Poster presentation

[19p-PG4-1~5] 13.5 Si-English Session

Wed. Mar 19, 2014 4:00 PM - 6:00 PM PG4 (G棟2階)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

▲ [19p-PG4-1] Tunneling transport spectroscopy of interacting donors in silicon nano-transistors

^○（P）Daniel Moraru¹, Arup Samanta¹, Yuuki Takasu¹, Takahiro Tsutaya¹, Le The Anh², Takeshi Mizuno¹, Hiroshi Mizuta^2,3, Michiharu Tabe¹ (Shizuoka University¹, JAIST², Univ. Southampton³)

4:00 PM - 6:00 PM

▲ [19p-PG4-2] Conduction Band Tail States at GeO₂/Ge Interface Probed by Internal Photoemission Spectroscopy

^○Wenfeng Zhang^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (Tokyo Univ.¹, JST-CREST²)

4:00 PM - 6:00 PM

▲ [19p-PG4-3] Surface Cleaning of (100) n-Ge by H₂O₂ Aqueous Solution

^○Wenfeng Zhang^1,2, Cimang Lu^1,2, ChoongHyun Lee^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (Tokyo Univ.¹, JST-CREST²)

4:00 PM - 6:00 PM

▲ [19p-PG4-4] Type-II Staggered Hetero-Junction Tunnel FETs with Ge sources and Biaxial Tensile Strain Si Channels

^○（D）Minsoo Kim^1,2, Yuki Wakabayashi¹, Ryosho Nakane¹, Masafumi Yokoyama¹, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (The Univ. of Tokyo¹, JST-CREST²)

4:00 PM - 6:00 PM

▲ [19p-PG4-5] Effect of electric field on single-electron tunneling transport in dopant-atom transistors

^○（P）Arup Samanta¹, Daniel Moraru¹, Takeshi Mizuno¹, Michiharu Tabe¹ (Shizuoka University¹)

Oral presentation

[20a-F10-1~13] 13.5 Si-English Session

Thu. Mar 20, 2014 9:00 AM - 12:30 PM F10 (F406)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▲ [20a-F10-1] Variation Behaviors of Tunnel-FETs and MOSFETs Compared on an SOI

^○Shinji Migita¹, Takahiro Mori¹, Takashi Matsukawa¹, Koichi Fukuda¹, Yukinori Morita¹, Wataru Mizubayashi¹, Akito Tanabe¹, Kazuhiko Endo¹, Yongxun Liu¹, Shinichi O'uchi¹, Meishoku Masahara¹, Hiroyuki Ota¹ (AIST GNC¹)

9:15 AM - 9:30 AM

▲ [20a-F10-2] Interband Tunneling in Si Lateral Nano-pn Junctions

^○（D）purwiyanti sri^1,2, Tan HoangNhat¹, Gde Sapteka², Daniel Moraru¹, Takeshi Mizuno¹, Michiharu Tabe¹ (Research Inst. of Elec., Shizuoka Univ.¹, Dep. of Elec., UI²)

9:30 AM - 9:45 AM

▲ [20a-F10-3] Improvement of High-N_s Electron Mobility in Ge n-MOSFETs with Atomically Flat GeO₂/Ge interface

^○Choong Hyun Lee^1,2, Tomonori Nishimura^1,2, Cimang Lu^1,2, Wenfeng Zhang^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (Univ. of Tokyo¹, JST-CREST²)

9:45 AM - 10:00 AM

▼ [20a-F10-4] Significant effects of semiconductor substrate on interfacial SiO₂ scavenging in HfO₂ gate stacks through ultra-high vacuum annealing

^○Xiuyan Li¹, Takeaki Yajima¹, Tomonori Nishimura¹, Kosuke Nagashio¹, Akira Toriumi¹ (Univ. of Tokyo¹)

10:00 AM - 10:15 AM

▼ [20a-F10-5] Electrical activation and crystallinity recovery of P-implanted Ge

^○Toshimitsu Nakamura^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (Univ. of Tokyo¹, JST-CREST²)

10:15 AM - 10:30 AM

▼ [20a-F10-6] Electron Mobility and Leakage Current in Double-gated Ge Junctionless n-MOSFETs

^○Shoichi Kabuyanagi^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (Univ. of Tokyo¹, JST-CREST²)

10:30 AM - 10:45 AM

▲ [20a-F10-7] Multiple Origins of Direct-gap Modulation in Ultra-thin Highly-doped GeOI

^○Shoichi Kabuyanagi^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (Univ. of Tokyo¹, JST-CREST²)

Break 10:45〜11:00 （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

▼ [20a-F10-8] Reinvestigation of the role of Ar in structural phase transformation of sputtered HfO₂

^○Takamasa Iwai¹, Takeaki Yajima¹, Tomonori Nishimura¹, Kousuke Nagashio¹, Akira Toriumi¹ (Univ. of Tokyo¹)

11:15 AM - 11:30 AM

▼ [20a-F10-9] Self-accelerating oxidation at oxide/Si(111) interfaces studied by real-time photoelectron spectroscopy

^○（D）Jiayi Tang¹, Kiwamu Nishimoto¹, Shuichi Ogawa¹, Akitaka Yoshigoe², Shinnji Ishidzuka³, Daiki Watanabe¹, Yuden Teraoka², Yuji Takakuwa¹ (Tohoku Univ.¹, JAEA², Nagaoka Univ. Tech.³)

11:30 AM - 11:45 AM

▼ [20a-F10-10] Network modification of GeO₂ by trivalent metal oxide doping

^○Cimang Lu^1,2, Choong Hyun Lee^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (Univ. of Tokyo¹, JST-CREST²)

11:45 AM - 12:00 PM

▲ [20a-F10-11] Thermodynamic selection of the desirable doping materials in GeO₂

^○Cimang Lu^1,2, Choong Hyun Lee^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (Univ. of Tokyo¹, JST-CREST²)

12:00 PM - 12:15 PM

▲ [20a-F10-12] Record-high Electron Mobility in Sub-nm EOT Ge n-MOSFETs with Y-doped GeO₂ Interfacial Layer

^○Choong Hyun Lee^1,2, Cimang Lu^1,2, Wenfeng Zhang^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (Univ. of Tokyo¹, JST-CREST²)

12:15 PM - 12:30 PM

[20a-F10-13] Mobility Enhancement in TiO₂-Channel TFTs by Decreasing In-Gap States in The Film and Mitigating Grain Boundary Adsorption

^○Takeaki Yajima¹, Go Oike¹, Tomonori Nishimura¹, Kosuke Nagashio¹, Akira Toriumi¹ (Univ. of Tokyo¹)

Sessions

13. Semiconductors A (Silicon) » 13.5 Si-English Session

[19p-PG4-1~5] 13.5 Si-English Session

▲ [19p-PG4-1] Tunneling transport spectroscopy of interacting donors in silicon nano-transistors

▲ [19p-PG4-2] Conduction Band Tail States at GeO₂/Ge Interface Probed by Internal Photoemission Spectroscopy

▲ [19p-PG4-3] Surface Cleaning of (100) n-Ge by H₂O₂ Aqueous Solution

▲ [19p-PG4-4] Type-II Staggered Hetero-Junction Tunnel FETs with Ge sources and Biaxial Tensile Strain Si Channels

▲ [19p-PG4-5] Effect of electric field on single-electron tunneling transport in dopant-atom transistors

[20a-F10-1~13] 13.5 Si-English Session

▲ [20a-F10-1] Variation Behaviors of Tunnel-FETs and MOSFETs Compared on an SOI

▲ [20a-F10-2] Interband Tunneling in Si Lateral Nano-pn Junctions

▲ [20a-F10-3] Improvement of High-N_s Electron Mobility in Ge n-MOSFETs with Atomically Flat GeO₂/Ge interface

▼ [20a-F10-4] Significant effects of semiconductor substrate on interfacial SiO₂ scavenging in HfO₂ gate stacks through ultra-high vacuum annealing

▼ [20a-F10-5] Electrical activation and crystallinity recovery of P-implanted Ge

▼ [20a-F10-6] Electron Mobility and Leakage Current in Double-gated Ge Junctionless n-MOSFETs

▲ [20a-F10-7] Multiple Origins of Direct-gap Modulation in Ultra-thin Highly-doped GeOI

▼ [20a-F10-8] Reinvestigation of the role of Ar in structural phase transformation of sputtered HfO₂

▼ [20a-F10-9] Self-accelerating oxidation at oxide/Si(111) interfaces studied by real-time photoelectron spectroscopy

▼ [20a-F10-10] Network modification of GeO₂ by trivalent metal oxide doping

▲ [20a-F10-11] Thermodynamic selection of the desirable doping materials in GeO₂

▲ [20a-F10-12] Record-high Electron Mobility in Sub-nm EOT Ge n-MOSFETs with Y-doped GeO₂ Interfacial Layer

[20a-F10-13] Mobility Enhancement in TiO₂-Channel TFTs by Decreasing In-Gap States in The Film and Mitigating Grain Boundary Adsorption

Sessions

13. Semiconductors A (Silicon) » 13.5 Si-English Session

[19p-PG4-1~5] 13.5 Si-English Session

▲ [19p-PG4-1] Tunneling transport spectroscopy of interacting donors in silicon nano-transistors

▲ [19p-PG4-2] Conduction Band Tail States at GeO2/Ge Interface Probed by Internal Photoemission Spectroscopy

▲ [19p-PG4-3] Surface Cleaning of (100) n-Ge by H2O2 Aqueous Solution

▲ [19p-PG4-4] Type-II Staggered Hetero-Junction Tunnel FETs with Ge sources and Biaxial Tensile Strain Si Channels

▲ [19p-PG4-5] Effect of electric field on single-electron tunneling transport in dopant-atom transistors

[20a-F10-1~13] 13.5 Si-English Session

▲ [20a-F10-1] Variation Behaviors of Tunnel-FETs and MOSFETs Compared on an SOI

▲ [20a-F10-2] Interband Tunneling in Si Lateral Nano-pn Junctions

▲ [20a-F10-3] Improvement of High-Ns Electron Mobility in Ge n-MOSFETs with Atomically Flat GeO2/Ge interface

▼ [20a-F10-4] Significant effects of semiconductor substrate on interfacial SiO2 scavenging in HfO2 gate stacks through ultra-high vacuum annealing

▼ [20a-F10-5] Electrical activation and crystallinity recovery of P-implanted Ge

▼ [20a-F10-6] Electron Mobility and Leakage Current in Double-gated Ge Junctionless n-MOSFETs

▲ [20a-F10-7] Multiple Origins of Direct-gap Modulation in Ultra-thin Highly-doped GeOI

▼ [20a-F10-8] Reinvestigation of the role of Ar in structural phase transformation of sputtered HfO2

▼ [20a-F10-9] Self-accelerating oxidation at oxide/Si(111) interfaces studied by real-time photoelectron spectroscopy

▼ [20a-F10-10] Network modification of GeO2 by trivalent metal oxide doping

▲ [20a-F10-11] Thermodynamic selection of the desirable doping materials in GeO2

▲ [20a-F10-12] Record-high Electron Mobility in Sub-nm EOT Ge n-MOSFETs with Y-doped GeO2 Interfacial Layer

[20a-F10-13] Mobility Enhancement in TiO2-Channel TFTs by Decreasing In-Gap States in The Film and Mitigating Grain Boundary Adsorption

▲ [19p-PG4-2] Conduction Band Tail States at GeO₂/Ge Interface Probed by Internal Photoemission Spectroscopy

▲ [19p-PG4-3] Surface Cleaning of (100) n-Ge by H₂O₂ Aqueous Solution

▲ [20a-F10-3] Improvement of High-N_s Electron Mobility in Ge n-MOSFETs with Atomically Flat GeO₂/Ge interface

▼ [20a-F10-4] Significant effects of semiconductor substrate on interfacial SiO₂ scavenging in HfO₂ gate stacks through ultra-high vacuum annealing

▼ [20a-F10-8] Reinvestigation of the role of Ar in structural phase transformation of sputtered HfO₂

▼ [20a-F10-10] Network modification of GeO₂ by trivalent metal oxide doping

▲ [20a-F10-11] Thermodynamic selection of the desirable doping materials in GeO₂

▲ [20a-F10-12] Record-high Electron Mobility in Sub-nm EOT Ge n-MOSFETs with Y-doped GeO₂ Interfacial Layer

[20a-F10-13] Mobility Enhancement in TiO₂-Channel TFTs by Decreasing In-Gap States in The Film and Mitigating Grain Boundary Adsorption