3 Oxide-based electronics

△ [18a-E8-2] Photovoltaic property of CdSe quantum dot sensitized solar cells including TiO2 nanotube electrode fabricated by liquid phase deposition method

△ [18a-E8-3] Fabrication and Characterization of Nb and N co-doped Anatase TiO2

△ [18a-E8-4] Investigation of Etching Damage of TiO2 Thin Films Observed in XAS spectra

△ [18a-E8-5] Fabrication of high-mobility two dimensional electron system of delta doped SrTiO3 exhibiting strong quantum oscillations

△ [18a-E8-6] An improvement in growth of VO2 crystal and transition characteristic by TiN conductive buffer layer

△ [18a-E8-8] Inhomogeneous electronic domain structure induced by local stress during phase transition in epitaxial VO2 thin films

△ [18a-E8-9] Band diagram on p-n junction of Mott-insulator LaMnO3 and band-insulator Nb:SrTiO3 determined by X-ray photoemission spectroscopy

△ [18a-E8-10] Two dimensional superconductivity at BaPbO3/BaBiO3 interface

[18p-E8-1~21] 6.3 Oxide-based electronics

△ [18p-E8-2] Magnetoelectric properties of oleic acid coated Co0.5Fe2.5O4 nanocrystal self-assembled film

△ [18p-E8-3] Magnetotransport of oleic acid coated Fe3O4 nanocrystal self-assembled film

△ [18p-E8-4] Metal-insulator transition due to charge disproportionation at a high temperature in a SrFeO2.80 epitaxial thin film

△ [18p-E8-5] Oxygen-ion diffusion in a LaAlO3/CaFeO2.5/SrTiO3 heterostructure during reduction and oxidization

△ [18p-E8-6] Magnetic and electric conducting properties of cluster-glass Mg1.0Fe1.5Ti0.5O4 thin film

△ [18p-E8-11] Thin film growth and magnetic properties of La2MnFeO6 double-perovskites

△ [18p-E8-12] STM study of Nd0.6Sr0.4MnO3 thin films: Dependence of oxygen partial pressures during growth

△ [18p-E8-13] Electrical transport properties of Nb-based perovskite oxynitride epitaxial thin films

△ [18p-E8-14] Fabrication and Transport Properties of Pyrochlore Iridate Heterostructure

△ [18p-E8-15] Reststrahlen reflection property of rare-earth garnet in terahertz regime

△ [18p-E8-17] Phase control of a perovskite oxide by octahedral tilt propagation

▲ [18p-E8-21] Investigation of effective carrier characteristics in strongly correlated (La,Pr,Ca)MnO3 films by the THz Time Domain Spectroscopy

[19a-E8-1~9] 6.3 Oxide-based electronics

[19p-E8-1~21] 6.3 Oxide-based electronics

△ [19p-E8-1] Important Aspects of Resistive Transition of SiO2 Film Fabricated by Sputter Deposition

△ [19p-E8-3] Resistive nonvolatile memory with SiCxOy having oxidation-reduction reaction

△ [19p-E8-4] Observation of the interfacial state of hydrogen ions migration-type ReRAM by using synchrotron radiation

△ [19p-E8-5] Observation of conductive filaments in amorphous InGaZnO-based resistive switching memory

▼ [19p-E8-6] Analysis of Degradation Mechanism on Bottom Gate Amorphous InGaZnO Thin-Film Transistors with Siloxane Passivation Layer

△ [19p-E8-7] Electrical properties of IGZO-TFT with Al2O3 gate insulators by PE-ALD method

△ [19p-E8-8] Conduction mechanism of NiO-based resistive switching cells and new insight into the difference in resistance states

[20a-E8-1~8] 6.3 Oxide-based electronics

[20p-E8-1~8] 6.3 Oxide-based electronics

△ [18a-E8-2] Photovoltaic property of CdSe quantum dot sensitized solar cells including TiO₂ nanotube electrode fabricated by liquid phase deposition method

△ [18a-E8-3] Fabrication and Characterization of Nb and N co-doped Anatase TiO₂

△ [18a-E8-4] Investigation of Etching Damage of TiO₂ Thin Films Observed in XAS spectra

△ [18a-E8-5] Fabrication of high-mobility two dimensional electron system of delta doped SrTiO₃ exhibiting strong quantum oscillations

△ [18a-E8-8] Inhomogeneous electronic domain structure induced by local stress during phase transition in epitaxial VO₂ thin films

△ [18a-E8-9] Band diagram on p-n junction of Mott-insulator LaMnO₃ and band-insulator Nb:SrTiO₃ determined by X-ray photoemission spectroscopy

△ [18a-E8-10] Two dimensional superconductivity at BaPbO₃/BaBiO₃ interface

△ [18p-E8-2] Magnetoelectric properties of oleic acid coated Co_0.5Fe_2.5O₄ nanocrystal self-assembled film

△ [18p-E8-3] Magnetotransport of oleic acid coated Fe₃O₄ nanocrystal self-assembled film

△ [18p-E8-4] Metal-insulator transition due to charge disproportionation at a high temperature in a SrFeO_2.80 epitaxial thin film

△ [18p-E8-6] Magnetic and electric conducting properties of cluster-glass Mg_1.0Fe_1.5Ti_0.5O4 thin film

△ [18p-E8-11] Thin film growth and magnetic properties of La₂MnFeO₆ double-perovskites

△ [18p-E8-12] STM study of Nd_0.6Sr_0.4MnO₃ thin films: Dependence of oxygen partial pressures during growth

▲ [18p-E8-21] Investigation of effective carrier characteristics in strongly correlated (La,Pr,Ca)MnO₃ films by the THz Time Domain Spectroscopy

△ [19p-E8-3] Resistive nonvolatile memory with SiC_xO_y having oxidation-reduction reaction

△ [19p-E8-7] Electrical properties of IGZO-TFT with Al₂O₃ gate insulators by PE-ALD method